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Results 1 to 25 of 1969

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Effects of nitrogen precursor on the Au-assisted vapor―liquid―solid growth of GaAs(N) nanostructuresSUZUKI, Hidetoshi; SAKAI, Kentaro; HARAGUCHI, Tomohiro et al.Journal of crystal growth. 2014, Vol 386, pp 100-106, issn 0022-0248, 7 p.Article

Hydrothermal phase stability study of Li2B4O7GRAHAM, Jeffrey J; MANN, J. Matthew; ZENS, Timothy W. C et al.Journal of solid state chemistry (Print). 2014, Vol 216, pp 79-84, issn 0022-4596, 6 p.Article

Size Effect on the Short Range Order and the Crystallization of Nanosized Amorphous AluminaBLOCH, Leonid; KAUFFMANN, Yaron; POKROY, Boaz et al.Crystal growth & design. 2014, Vol 14, Num 8, pp 3983-3989, issn 1528-7483, 7 p.Article

Studies on structural and optical properties of ZnSe and ZnSSe single crystals grown by CVT methodKANNAPPAN, P; DHANASEKARAN, R.Journal of crystal growth. 2014, Vol 401, pp 691-696, issn 0022-0248, 6 p.Conference Paper

Flux Engineering for Indium Tin Oxide Nanotree Crystal Alignment and Height-Dependent Branch OrientationBEAUDRY, Allan L; LAFORGE, Joshua M; TUCKER, Ryan T et al.Crystal growth & design. 2013, Vol 13, Num 1, pp 212-219, issn 1528-7483, 8 p.Article

Influence of Factors on Growth of Off-Congruent LiNbO3 Single-Crystal by Li-Rich/Li-Poor Chemical Vapor Transport EquilibrationZHANG, De-Long; BEI CHEN; YU, Dao-Yin et al.Crystal growth & design. 2013, Vol 13, Num 4, pp 1793-1798, issn 1528-7483, 6 p.Article

Integration of solid-state nanopores in a 0.5 μm CMOS foundry processUDDIN, A; YEMENICIOGLU, S; CHEN, C.-H et al.Nanotechnology (Bristol. Print). 2013, Vol 24, Num 15, issn 0957-4484, 155501.1-155501.13Article

Mass spectrometric analysis of impurities in crystalline organic semiconductorsVOLOSHENKO, A; TAN, K. J; KLOC, C et al.Organic electronics (Print). 2013, Vol 14, Num 1, pp 378-388, issn 1566-1199, 11 p.Article

Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer depositionPERROS, Alexander Pyymaki; HAKOLA, Hanna; SAJAVAARA, Timo et al.Journal of physics. D, Applied physics (Print). 2013, Vol 46, Num 50, issn 0022-3727, 505502.1-505502.8Article

Melt growth, characterization and properties of bulk In2O3 single crystalsGALAZKA, Z; UECKER, R; IRMSCHER, K et al.Journal of crystal growth. 2013, Vol 362, pp 349-352, issn 0022-0248, 4 p.Conference Paper

Characterisation of vapour grown CdZnTe crystals using synchrotron X-ray topographyEGAN, Christopher K; CHOUBEY, Ashutosh; MOORE, Moreton et al.Journal of crystal growth. 2012, Vol 343, Num 1, pp 1-6, issn 0022-0248, 6 p.Article

Inverted SiC nanoneedles grown on carbon fibers by a two-crucible method without catalystBINGJIAN QIAN; HAIRONG LI; ZHI YANG et al.Journal of crystal growth. 2012, Vol 338, Num 1, pp 6-11, issn 0022-0248, 6 p.Article

Preparation and Transport Properties of Bi2O2Se Single CrystalsDRASAR, C; RULEOVA, P; BENES, L et al.Journal of electronic materials. 2012, Vol 41, Num 9, pp 2317-2321, issn 0361-5235, 5 p.Article

Rapid Crystallization of L-Alanine on Engineered Surfaces by Use of Metal-Assisted and Microwave-Accelerated Evaporative CrystallizationALABANZA, Anginelle M; POZHARSKI, Edwin; ASLAN, Kadir et al.Crystal growth & design. 2012, Vol 12, Num 1, pp 346-353, issn 1528-7483, 8 p.Article

Simulating vapour growth morphology of crystalline urea using modified attachment energy modelSINGH, M. K; BANERJEE, Arup; GUPTA, P. K et al.Journal of crystal growth. 2012, Vol 343, Num 1, pp 77-85, issn 0022-0248, 9 p.Article

Single-Crystal Growth of Bi-Sb-Te Thermoelectric Materials by Halide Chemical Vapor Transport TechniqueKOYANO, Mikio; TANAKA, Junya; SUEKUNI, Koichiro et al.Journal of electronic materials. 2012, Vol 41, Num 6, pp 1317-1321, issn 0361-5235, 5 p.Conference Paper

Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping filmDINGEMANS, G; VAN DE SANDEN, M. C. M; KESSELS, W. M. M et al.Physica status solidi. Rapid research letters (Print). 2011, Vol 5, Num 1, pp 22-24, issn 1862-6254, 3 p.Article

Growth of oriented polycrystalline α-HgI2 films by ultrasonic-wave-assisted physical vapor depositionWEIGUANG YANG; LEI NIE; DONGMEI LI et al.Journal of crystal growth. 2011, Vol 324, Num 1, pp 149-153, issn 0022-0248, 5 p.Article

Phase selection during calcium silicide formation for layered and powder growthCUILIAN WEN; KATO, Akihiko; NONOMURA, Tomomi et al.Journal of alloys and compounds. 2011, Vol 509, Num 13, pp 4583-4587, issn 0925-8388, 5 p.Article

Polyhedral to nearly spherical morphology transformation of silver microcrystals grown from vapor phaseLI, C. R; LU, N. P; MEI, J et al.Journal of crystal growth. 2011, Vol 314, Num 1, pp 324-330, issn 0022-0248, 7 p.Article

Self-limiting nature in atomic-layer epitaxy of rutile thin films from TiCl4 and H2O on sapphire (0 0 1) substratesKUMAGAI, H; MASUDA, Y; SHINAGAWA, T et al.Journal of crystal growth. 2011, Vol 314, Num 1, pp 146-150, issn 0022-0248, 5 p.Article

Synthesis, structure, and properties of a novel hydrated borate Rb4[B4O5(OH)4]2 · 3H2OYI ZHAO; SHILIE PAN; FENG LI et al.Solid state sciences. 2011, Vol 13, Num 1, pp 82-87, issn 1293-2558, 6 p.Article

Antimony doped whiskers of SnO2 grown from vapor phaseZAYTSEV, V. B; ZHUKOVA, A. A; RUMYANTSEVA, M. N et al.Journal of crystal growth. 2010, Vol 312, Num 3, pp 386-390, issn 0022-0248, 5 p.Article

High current fast switching n-ZnO/p-Si diodeCHOI, Young; LEE, Kimoon; PARK, C. H et al.Journal of physics. D, Applied physics (Print). 2010, Vol 43, Num 34, issn 0022-3727, 345101.1-345101.4Article

In situ observation of the reaction of tantalum with nitrogen in a laser heated diamond anvil cellFRIEDRICH, Alexandra; WINKLER, Björn; BAYARJARGAL, Lkhamsuren et al.Journal of alloys and compounds. 2010, Vol 502, Num 1, pp 5-12, issn 0925-8388, 8 p.Article

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