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Results 1 to 25 of 4902

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Evolution of the surface morphology of AlN epitaxial film by HVPEXIAOJING GONG; KE XU; JUN HUANG et al.Journal of crystal growth. 2015, Vol 409, pp 100-104, issn 0022-0248, 5 p.Article

Analysis of the VIS―NIR spectral reflectance of Bi/GaAs structures grown by MOVPE and UHVEHABCHI, M. M; MASSOUDI, I; REBEY, A et al.Journal of crystal growth. 2014, Vol 395, pp 26-30, issn 0022-0248, 5 p.Article

Antibacterial and barrier properties of oriented polymer films with ZnO thin films applied with atomic layer deposition at low temperaturesVÄHÄ-NISSI, Mika; PITKÄNEN, Marja; KARPPINEN, Maarit et al.Thin solid films. 2014, Vol 562, pp 331-337, issn 0040-6090, 7 p.Article

Atomic layer deposition of strontium titanate films from Sr(iPr3Cp)2, Ti[N(CH3)2]4 and H2ORENTROP, S; MOEBUS, T; ABENDROTH, B et al.Thin solid films. 2014, Vol 550, pp 53-58, issn 0040-6090, 6 p.Article

Barrier properties of plastic films coated with an Al2O3 layer by roll-to-toll atomic layer depositionHIRVIKORPI, Terhi; LAINE, Risto; HARLIN, Ali et al.Thin solid films. 2014, Vol 550, pp 164-169, issn 0040-6090, 6 p.Article

Deflection of threading dislocations in patterned 4H-SiC epitaxial growthTSUCHIDA, Hidekazu; TAKANASHI, Ryosuke; KAMATA, Isaho et al.Journal of crystal growth. 2014, Vol 402, pp 260-266, issn 0022-0248, 7 p.Article

Electrical characterization and DLTS analysis of a gold/n-type gallium nitride Schottky diodeELHAJI, A; EVANS-FREEMAN, J. H; EL-NAHASS, M. M et al.Materials science in semiconductor processing. 2014, Vol 17, pp 94-99, issn 1369-8001, 6 p.Article

Growth and characterisation of Ga(NAsBi) alloy by metal-organic vapour phase epitaxyBUSHELL, Z. L; LUDEWIG, P; KNAUB, N et al.Journal of crystal growth. 2014, Vol 396, pp 79-84, issn 0022-0248, 6 p.Article

High-quality MOVPE butt-joint integration of InP/AlGaInAs/InGaAsP-based all-active optical componentsKULKOVA, I. V; KADKHODAZADEH, S; KUZNETSOVA, N et al.Journal of crystal growth. 2014, Vol 402, pp 243-248, issn 0022-0248, 6 p.Article

Holmium titanium oxide thin films grown by atomic layer depositionKUKLI, Kaupo; KEMELL, Marianna; MUKESH CHANDRA DIMRI et al.Thin solid films. 2014, Vol 565, pp 261-266, issn 0040-6090, 6 p.Article

Hydride vapor phase epitaxy of high quality {1013} semipolar GaN on m-plane sapphire coated with self-assembled SiO2 nanospheresJIANKUN YANG; TONGBO WEI; ZIQIANG HUO et al.Journal of crystal growth. 2014, Vol 387, pp 101-105, issn 0022-0248, 5 p.Article

Ionized vapor deposition of antimicrobial Ti-Cu films with controlled copper releaseSTRANAK, Vitezslav; WULFF, Harm; HIPPLER, Rainer et al.Thin solid films. 2014, Vol 550, pp 389-394, issn 0040-6090, 6 p.Article

Large-scale and facial fabrication of PbS nanorods by sulfuration of a Pb sheetCHERAGHIZADE, Mohsen; YOUSEFI, Ramin; JAMALI-SHEINI, Farid et al.Materials science in semiconductor processing. 2014, Vol 21, pp 98-103, issn 1369-8001, 6 p.Article

Self-limiting growth when using trimethyl bismuth (TMBi) in the metal-organic vapor phase epitaxy (MOVPE) of GaAs1―yBiyFORGHANI, Kamran; YINGXIN GUAN; WOOD, Adam W et al.Journal of crystal growth. 2014, Vol 395, pp 38-45, issn 0022-0248, 8 p.Article

Thin film characterization of zinc tin oxide deposited by thermal atomic layer depositionMULLINGS, Marja N; HÄGGLUND, Carl; TANSKANEN, Jukka T et al.Thin solid films. 2014, Vol 556, pp 186-194, issn 0040-6090, 9 p.Article

X-ray scattering of calcite thin films deposited by atomic layer deposition: Studies in air and in calcite saturated water solutionPENG WANG; HUDAK, Michael R; LERNER, Allan et al.Thin solid films. 2014, Vol 565, pp 277-284, issn 0040-6090, 8 p.Article

Ammonothermal growth of GaN on a self-nucleated GaN seed crystalQUANXI BAO; SAITO, Makoto; HAZU, Kouji et al.Journal of crystal growth. 2014, Vol 404, pp 168-171, issn 0022-0248, 4 p.Article

Optical characterization of nanocrystalline boron nitride thin films grown by atomic layer depositionSNURE, Michael; QING PADUANO; HAMILTON, Merle et al.Thin solid films. 2014, Vol 571, pp 51-55, issn 0040-6090, 5 p., 1Article

Original Anisotropic Growth Mode of Copper Nanorods by Vapor Phase DepositionPRUNIER, H; RICOLLEAU, C; NELAYAH, J et al.Crystal growth & design. 2014, Vol 14, Num 12, pp 6350-6356, issn 1528-7483, 7 p.Article

Reduction of Dislocation Density in HVPE-Grown GaN Epilayers by Using In Situ-Etched Porous TemplatesZHAO, Z. D; WANG, B; SUI, Y. P et al.Journal of electronic materials. 2014, Vol 43, Num 3, pp 786-790, issn 0361-5235, 5 p.Article

Thermal shock behavior of platinum aluminide bond coat/electron beam-physical vapor deposited thermal barrier coatingsZHENHUA XU; JIANWEI DAI; JING NIU et al.Journal of alloys and compounds. 2014, Vol 617, pp 185-191, issn 0925-8388, 7 p.Article

Thermodynamic study of β-Ga2O3 growth by halide vapor phase epitaxyNOMURA, Kazushiro; GOTO, Ken; TOGASHI, Rie et al.Journal of crystal growth. 2014, Vol 405, pp 19-22, issn 0022-0248, 4 p.Article

Electrical and photovoltaic properties of ZnO/Si heterostructures with ZnO films grown by atomic layer depositionPIETRUSZKA, R; LUKA, G; WITKOWSKI, B. S et al.Thin solid films. 2014, Vol 563, pp 28-31, issn 0040-6090, 4 p.Conference Paper

Electrochemical fabrication of platinum interconnects for implantable electronic devicesRADISIC, A; MORCOS, B. M; DE BEECK, M. Op et al.Microelectronic engineering. 2014, Vol 120, pp 251-256, issn 0167-9317, 6 p.Conference Paper

Light-activated gas sensing of Bi2O3-core/ZnO-shell nanobelt gas sensorsSUNGHOON PARK; HYUNSUNG KO; SANGMIN LEE et al.Thin solid films. 2014, Vol 570, pp 298-302, issn 0040-6090, 5 p., bConference Paper

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