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Thermoelectric power factor enhancement of AZO/In-AZO quantum well multilayer structures as compared to bulk filmsTEEHAN, Sean; EFSTATHIADIS, Harry; HALDAR, Pradeep et al.Journal of alloys and compounds. 2012, Vol 539, pp 129-136, issn 0925-8388, 8 p.Article

Curvature-tuned InAs-based shells containing two-dimensional electron gasMUTILIN, S. V; VOROBYOVA, Ju S; VOROB'EV, A. B et al.Journal of physics. D, Applied physics (Print). 2011, Vol 44, Num 36, issn 0022-3727, 365104.1-365104.6Article

Relaxation of the impurity photoconductivity in p-Ge/Ge1―xSix quantum well heterostructuresMOROZOV, S. V; GAVRILENKO, L. V; EROFEEVA, I. V et al.Semiconductor science and technology. 2011, Vol 26, Num 8, issn 0268-1242, 085009.1-085009.6Article

Scanning tunneling microscopic images and scanning tunneling spectra for coupled rectangular quantum corralsMITSUOKA, Shigenori; TAMURA, Akira.Journal of physics. Condensed matter (Print). 2011, Vol 23, Num 27, issn 0953-8984, 275302.1-275302.11Article

Spin magnetotransport in a two-dimensional electron system confined in a quantum wellCANGAS, Roberto; HIDALGO, Miguel Angel.Semiconductor science and technology. 2011, Vol 26, Num 10, issn 0268-1242, 105016.1-105016.7Article

Crossover from negative to positive magnetoresistance in the double quantum well system with different starting disorderKANNAN, E. S; KARAMAD, M; KIM, Gil-Ho et al.Journal of physics. Condensed matter (Print). 2010, Vol 22, Num 4, issn 0953-8984, 045802.1-045802.5Article

Current in Hubbard rings manipulated via magnetic fluxMIERZEJEWSKI, M; LUCZKA, J; DAJKA, J et al.Journal of physics. Condensed matter (Print). 2010, Vol 22, Num 24, issn 0953-8984, 245301.1-245301.8Article

Thermally induced spin polarization and thermal conductivities in a spin-orbit-coupled two-dimensional electron gasWANG, C. M; PANG, M. Q.Solid state communications. 2010, Vol 150, Num 33-34, pp 1509-1513, issn 0038-1098, 5 p.Article

Carrier density dependence of spin-orbit interaction in InAsSb quantum wellsNISHIZAKO, N; MANAGO, T; ISHIDA, S et al.Physica. E, low-dimentional systems and nanostructures. 2010, Vol 42, Num 4, pp 975-978, issn 1386-9477, 4 p.Conference Paper

Electronic transport in n-and p-type modulation doped Ga_xIn_1-xN_yAs_{1- y}/ GaAs quantum wells : The physics of III-V nitridesSUN, Y; BALKAN, N; ASLAN, M et al.Journal of physics. Condensed matter (Print). 2009, Vol 21, Num 17, issn 0953-8984, 174210.1-174210.8Article

The quantized acoustoelectric current for different lengths of a quasi-one-dimensional channelCHEN, S. W; GUO, H. Z; ZHANG, W et al.Solid state communications. 2009, Vol 149, Num 43-44, pp 1909-1913, issn 0038-1098, 5 p.Article

Voltage-tunable group delay of an electron wave packet through a single quantum potential wellYAN WANG; XI CHEN; YUE BAN et al.Physica. E, low-dimentional systems and nanostructures. 2009, Vol 41, Num 3, pp 399-402, issn 1386-9477, 4 p.Article

Magnetospectroscopy of symmetric and anti-symmetric states in double quantum wellsMARCHEWKA, M; SHEREGII, E. M; STRUPINSKI, W et al.Physica. E, low-dimentional systems and nanostructures. 2008, Vol 40, Num 4, pp 894-906, issn 1386-9477, 13 p.Article

Spin states and persistent currents in a quantum ring with an embedded magnetic impuritySHENG, J. S; KAI CHANG.Journal of physics. Condensed matter (Print). 2008, Vol 20, Num 2, issn 0953-8984, 025222.1-025222.10Article

Classical anisotropic magnetoresistance of a non-planar 2D electron gas in a parallel magnetic fieldGORAN, A. V; BYKOV, A. A; TOROPOV, A. I et al.Semiconductor science and technology. 2008, Vol 23, Num 10, issn 0268-1242, 105017.1-105017.5Article

Anisotropic transport of electrons and holes in thin GaAs/AlAs quantum wells grown on (311)A GaAs substratesNODA, Takeshi; SAKAKI, Hiroyuki.Physica. E, low-dimentional systems and nanostructures. 2008, Vol 40, Num 6, pp 2116-2118, issn 1386-9477, 3 p.Conference Paper

Dark currents of GaAs/AlGaAs quantum-well infrared photodetectorsLI, N; XIONG, D.-Y; YANG, X.-F et al.Applied physics. A, Materials science & processing (Print). 2007, Vol 89, Num 3, pp 701-705, issn 0947-8396, 5 p.Article

Sub-terahertz photoconduction induced by interlayer transition in an InAs/GaSb-based type II and broken-gap quantum well systemWEI, X. F; XU, W; ZENG, Z et al.Journal of physics. Condensed matter (Print). 2007, Vol 19, Num 2, issn 0953-8984, 026216.1-026216.9Article

Hole tunnelling properties in resonant tunnelling diodes with Si/strained Si_0.8Ge_0.2 heterostructures grown on Si(100) by low-temperature ultraclean LPCVDITO, Ryota; SAKURABA, Masao; MUROTA, Junichi et al.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, S38-S41Conference Paper

Electron transport properties through double-barrier structures sandwiching a wide band-gap layerZHENHONG DAI; JUN NI.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 31, Num 2, pp 174-179, issn 1386-9477, 6 p.Article

Exchange interaction in magnetic HgMnTe quantum well structureJIAN LIU; BUHMANN, Hartmut; NOVIK, Elena G et al.Physica status solidi. B. Basic research. 2006, Vol 243, Num 4, pp 835-838, issn 0370-1972, 4 p.Conference Paper

Electron soliton in semiconductor nanostructuresBEDNAREK, S; SZAFRAN, B; LIS, K et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 7, pp 075319.1-075319.5, issn 1098-0121Article

Quantum corrections to the conductivity and hall coefficient of a two-dimensional electron gas in a dirty AlxGa1-xAs/GaAs/AlxGa1-xAs quantum well : From the diffusive to the ballistic regimeRENARD, V. T; GORNYI, I. V; TKACHENKO, O. A et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 7, pp 075313.1-075313.10, issn 1098-0121Article

Spin-Hall transport of heavy holes in III-V semiconductor quantum wellsSCHLIEMANN, John; LOSS, Daniel.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 8, pp 085308.1-085308.6, issn 1098-0121Article