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Results 1 to 25 of 170844

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MSM Varactor Diodes Based on In0.7Ga0.3As HEMTs With Cut-Off Frequency of 908 GHzSEUNG HEON SHIN; GEUM, Dae-Myeong; JANG, Jae-Hyung et al.IEEE electron device letters. 2014, Vol 35, Num 2, pp 172-174, issn 0741-3106, 3 p.Article

Snapback breakdown ESD device based on zener diodes on silicon-on-insulator technology : RELIABILITY AND VARIABILITY OF DEVICES FOR CIRCUITS AND SYSTEMSTAM, Wing-Shan; KOK, Chi-Wah; SIU, Sik-Lam et al.Microelectronics and reliability. 2014, Vol 54, Num 6-7, pp 1163-1168, issn 0026-2714, 6 p.Article

High-Performance Current Saturating Graphene Field-Effect Transistor With Hexagonal Boron Nitride Dielectric on Flexible Polymeric SubstratesLEE, Jongho; HA, Tae-Jun; PARRISH, Kristen N et al.IEEE electron device letters. 2013, Vol 34, Num 2, pp 172-174, issn 0741-3106, 3 p.Article

Transparent organic thin-film transistors based on high quality polycrystalline rubrene film as active layersXIANRUI QIAN; TONG WANG; DONGHANG YAN et al.Organic electronics (Print). 2013, Vol 14, Num 4, pp 1052-1056, issn 1566-1199, 5 p.Article

Microscopic Identification of Hot Spots in Multibarrier Schottky Contacts on Pulsed Laser Deposition Grown Zinc Oxide Thin FilmsMULLER, Stefan; VON WENCKSTERN, Holger; BREITENSTEIN, Otwin et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 3, pp 536-541, issn 0018-9383, 6 p.Article

Low Electron Schottky Barrier Height of NiGe/Ge Achieved by Ion Implantation After Germanidation TechniqueZHIQIANG LI; XIA AN; MIN LI et al.IEEE electron device letters. 2012, Vol 33, Num 12, pp 1687-1689, issn 0741-3106, 3 p.Article

LDMOS-transistors on semi-insulating silicon-on-polycrystalline-silicon carbide substrates for improved RF and thermal propertiesLOTFI, S; LI, L.-G; VALLIN, O et al.Solid-state electronics. 2012, Vol 70, pp 14-19, issn 0038-1101, 6 p.Conference Paper

Design, fabrication and characterization of In0.23Ga0.77As-channel planar Gunn diodes for millimeter wave applicationsCHONG LI; KHALID, Ata; PALUCHOWSKI CALDWELL, Sonia H et al.Solid-state electronics. 2011, Vol 64, Num 1, pp 67-72, issn 0038-1101, 6 p.Article

Highly Reproducible Nanolithography by Dynamic Plough of an Atomic-Force Microscope Tip and Thermal-Annealing Treatment : DEVICE CONCEPTS, ARCHITECTURAL STRATEGIES AND INTERFACING METHODLOGIES FOR NANOSCALE SENSOR SYSTEMSXIAOFENG LU; BALOCCO, Claudio; FUHUA YANG et al.IEEE transactions on nanotechnology. 2011, Vol 10, Num 1, pp 53-58, issn 1536-125X, 6 p.Article

AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHzSARAZIN, N; MORVAN, E; DI FORTE POISSON, M. A et al.IEEE electron device letters. 2010, Vol 31, Num 1, pp 11-13, issn 0741-3106, 3 p.Article

Fully integrated three-axis Hall magnetic sensor based on micromachined structuresSILEO, L; TODARO, M. T; TASCO, V et al.Microelectronic engineering. 2010, Vol 87, Num 5-8, pp 1217-1219, issn 0167-9317, 3 p.Conference Paper

Polarization engineering in GaN power transistorsUEDA, Tetsuzo; MURATA, Tomohiro; NAKAZAWA, Satoshi et al.Physica status solidi. B. Basic research. 2010, Vol 247, Num 7, pp 1735-1739, issn 0370-1972, 5 p.Conference Paper

AlGaN/GaN two-dimensional electron gas Schottky barrier photodiodes with multiple MgxNy/GaN layersCHANG, P. C; LEE, K. H; CHANG, S. J et al.Semiconductor science and technology. 2009, Vol 24, Num 10, issn 0268-1242, 105005.1-105005.6Article

High-Quality Schottky Contacts for Limiting Leakage Currents in Ge-Based Schottky Barrier MOSFETsMUHAMMAD KHALED HUSAIN; LI, Xiaoli V; DE GROOT, Cornelis Hendrik et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 3, pp 499-504, issn 0018-9383, 6 p.Article

Thermionic field emission in Pt-Al0.45Ga0.55N Schottky photodiodeCHENG, C. J; SI, J. J; DING, J. X et al.Physica status solidi. A, Applications and materials science (Print). 2009, Vol 206, Num 2, pp 363-366, issn 1862-6300, 4 p.Article

Novel TCAD-Oriented Definition of the OFF-State Breakdown Voltage in Schottky-Gate FETs : A 4H-SiC MESFET Case StudyFURNO, Mauro; BONANI, Fabrizio; GHIONE, Giovanni et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 12, pp 3347-3353, issn 0018-9383, 7 p.Article

An empirical study of dynamic properties of an individual carbon nanotube electron source systemRIBAYA, Bryan P; NIEMANN, Darrell L; MAKAREWICZ, Joseph et al.Solid-state electronics. 2008, Vol 52, Num 10, pp 1680-1686, issn 0038-1101, 7 p.Conference Paper

MOS capacitors obtained by wet oxidation of n-type 4H-SiC pre-implanted with nitrogenPOGGI, A; MOSCATELLI, F; HIJIKATA, Y et al.Microelectronic engineering. 2007, Vol 84, Num 12, pp 2804-2809, issn 0167-9317, 6 p.Article

N-p-n bipolar-junction-transistor detector with integrated p-n-p biasing transistor : feasibility study, design and first experimental resultsVERZELLESI, Giovanni; BERGAMINI, Davide; DALLA BETTA, Gian-Franco et al.Semiconductor science and technology. 2006, Vol 21, Num 2, pp 194-200, issn 0268-1242, 7 p.Article

Modeling observed capacitance-voltage hysteresis in metal-SiO2-thin film organic semiconductor devicesNIEMANN, Darrell; GUNTHER, Norman; KWONG, Charles et al.Solid-state electronics. 2006, Vol 50, Num 6, pp 1097-1104, issn 0038-1101, 8 p.Conference Paper

Characterization of electrical and crystallographic properties of metal layers at deca-nanometer scale using Kelvin probe force microscopeGAILLARD, N; MARIOLLE, D; BERTIN, F et al.Microelectronic engineering. 2006, Vol 83, Num 11-12, pp 2169-2174, issn 0167-9317, 6 p.Conference Paper

Germanium : From its discovery to SiGe devicesHAILER, E. E.Materials science in semiconductor processing. 2006, Vol 9, Num 4-5, pp 408-422, issn 1369-8001, 15 p.Conference Paper

High-resolution microelectromechanical scanners for miniaturized dual-axes confocal microscopesRA, Hyejun; JUNG, Il-Woong; LEE, Daesung et al.SPIE proceedings series. 2005, pp 132-135, isbn 0-8194-5695-0, 4 p.Conference Paper

MgZnO/ZnO heterostructures for UV light emitters and spintronic applications: Material growth and device design (invited talk)OSINSKY, A; DONG, J. W; KAUSER, M. Z et al.Proceedings - Electrochemical Society. 2004, pp 70-79, issn 0161-6374, isbn 1-56677-419-5, 10 p.Conference Paper

Highly functional tunnelling devices integrated in 3DWERNERSSON, Lars-Erik; LIND, Erik; LINDSTRÖM, Peter et al.International journal of circuit theory and applications. 2003, Vol 31, Num 1, pp 105-117, issn 0098-9886, 13 p.Article

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