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Results 1 to 25 of 27119

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Bias dependence of ionizing radiation damage in SiGe HBTs at different dose ratesYABIN SUN; JUN FU; JUN XU et al.Physica. B, Condensed matter. 2014, Vol 434, pp 95-100, issn 0921-4526, 6 p.Article

Body-Tied Germanium Tri-Gate Junctionless PMOSFET With In-Situ Boron Doped ChannelCHEN, Che-Wei; CHUNG, Cheng-Ting; TZENG, Ju-Yuan et al.IEEE electron device letters. 2014, Vol 35, Num 1, pp 12-14, issn 0741-3106, 3 p.Article

Built-in Effective Body-Bias Effect in Ultra-Thin-Body Hetero-Channel III-V-on-Insulator n-MOSFETsYU, Chang-Hung; PIN SU.IEEE electron device letters. 2014, Vol 35, Num 8, pp 823-825, issn 0741-3106, 3 p.Article

Dependence on an oxide trap's location of random telegraph noise (RTN) in GIDL current of n-MOSFETQUAN NGUYEN GIA; YOO, Sung-Won; HYUNSEUL LEE et al.Solid-state electronics. 2014, Vol 92, pp 20-23, issn 0038-1101, 4 p.Article

Distinction between interfacial layer effect and trap passivation effect of N2 plasma treatment on LTPS-TFTsMA, William Cheng-Yu.Solid-state electronics. 2014, Vol 100, pp 45-48, issn 0038-1101, 4 p.Article

Effect of Temperature and Electric Field on Degradation in Amorphous InGaZnO TFTs Under Positive Gate and Drain Bias StressJONG IN KIM; CHO, In-Tak; JOE, Sung-Min et al.IEEE electron device letters. 2014, Vol 35, Num 4, pp 458-460, issn 0741-3106, 3 p.Article

Flexible Self-Aligned Double-Gate IGZO TFTMÜNZENRIEDER, Niko; VOSER, Pascal; PETTI, Luisa et al.IEEE electron device letters. 2014, Vol 35, Num 1, pp 69-71, issn 0741-3106, 3 p.Article

High Mobility Bilayer Metal―Oxide Thin Film Transistors Using Titanium-Doped InGaZnOHSU, Hsiao-Hsuan; CHANG, Chun-Yen; CHENG, Chun-Hu et al.IEEE electron device letters. 2014, Vol 35, Num 1, pp 87-89, issn 0741-3106, 3 p.Article

Investigating and modeling impact ionization current in MOSFETsQUAN CHAU.Solid-state electronics. 2014, Vol 94, pp 66-71, issn 0038-1101, 6 p.Article

Performance Assessment of III―V Channel Ultra-Thin-Body Schottky-Barrier MOSFETsJAEHYUN LEE; MINCHEOL SHIN.IEEE electron device letters. 2014, Vol 35, Num 7, pp 726-728, issn 0741-3106, 3 p.Article

Performance Enhancement of Tunnel Field-Effect Transistors by Synthetic Electric Field EffectMORITA, Yukinori; MORI, Takahiro; MASAHARA, Meishoku et al.IEEE electron device letters. 2014, Vol 35, Num 7, pp 792-794, issn 0741-3106, 3 p.Article

Performance improvement of oxide thin-film transistors with a two-step-annealing methodMIN LI; LINFENG LAN; MIAO XU et al.Solid-state electronics. 2014, Vol 91, pp 9-12, issn 0038-1101, 4 p.Article

Physically Based Evaluation of Electron Mobility in Ultrathin-Body Double-Gate Junctionless TransistorsKANGLIANG WEI; LANG ZENG; JUNCHENG WANG et al.IEEE electron device letters. 2014, Vol 35, Num 8, pp 817-819, issn 0741-3106, 3 p.Article

Planarized ambipolar a-SiGe:H thin-film transistors: Influence of the sequence of fabrication processDOMINGUEZ, Miguel; ROSALES, Pedro; TORRES, Alfonso et al.Solid-state electronics. 2014, Vol 99, pp 45-50, issn 0038-1101, 6 p.Article

Resistorless BJT bias and curvature compensation circuit at 3.4 nW for CMOS bandgap voltage referencesMATTIA, O. E; KLIMACH, H; BAMPI, S et al.Electronics letters. 2014, Vol 50, Num 12, pp 863-864, issn 0013-5194, 2 p.Article

Semiconductor Capacitance Penalty per Gate in Single- and Double-Gate FETsMAJUMDAR, Amlan.IEEE electron device letters. 2014, Vol 35, Num 6, pp 609-611, issn 0741-3106, 3 p.Article

Temperature dependent subthreshold model of long channel GAA MOSFET including localized charges to study variations in its temperature sensitivityGAUTAM, Rajni; SAXENA, Manoj; GUPTA, R. S et al.Microelectronics and reliability. 2014, Vol 54, Num 1, pp 37-43, issn 0026-2714, 7 p.Article

Total ionizing dose effect in 0.2 μm PDSOI NMOSFETs with shallow trench isolationCHAO PENG; ZHIYUAN HU; ZHENGXUAN ZHANG et al.Microelectronics and reliability. 2014, Vol 54, Num 4, pp 730-737, issn 0026-2714, 8 p.Article

Unified Analytic Model for Current―Voltage Behavior in Amorphous Oxide Semiconductor TFTsSUNGSIK LEE; STRIAKHILEV, Denis; SANGHUN JEON et al.IEEE electron device letters. 2014, Vol 35, Num 1, pp 84-86, issn 0741-3106, 3 p.Article

Uniform-Base InP/GaInAsSb DHBTs Exhibiting fMAX/fT > 635/420 GHzFLÜCKIGER, Ralf; LÖVBLOM, Rickard; ALEXANDROVA, Maria et al.IEEE electron device letters. 2014, Vol 35, Num 2, pp 166-168, issn 0741-3106, 3 p.Article

Investigation of interface, shallow and deep oxide traps under NBTI stress using charge pumping techniqueTAHI, Hakim; DJEZZAR, Boualem; BENABDELMOUMENE, Abdelmadjid et al.Microelectronics and reliability. 2014, Vol 54, Num 5, pp 882-888, issn 0026-2714, 7 p.Article

ZrO2 insulator modified by a thin Al2O3 film to enhance the performance of InGaZnO thin-film transistorXINGWEI DING; JIANHUA ZHANG; HAO ZHANG et al.Microelectronics and reliability. 2014, Vol 54, Num 11, pp 2401-2405, issn 0026-2714, 5 p.Article

Trapping and Reliability Assessment in D-Mode GaN-Based MIS-HEMTs for Power ApplicationsMENEGHINI, Matteo; BISI, Davide; MARCON, Denis et al.IEEE transactions on power electronics. 2014, Vol 29, Num 5, pp 2199-2207, issn 0885-8993, 9 p.Article

Crystallographic-orientation-dependent GIDL current in Tri-gate MOSFETs under hot carrier stressJAE HOON LEE; JONG TAE PARK.Microelectronics and reliability. 2014, Vol 54, Num 9-10, pp 2315-2318, issn 0026-2714, 4 p.Conference Paper

Traps localization and analysis in GaN HEMTsCHINI, A; SOCI, F; MENEGHESSO, G et al.Microelectronics and reliability. 2014, Vol 54, Num 9-10, pp 2222-2226, issn 0026-2714, 5 p.Conference Paper

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