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Optical band gap of semiconductive type II Si clathrate purified by centrifugationHIMENO, Roto; OHASHI, Fumitaka; NONOMURA, Shuichi et al.Journal of non-crystalline solids. 2012, Vol 358, Num 17, pp 2138-2140, issn 0022-3093, 3 p.Conference Paper

Effect of environment and heat treatment on the optical properties of RF-sputtered SnO₂ thin filmsSAIPRIYA, S; SULTAN, M; SINGH, R et al.Physica. B, Condensed matter. 2011, Vol 406, Num 4, pp 812-817, issn 0921-4526, 6 p.Article

Optical properties of Ge-As-Te thin filmsALY, K. A; ABDELNAEIM, A. M; UOSIF, M. A. M et al.Physica. B, Condensed matter. 2011, Vol 406, Num 22, pp 4227-4232, issn 0921-4526, 6 p.Article

Structural and optical properties of low temperature synthesized Nanostructured BiFeO₃ thin filmsSHARMA, H. B; BOBBY SINGH, S; NG BOINIS SINGH et al.Physica. B, Condensed matter. 2011, Vol 406, Num 3, pp 351-353, issn 0921-4526, 3 p.Article

Structure and optical properties of amorphous GeS_x films prepared by PLDPAN, R. K; TAO, H. Z; ZANG, H. C et al.Journal of non-crystalline solids. 2011, Vol 357, Num 11-13, pp 2358-2361, issn 0022-3093, 4 p.Conference Paper

Surface enhanced Raman scattering in an amorphous matrix for Raman amplificationNARDOU, Eric; VOUAGNER, Dominique; JURDYC, Anne-Marie et al.Journal of non-crystalline solids. 2011, Vol 357, Num 8-9, pp 1895-1899, issn 0022-3093, 5 p.Conference Paper

An optical study of vacuum evaporated Seg_5-xTe₁₅Bi_x chalcogenide thin filmsAMBIKA; BARMAN, P. B.Physica. B, Condensed matter. 2010, Vol 405, Num 3, pp 822-827, issn 0921-4526, 6 p.Article

Incorporation of Bi, Cd and Zn on the optical properties of Ge₂₀Se₈₀ thin filmsALY, K. A; AFIFY, N; ABOUSHLY, A. M et al.Physica. B, Condensed matter. 2010, Vol 405, Num 7, pp 1846-1851, issn 0921-4526, 6 p.Article

Optical properties of pulsed laser deposited amorphous (GeSe₂)_100―x―Bi_x filmsPAN, R. K; TAO, H. Z; ZANG, H. C et al.Applied physics. A, Materials science & processing (Print). 2010, Vol 99, Num 4, pp 889-894, issn 0947-8396, 6 p.Article

A study of optical absorption in amorphous hydrogenated silicon thin films of varied thicknessMÜLLEROVA, J; PRUSAKOVA, L; NETRVALOVA, M et al.Applied surface science. 2010, Vol 256, Num 18, pp 5667-5671, issn 0169-4332, 5 p.Conference Paper

Electrical and optical properties of Sn₁₀Sb_20-xBixSe₇₀ (0≤ x ≤ 8) glassy filmsAHMAD, Muneer; KUMAR, J; THANGARAJ, R et al.Journal of non-crystalline solids. 2009, Vol 355, Num 48-49, pp 2345-2348, issn 0022-3093, 4 p.Article

Electrical conductivity and optical absorption of (Ge₂S₃)₁(Sb₂Te₃)₁ amorphous thin filmsABD EL-WAHABB, E; FARID, A. M.Journal of alloys and compounds. 2009, Vol 472, Num 1-2, pp 352-357, issn 0925-8388, 6 p.Article

Luminescence of Er-doped silicon oxide―zirconia thin filmsROZO, Carlos; FONSECA, Luis F; JAQUE, Daniel et al.Journal of luminescence. 2009, Vol 129, Num 7, pp 696-703, issn 0022-2313, 8 p.Article

Nanocrystalline formation and optical properties of germanium thin films prepared by physical vapor depositionAKL, A. A; HOWARI, H.The Journal of physics and chemistry of solids. 2009, Vol 70, Num 10, pp 1337-1343, issn 0022-3697, 7 p.Article

Phase stabilization by rapid thermal annealing in amorphous hydrogenated silicon nitride filmPREET SINGH, Sarab; SRIVASTAVA, P; GHOSH, S et al.Journal of physics. Condensed matter (Print). 2009, Vol 21, Num 9, issn 0953-8984, 0985010.1-095010.6Article

Photoluminescence and thermoluminescence of ZnO nano-needle arrays and filmsSECU, C. E; SIMA, Mariana.Optical materials (Amsterdam). 2009, Vol 31, Num 6, pp 876-880, issn 0925-3467, 5 p.Article

Studies on the influence of lithium incorporation in the photoluminescence of Y₂O₃:Eu³⁺ thin filmsNISSAMUDEEN, K. M; SANKAR, S; BAHNA, A. H et al.The Journal of physics and chemistry of solids. 2009, Vol 70, Num 5, pp 821-826, issn 0022-3697, 6 p.Article

Energy transfer between semiconductor nanoparticles (ZnS or CdS) and Eu³⁺ ions in sol-gel derived ZrO₂ thin filmsEHRHART, G; CAPOEN, B; ROBBE, O et al.Optical materials (Amsterdam). 2008, Vol 30, Num 10, pp 1595-1602, issn 0925-3467, 8 p.Article

Kinetics of self-bleaching in some photodarkened Ge-As-S amorphous thin filmsKIND, M; TICHY, L.Journal of non-crystalline solids. 2008, Vol 354, Num 45-46, pp 4948-4951, issn 0022-3093, 4 p.Article

Preparation of dielectric mirrors from high-refractive index contrast amorphous chalcogenide filmsKOHOUTEK, T; ORAVA, J; WAGNER, T et al.The Journal of physics and chemistry of solids. 2008, Vol 69, Num 8, pp 2070-2074, issn 0022-3697, 5 p.Article

Self-organization of crystalline domains in originally amorphous perylene diimide filmsGRAAF, Harald; UNOLD, Thomas; MATTHEUS, Christine et al.Journal of physics. D, Applied physics (Print). 2008, Vol 41, Num 10, issn 0022-3727, 105112.1-105112.6Article

Structure, optical and electrical properties of Ge₃₀Sb₁₀Se₆₀ thin filmsALY, K. A; ABOUSEHLY, A. M; OSMAN, M. A et al.Physica. B, Condensed matter. 2008, Vol 403, Num 10-11, pp 1848-1853, issn 0921-4526, 6 p.Article