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Analysis and comparison of Direct Digital Frequency Synthesizers implemented on FPGAGENOVESE, Mariangela; NAPOLI, Ettore; DE CARO, Davide et al.Integration (Amsterdam). 2014, Vol 47, Num 2, pp 261-271, issn 0167-9260, 11 p.Article

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Dual Ion Effect of the Lithium Silicate Resistance Random Access MemoryCHANG, Kuan-Chang; TSAI, Tsung-Ming; HUANG, Syuan-Yong et al.IEEE electron device letters. 2014, Vol 35, Num 5, pp 530-532, issn 0741-3106, 3 p.Article

Electrical Conductivity Discontinuity at Melt in Phase Change MemoryCRESPI, Luca; GHETTI, Andrea; BONIARDI, Mattia et al.IEEE electron device letters. 2014, Vol 35, Num 7, pp 747-749, issn 0741-3106, 3 p.Article

Enhanced endurance reliability and low current operation for AlO_x/HfO_x based unipolar RRAM with Ni electrodeCHEN, Yu-Sheng; CHEN, Pang-Shiu; LEE, Heng-Yuan et al.Solid-state electronics. 2014, Vol 94, pp 1-5, issn 0038-1101, 5 p.Article

Ferroelectret film-based patch-type sensor for continuous blood pressure monitoringNOH, S; YOON, C; HYUN, E et al.Electronics letters. 2014, Vol 50, Num 3, pp 143-144, issn 0013-5194, 2 p.Article

HfO₂ Based High-k Inter-Gate Dielectrics for Planar NAND Flash MemoryBREUIL, Laurent; LISONI, Judit G; BLOMME, Pieter et al.IEEE electron device letters. 2014, Vol 35, Num 1, pp 45-47, issn 0741-3106, 3 p.Article

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Hybrid memristor/RTD structure-based cellular neural networks with applications in image processingSHUKAI DUAN; XIAOFANG HU; LIDAN WANG et al.Neural computing & applications (Print). 2014, Vol 25, Num 2, pp 291-296, issn 0941-0643, 6 p.Article

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Impact of Stress Mode on Stochastic BTI in Scaled MG/HK CMOS DevicesKERBER, Andreas; SRINIVASAN, Purushothaman.IEEE electron device letters. 2014, Vol 35, Num 4, pp 431-433, issn 0741-3106, 3 p.Article

Improvement of Bottom Oxide Thickness Scaling of Inter-Poly Dielectric by Floating Gate Top Plasma NitridationWANG, Zih-Song; HUANG, Wei-Shiang; CHEN, Chih-Yuan et al.IEEE electron device letters. 2014, Vol 35, Num 2, pp 190-192, issn 0741-3106, 3 p.Article

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Low power wide gates for modern power efficient processorsASYAEI, Mohammad; PEIRAVI, Ali.Integration (Amsterdam). 2014, Vol 47, Num 2, pp 272-283, issn 0167-9260, 12 p.Article