Pascal and Francis Bibliographic Databases

Help

Search results

Your search

cc.\*:("001B70H67D")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 657

  • Page / 27
Export

Selection :

  • and

Effect of an electric field on the nonlinear optical rectification of a quantum ringWENFANG XIE.Physica. B, Condensed matter. 2014, Vol 443, pp 60-62, issn 0921-4526, 3 p.Article

Electron localization in an asymmetric double quantum well nanostructure (II): Improvement via Fano-type interferenceHAMEDI, H. R.Physica. B, Condensed matter. 2014, Vol 450, pp 128-135, issn 0921-4526, 8 p.Article

Impact of exciton spin relaxation (ESR) on Kerr nonlinearity in a quantum well nanostructureSEYYED HOSSEIN ASADPOUR; RAHIMPOUR SOLEIMANI, H.Physica. B, Condensed matter. 2014, Vol 449, pp 77-84, issn 0921-4526, 8 p.Article

Exciton-related nonlinear optical absorption and refractive index change in GaAs―Ga1―xAlxAs double quantum wellsMIRANDA, Guillermo L; MORA-RAMOS, Miguel E; DUQUE, Carlos A et al.Physica. B, Condensed matter. 2013, Vol 409, pp 78-82, issn 0921-4526, 5 p.Article

Homogeneous broadening and k-vector conservation in direct bandgap transitions: Non-Lorentzian homogeneous line shapes for exponential decays under relaxation time approximationVILJANEN, Juha; LEHKONEN, Sami.The European physical journal. B, Condensed matter physics (Print). 2013, Vol 86, Num 5, issn 1434-6028, 221.1-221.9Article

Analysis of confinement potential fluctuation and band-gap renormalization effects on excitonic transition in GaAs/AlGaAs multiquantum wells grown on (1 0 0) and (3 1 1)A GaAs surfacesLOURENCO, S. A; TEODORO, M. D; GONZALEZ-BORRERO, P. P et al.Physica. B, Condensed matter. 2012, Vol 407, Num 12, pp 2131-2135, issn 0921-4526, 5 p.Article

Combined effects of intense laser basic solid state physics field and applied electric field on exciton states in GaAs quantum wells: Transition from the single to double quantum wellDUQUE, C. A; MORA-RAMOS, M. E; KASAPOGLU, E et al.Physica status solidi. B. Basic research. 2012, Vol 249, Num 1, pp 118-127, issn 0370-1972, 10 p.Article

Effects of applied electromagnetic fields on the linear and nonlinear optical properties in an inverse parabolic quantum wellUNGAN, F; YESILGUL, U; KASAPOGLU, E et al.Journal of luminescence. 2012, Vol 132, Num 7, pp 1627-1631, issn 0022-2313, 5 p.Article

Fermi-edge polaritons in Bragg multiple-quantum-well structuresAVERKIEV, N. S; GLAZOV, M. M; VORONOV, M. M et al.Solid state communications. 2012, Vol 152, Num 5, pp 395-398, issn 0038-1098, 4 p.Article

Investigation of optical properties of InGaN―InN―InGaN/GaN quantum-well in the green spectral regimeYI LI; BIN LIU; RONG ZHANG et al.Physica. E, low-dimentional systems and nanostructures. 2012, Vol 44, Num 4, pp 821-825, issn 1386-9477, 5 p.Article

Contactless electroreflectance, photoluminescence and time-resolved photoluminescence of GaInNAs quantum wells obtained by the MBE method with N-irradiationBARANOWSKI, M; KUDRAWIEC, R; SYPEREK, M et al.Semiconductor science and technology. 2011, Vol 26, Num 4, issn 0268-1242, 045012.1-045012.5Article

Effect of lateral vapor phase diffusion during the selective growth of InGaN/GaN MQW on semipolar and nonpo!ar GaN stripes : Growth of Group III NitridesTANIKAWA, Tomoyuki; HONDA, Yoshio; YAMAGUCHI, Masahito et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 5, pp 1175-1178, issn 1862-6300, 4 p.Article

Intensity-dependent nonlinear optical properties in a modulation-doped single quantum wellUNGAN, F.Journal of luminescence. 2011, Vol 131, Num 11, pp 2237-2243, issn 0022-2313, 7 p.Article

Intersubband absorption in strained AlGaN/GaN double quantum wellsHA, S. H; BAN, S. L; ZHU, J et al.Physica. B, Condensed matter. 2011, Vol 406, Num 19, pp 3640-3645, issn 0921-4526, 6 p.Article

Intersubband optical absorption coefficients and refractive index changes in modulation-doped asymmetric double quantum wellUNGAN, F; KASAPOGLU, E; SOKMEN, I et al.Solid state communications. 2011, Vol 151, Num 20, pp 1415-1419, issn 0038-1098, 5 p.Article

Circular photogalvanic effect in HgTe/CdHgTe quantum well structuresWITTMANN, B; DANILOV, S. N; DVORETSKY, S. A et al.Semiconductor science and technology. 2010, Vol 25, Num 9, issn 0268-1242, 095005.1-095005.7Article

Coherent measurements of high-order electronic correlations in quantum wellsTURNER, Daniel B; NELSON, Keith A.Nature (London). 2010, Vol 466, Num 7310, pp 1089-1092, issn 0028-0836, 4 p.Article

Laser field effect on the nonlinear optical properties of a square quantum well under the applied electric fieldKARABULUT, Ibrahim.Applied surface science. 2010, Vol 256, Num 24, pp 7570-7574, issn 0169-4332, 5 p.Article

Optically detected magnetic resonance in CdMnSe/ZnSe submonolayer quantum wellsTOLMACHEV, D. O; BABUNTS, R. A; ROMANOV, N. G et al.Physica status solidi. B. Basic research. 2010, Vol 247, Num 6, pp 1511-1513, issn 0370-1972, 3 p.Article

Anisotropic exciton and charged exciton dichroic photoluminescence in undoped ZnSe/BeTe type-II quantum wells in magnetic fieldsSHEN, R; KOJIMA, E; AKIMOTO, R et al.Physica. E, low-dimentional systems and nanostructures. 2010, Vol 42, Num 4, pp 1172-1175, issn 1386-9477, 4 p.Conference Paper

Coherent Dynamics of Localized Spins in an Inhomogeneous Magnetic FieldHOHAGE, P. E; NANNEN, J; HALM, S et al.Journal of superconductivity and novel magnetism. 2010, Vol 23, Num 1, pp 135-137, issn 1557-1939, 3 p.Conference Paper

Theoretical and experimental operating wavelength of GaAs/Al0.25Ga0.75As IR photodetectorsALMAGGOUSSI, A; ABOUNADI, A; AKABLI, H et al.EPJ. Applied physics (Print). 2009, Vol 45, Num 2, issn 1286-0042, 20301.p1-20301.p3Article

Thermal quenching of photoluminescence in ZnO/ZnMgO multiple quantum wells following oxygen implantation and rapid thermal annealingXIAOMING WEN; DAVIS, J. A; YANO, M et al.Journal of luminescence. 2009, Vol 129, Num 2, pp 153-157, issn 0022-2313, 5 p.Article

Formation of nonuniformity in ZnSe/ZnMgSSe quantum well structures during MOVPE on GaAs(0 01) misoriented by 10° to ( 111 )A planeKOZLOVSKY, V. I; MARTOVITSKY, V. P.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 5009-5012, issn 0921-4526, 4 p.Conference Paper

Improvement in the optical and structural properties of InGaN/GaN multiple quantum wells by indium predepositionPARK, J. S; MOON, Yong-Tae; KIM, Dong-Joon et al.Journal of physics. D, Applied physics (Print). 2008, Vol 41, Num 16, issn 0022-3727, 165103.1-165103.4Article

  • Page / 27