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Near band-edge luminescence of semi-insulating undoped gallium arsenide at high levels of excitationKOVALENKO, V. F; SHUTOV, S. V; BAGANOV, Ye. A et al.Journal of luminescence. 2009, Vol 129, Num 9, pp 1029-1031, issn 0022-2313, 3 p.Article

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Investigation of Tb-related green emission in group-III nitrides by time-resolved photoluminescence measurementWAKAHARA, A; TAKEMOTO, K; OIKAWA, F et al.Physica status solidi. A, Applications and materials science (Print). 2008, Vol 205, Num 1, pp 56-59, issn 1862-6300, 4 p.Conference Paper

Microscopic study of the H₂O vapor treatment of the silicon grain boundariesHONDA, S; MATES, T; REZEK, B et al.Journal of non-crystalline solids. 2008, Vol 354, Num 19-25, pp 2310-2313, issn 0022-3093, 4 p.Conference Paper

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Photoluminescence and field emission properties of ZnS:Mn nanoparticles synthesized by rf-magnetron sputtering techniqueGHOSH, P. K; AHMED, Sk. F; JANA, S et al.Optical materials (Amsterdam). 2007, Vol 29, Num 12, pp 1584-1590, issn 0925-3467, 7 p.Article

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Fast carrier dynamics in novel GaAs deep-centers for high-efficiency light-emitters for 1.3um-1.5um fiber opticsPAN, Janet L.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 64710D.1-64710D.3, issn 0277-786X, isbn 978-0-8194-6584-9, 1VolConference Paper

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Method for HVPE growth of thick crack-free GaN layersDAM, C. E. C; GRZEGORCZYK, A. P; HAGEMAN, P. R et al.Journal of crystal growth. 2006, Vol 290, Num 2, pp 473-478, issn 0022-0248, 6 p.Article

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