Defect structure of epitaxial Cr_xV_1-x thin films on MgO(001)KASPAR, Tiffany C; BOWDEN, Mark E; CHONGMIN WANG et al.Thin solid films. 2014, Vol 550, pp 1-9, issn 0040-6090, 9 p.Article

Efficient ultraviolet and near-infrared conversion amorphous YbF₃: Er filmYING ZHANG; WANG, Ru-Zhi; XIAO, Si-Guo et al.Journal of luminescence. 2014, Vol 145, pp 351-356, issn 0022-2313, 6 p.Article

Epitaxial Fe₃Si/Ge/Fe₃Si thin film multilayers grown on GaAs(001)JENICHEN, B; HERFORT, J; JAHN, U et al.Thin solid films. 2014, Vol 556, pp 120-124, issn 0040-6090, 5 p.Article

Epitaxial growth of non-polar m-plane AIN film on bare and ZnO buffered m-sapphireWANG, H. T; JIA, C. H; XU, J. K et al.Journal of crystal growth. 2014, Vol 391, pp 111-115, issn 0022-0248, 5 p.Article

Formation Mechanism of Superconducting Fe_1+xTe/Bi₂Te₃ Bilayer Synthesized via Interfacial Chemical ReactionsGAN WANG; QING LIN HE; HE, Hong-Tao et al.Crystal growth & design. 2014, Vol 14, Num 7, pp 3370-3374, issn 1528-7483, 5 p.Article

Growth of InGaN/GaN core-shell structures on selectively etched GaN rods by molecular beam epitaxyALBERT, S; BENGOECHEA-ENCABO, A; CALLEJA, E et al.Journal of crystal growth. 2014, Vol 392, pp 5-10, issn 0022-0248, 6 p.Article

Indium and bismuth interdiffusion and its influence on the mobility in In₂Se_3/Bi₂Se₃HANG DONG LEE; CAN XU; SHUBEITA, Samir M et al.Thin solid films. 2014, Vol 556, pp 322-324, issn 0040-6090, 3 p.Article

Influence of growth parameters on the optical properties of selective area grown GaN nanorods by plasma-assisted molecular beam epitaxyLEE, Sang-Tae; SARAVANA KUMAR, R; JEON, Seung-Ki et al.Journal of luminescence. 2014, Vol 151, pp 188-192, issn 0022-2313, 5 p.Article

Minority Carrier Lifetime in Beryllium-Doped InAs/InAsSb Strained Layer SuperlatticesLIN, Y; WANG, D; DONETSKY, D et al.Journal of electronic materials. 2014, Vol 43, Num 9, pp 3184-3190, issn 0361-5235, 7 p.Article

Redundant Sb condensation on GaSb epilayers grown by molecular beam epitaxy during cooling procedureARPAPAY, B; SAHIN, S; ARIKAN, B et al.Thin solid films. 2014, Vol 564, pp 110-114, issn 0040-6090, 5 p.Article

Shell to core carrier-transfer in MBE-grown GaAs/AlGaAs core-shell nanowires on Si(1 0 0) substratesBALGOS, Maria Herminia; JACULBIA, Rafael; DEFENSOR, Michael et al.Journal of luminescence. 2014, Vol 155, pp 27-31, issn 0022-2313, 5 p.Article

Strain state, film and surface morphology of epitaxial topological insulator Bi₂Se₃ films on Si(111)KLEIN, C; VYSHNEPOLSKY, M; KOMPCH, A et al.Thin solid films. 2014, Vol 564, pp 241-245, issn 0040-6090, 5 p.Article

Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si(111) and Sapphire Substrates by MBEMUKHOPADHYAY, Partha; BAG, Ankush; GOMES, Umesh et al.Journal of electronic materials. 2014, Vol 43, Num 4, pp 1263-1270, issn 0361-5235, 8 p.Article

GaSb quantum dots on GaAs with high localization energy of 710 meV and an emission wavelength of 1.3 μmRICHTER, Johannes; STRASSNER, Johannes; LOEBER, Thomas H et al.Journal of crystal growth. 2014, Vol 404, pp 48-53, issn 0022-0248, 6 p.Article

Homobuffer thickness effect on the conduction type of non-polar ZnO thin filmsPAN, X. H; DING, P; HUANG, J. Y et al.Journal of crystal growth. 2014, Vol 404, pp 80-83, issn 0022-0248, 4 p.Article

(211)-Oriented Domain Formation During Growth of ZnTe on m-Plane Sapphire by MBENAKASU, Taizo; KOBAYASHI, Masakazu; TOGO, Hiroyoshi et al.Journal of electronic materials. 2014, Vol 43, Num 4, pp 921-925, issn 0361-5235, 5 p.Conference Paper

Arrangement of GaN nanowires grown by plasma-assisted molecular beam epitaxy on silicon substrates with amorphous Al₂O₃ buffersSOBANSKA, M; WIERZBICKA, A; KLOSEK, K et al.Journal of crystal growth. 2014, Vol 401, pp 657-660, issn 0022-0248, 4 p.Conference Paper

Electronic processes in adatom dynamics at epitaxial semiconductor surfaces studied using MBE-STM combined systemKANISAWA, Kiyoshi.Journal of crystal growth. 2014, Vol 401, pp 381-387, issn 0022-0248, 7 p.Conference Paper

Higher Dislocation Density of Arsenic-Doped HgCdTe MaterialVILELA, M. F; OLSSON, K. R; RYBNICEK, K et al.Journal of electronic materials. 2014, Vol 43, Num 8, pp 3018-3024, issn 0361-5235, 7 p.Conference Paper

Measurements of strain in AlGaN/GaN HEMT structures grown by plasma assisted molecular beam epitaxyBORYSIUK, J; SOBCZAK, K; WIERZBICKA, A et al.Journal of crystal growth. 2014, Vol 401, pp 355-358, issn 0022-0248, 4 p.Conference Paper

Metastable nature of InN and In-rich InGaN alloysIVANOV, S. V; SHUBINA, T. V; KOMISSAROVA, T. A et al.Journal of crystal growth. 2014, Vol 403, pp 83-89, issn 0022-0248, 7 p.Conference Paper

Molecular beam epitaxial growth of GaSb/GaAs quantum dots on Ge substratesKUNRUGSA, Maetee; KIRAVITTAYA, Suwit; SOPITPAN, Suwat et al.Journal of crystal growth. 2014, Vol 401, pp 441-444, issn 0022-0248, 4 p.Conference Paper

Phosphor-Free InGaN/GaN Dot-in-a-Wire White Light-Emitting Diodes on Copper SubstratesHIEU PHAM TRUNG NGUYEN; QI WANG; ZETIAN MI et al.Journal of electronic materials. 2014, Vol 43, Num 4, pp 868-872, issn 0361-5235, 5 p.Conference Paper

Transmission Electron Microscopy-Based Analysis of Electrically Conductive Surface Defects in Large Area GaSb Homoepitaxial Diodes Grown Using Molecular Beam EpitaxyROMERO, O. S; ARAGON, A. A; RAHIMI, N et al.Journal of electronic materials. 2014, Vol 43, Num 4, pp 926-930, issn 0361-5235, 5 p.Conference Paper

Tunnel field-effect transistors with germanium/strained-silicon hetero-junctions for low power applicationsMINSOO KIM; YOUNGHYUN KIM; YOKOYAMA, Masafumi et al.Thin solid films. 2014, Vol 557, pp 298-301, issn 0040-6090, 4 p.Conference Paper