Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor depositionHE, X. G; ZHAO, D. G; WANG, H et al.Thin solid films. 2014, Vol 564, pp 135-139, issn 0040-6090, 5 p.Article

Cu₂ZnSn(S,Se)₄ solar cells based on chemical bath deposited precursorsCHAO GAO; SCHNABEL, Thomas; ABZIEHER, Tobias et al.Thin solid films. 2014, Vol 562, pp 621-624, issn 0040-6090, 4 p.Article

Deposition and current conduction of mixed hexagonal and cubic phases of AIN/p-Si films prepared by vacuum arc discharge: Effect of deposition temperatureABDALLAH, B; AL-KHAWAJA, S; ALKHAWWAM, A et al.Thin solid films. 2014, Vol 562, pp 152-158, issn 0040-6090, 7 p.Article

Effect of film growth rate and thickness on properties of Ge/GaAs(100) thin filmsMITIN, V. F; LAZAROV, V. K; LARI, L et al.Thin solid films. 2014, Vol 550, pp 715-722, issn 0040-6090, 8 p.Article

Electrical properties of Au/polyvinylidene fluoride/n-InP Schottky diode with polymer interlayerRAJAGOPAL REDDY, V.Thin solid films. 2014, Vol 556, pp 300-306, issn 0040-6090, 7 p.Article

First-principles molecular dynamics investigation of thermal and mechanical stability of the TiN(001)/AlN and ZrN(001)/ AlN heterostructuresIVASHCHENKO, V. I; VEPREK, S; TURCHI, P. E. A et al.Thin solid films. 2014, Vol 564, pp 284-293, issn 0040-6090, 10 p.Article

Phonon-limited electron mobility in III-nitride heterojunctionsRIZWANA BEGUM, K; SANKESHWAR, N. S.Diamond and related materials. 2014, Vol 49, pp 87-95, issn 0925-9635, 9 p.Article

ZnTe thin films grown by electrodeposition technique on Fluorine Tin Oxide substratesSKHOUNI, O; EL MANOUNI, A; MOLLAR, M et al.Thin solid films. 2014, Vol 564, pp 195-200, issn 0040-6090, 6 p.Article

Effects of the thickness of NiO hole transport layer on the performance of all-inorganic quantum dot light emitting diodeXIAO LI ZHANG; HAI TAO DAI; JUN LIANG ZHAO et al.Thin solid films. 2014, Vol 567, pp 72-76, issn 0040-6090, 5 p.Article

A study on multiple defect states in low-carbon doped GaN layers and its correlation with AlGaN/GaN high electron mobility transistor operationTANAKA, Takeshi; SHIOJIMA, Kenji; OTOKI, Yohei et al.Thin solid films. 2014, Vol 557, pp 207-211, issn 0040-6090, 5 p.Conference Paper

Capping InAs quantum dots with an InGaAsSb strain-reducing layer to improve optical properties and dot-size uniformityLIU, Wei-Sheng; CHANG, Ching-Min.Thin solid films. 2014, Vol 570, pp 490-495, issn 0040-6090, 6 p., bConference Paper

Effects of TiO₂-doped silicone encapsulation material on the light extraction efficiency of GaN-based blue light-emitting diodesWANG, Pin-Chao; LIN, Chun-Liang; SU, Yan-Kuin et al.Thin solid films. 2014, Vol 570, pp 273-276, issn 0040-6090, 4 p., bConference Paper

High-temperature isothermal capacitance transient spectroscopy study on SiN deposition damages for low-Mg-doped p-GaN Schottky diodesSHIOJIMA, Kenji; WAKAYAMA, Hisashi; AOKI, Toshichika et al.Thin solid films. 2014, Vol 557, pp 268-271, issn 0040-6090, 4 p.Conference Paper

Molecular beam epitaxy of SrTiO₃ on GaAs(001): GaAs surface treatment and structural characterization of the oxide layerLOUAHADJ, L; BACHELET, R; REGRENY, P et al.Thin solid films. 2014, Vol 563, pp 2-5, issn 0040-6090, 4 p.Conference Paper

Optical properties of CuCdTeO thin films sputtered from CdTe-CuO composite targetsMENDOZA-GALVAN, A; ARREOLA-JARDON, G; KARLSSON, L. H et al.Thin solid films. 2014, Vol 571, pp 706-711, issn 0040-6090, 6 p., 3Conference Paper

Simulation and fabrication of SiO₂/graded-index TiO₂ antireflection coating for triple-junction GaAs solar cells by using the hybrid deposition processLIU, Jheng-Jie; HO, Wen-Jeng; LEE, Yi-Yu et al.Thin solid films. 2014, Vol 570, pp 585-590, issn 0040-6090, 6 p., bConference Paper

Characteristics of radio frequency sputtered Cd_xZn_yTe_z thin film alloy and CdS/Cd_xZn_yTe_z junctionBANERJEE, Pushan; GHOSH, Biswajit.Thin solid films. 2013, Vol 531, pp 203-207, issn 0040-6090, 5 p.Article

Current―voltage―temperature characteristics of Au/p-InP Schottky barrier diodeKORUCU, Demet; DUMAN, Songül.Thin solid films. 2013, Vol 531, pp 436-441, issn 0040-6090, 6 p.Article

Design and construction of an improved nanometric ZnS/Ag/ZnS/Ag/ZnS transparent conductive electrode and investigating the effect of annealing on its characteristicsKERMANI, Hamideh; HAMID REZA FALLAH; HAJIMAHMOODZADEH, Morteza et al.Thin solid films. 2013, Vol 539, pp 222-225, issn 0040-6090, 4 p.Article

Dispersion and aggregation of quantum dots in polymer―inorganic hybrid filmsMATVIENKO, Oksana O; SAVIN, Yuri N; KRYZHANOVSKA, Aleksandra S et al.Thin solid films. 2013, Vol 537, pp 226-230, issn 0040-6090, 5 p.Article

Dynamical X-ray Diffraction from In_xGa_1―xAs Heterostructures with DislocationsRAGO, P. B; AYERS, J. E.Journal of electronic materials. 2013, Vol 42, Num 8, pp 2450-2458, issn 0361-5235, 9 p.Article

Effects of Ti alloying of AlCrN coatings on thermal stability and oxidation resistanceFORSEN, R; JOHANSSON, M. P; ODEN, M et al.Thin solid films. 2013, Vol 534, pp 394-402, issn 0040-6090, 9 p.Article

Enhanced photocurrent and persistent photoconductivity in nanoporous GaN formed by electrochemical etchingLEE, Yoon-Han; KANG, Jin-Ho; RYU, Sang-Wan et al.Thin solid films. 2013, Vol 540, pp 150-154, issn 0040-6090, 5 p.Article

Implantation Studies on Silicon-Doped GaNSIMON, Ronnie; VIANDEN, Reiner; KOHLER, Klaus et al.Journal of electronic materials. 2013, Vol 42, Num 1, pp 21-25, issn 0361-5235, 5 p.Article

Optimization of nitrogen plasma source parameters by measurements of emitted light intensity for growth of GaN by molecular beam epitaxyKLOSEK, K; SOBANSKA, M; TCHUTCHULASHVILI, G et al.Thin solid films. 2013, Vol 534, pp 107-110, issn 0040-6090, 4 p.Article