Selected Papers from ISDRS 2009ILIADIS, Agis A; AKTURK, Akin.Solid-state electronics. 2010, Vol 54, Num 10, issn 0038-1101, 191 p.Conference Proceedings

Special Issue on the 2008 IEEE International Solid-State Circuits conference (ISSCC)HAM, Donhee; HIDAKA, Hideto; HO, Ron et al.IEEE journal of solid-state circuits. 2009, Vol 44, Num 1, issn 0018-9200, 313 p.Conference Proceedings

Measurement of Local Peltier Constant at a MicrocontactKOYANO, Mikio; AKASHI, Naoya.Journal of electronic materials. 2009, Vol 38, Num 7, pp 1037-1040, issn 0361-5235, 4 p.Conference Paper

Local chemical state change in Co-O resistance random access memory : Force microscopySHIMA, Hisashi; TAKANO, Fumiyoshi; MURAMATSU, Hidenobu et al.Physica status solidi. Rapid research letters (Print). 2008, Vol 2, Num 3, pp 99-101, issn 1862-6254, 3 p.Article

A plane wave diffraction on a pin-hole in a film with a finite thickness and real electrodynamic propertiesCHKHALO, Nikolay I; DOROFEEV, Illarion A; SALASHCHENKO, Nikolay N et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7025, pp 702507.1-702507.7, issn 0277-786X, isbn 978-0-8194-7238-0 0-8194-7238-7Conference Paper

Correction of the EUV mirror substrate shape by ion beamCHKHALO, N; PARAMONOV, L; PESTOV, A et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7025, pp 702503.1-702503.4, issn 0277-786X, isbn 978-0-8194-7238-0 0-8194-7238-7Conference Paper

Formation of source and drain of α-Si:H TFT by ion implantation through metal techniqueNGUYEN VAN HIEU.Physica. B, Condensed matter. 2007, Vol 392, Num 1-2, pp 38-42, issn 0921-4526, 5 p.Article

Multi-bit storage in reset process of Phase-change Random Access Memory (PRAM)YI ZHANG; JIE FENG; YIN ZHANG et al.Physica status solidi. Rapid research letters (Print). 2007, Vol 1, Num 1, issn 1862-6254, R28-R30Article

Transverse averaging technique for the depletion capacitance of nonuniform PN-junctionsBARYBIN, Anatoly A; SANTOS, Edval J. P.Semiconductor science and technology. 2007, Vol 22, Num 4, pp 312-319, issn 0268-1242, 8 p.Article

Characterization of defect removal in hydrogenated and deuterated amorphous silicon thin film transistorsFLEWITT, A. J; LIN, S; MILNE, W. I et al.Journal of non-crystalline solids. 2006, Vol 352, Num 9-20, pp 1700-1703, issn 0022-3093, 4 p.Conference Paper

Improved microcrystalline silicon TFTsKANDOUSSI, K; GAILLARD, A; SIMON, C et al.Journal of non-crystalline solids. 2006, Vol 352, Num 9-20, pp 1728-1731, issn 0022-3093, 4 p.Conference Paper

Effect of UV and visible light radiation on the electrical performances of transparent TFTs based on amorphous indium zinc oxideBARQUINHA, P; PIMENTEL, A; MARQUES, A et al.Journal of non-crystalline solids. 2006, Vol 352, Num 9-20, pp 1756-1760, issn 0022-3093, 5 p.Conference Paper

Zinc tin oxide transistors on flexible substratesJACKSON, W. B; HERMAN, G. S; HOFFMAN, R. L et al.Journal of non-crystalline solids. 2006, Vol 352, Num 9-20, pp 1753-1755, issn 0022-3093, 3 p.Conference Paper

Transport in a lithographically defined Si:Ge Coulomb-blockade island under microwave irradiationDOVINOS, Dimitris; WILLIAMS, David.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 8, pp 085313.1-085313.7, issn 1098-0121Article

Band alignment issues in metal/dielectric stacks: A combined photoemission and inverse photoemission study of the HfO₂/Pt and HfO₂/Hf systemsSAYAN, S; BARTYNSKI, R. A; GARFUNKEL, E et al.Proceedings - Electrochemical Society. 2004, pp 255-263, issn 0161-6374, isbn 1-56677-406-3, 9 p.Conference Paper

Infrared light induced degradation of polymeric materials used in optical devicesOSENBACH, J. W; JACK, C. A; SINGH, D et al.Proceedings - Electronic Components Conference. 2004, issn 0569-5503, isbn 0-7803-8365-6, 2Vol, Vol 1, 789-797Conference Paper

An 8V organic complementary logic process for flexible polymeric substratesKLAUK, Hagen; HALIK, Marcus; ZSCHIESCHANG, Ute et al.DRC : Device research conference. 2004, pp 230-231, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Influence of nitrogen in ultra-thin SiON on negative bias temperature instability under AC stressMITANI, Yuichiro.International Electron Devices Meeting. 2004, pp 117-120, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Implications of progressive wear-out for lifetime extrapolation of ultra-thin (EOT ∼ 1 nm) SiON filmsKACZER, B; DEGRAEVE, R; O'CONNOR, R et al.International Electron Devices Meeting. 2004, pp 713-716, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Simultaneously determining Young's modulus, coefficient of thermal expansion, poisson ratio and thickness of thin films on silicon waferENBOA WU; YANG, Albert J. D; SHAO, Ching-An et al.Proceedings - Electronic Components Conference. 2004, issn 0569-5503, isbn 0-7803-8365-6, 2Vol, Vol 1, 901-905Conference Paper

Structure and dynamics of SI interstitials at SI(001) and SI(001)/SIO₂KIRICHENKO, Taras A; YU, Decai; BANERJEE, Sanjay K et al.Proceedings - Electrochemical Society. 2004, pp 112-119, issn 0161-6374, isbn 1-56677-406-3, 8 p.Conference Paper

Oxidation simulation of silicon nanostructures on silicon-on-insulator substratesUEMATSU, M; KAGESHIMA, H; SHIRAISHI, K et al.Proceedings - Electrochemical Society. 2003, pp 407-412, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Investigation on convergence and stability of self-consistent Monte Carlo device simulationsCLERC, R; PALESTRI, P; ABRAMO, A et al.ESSCIRC 2002 : European solid-state circuits conferenceEuropean solid-state device research conference. 2002, pp 191-194, isbn 88-900847-8-2, 4 p.Conference Paper

COTS electronics & the naval shock environmentBROWN, S. A; PICKERING, M. D.IEE conference publication. 2002, pp 114-117, issn 0537-9989, isbn 0-85296-750-0, 4 p.Conference Paper

Eliminating non-logical states from linear quantum-dot-cellular automataLUSTH, J. C; HANNA, C. B; DIAZ-VELEZ, J. C et al.Microelectronics journal. 2001, Vol 32, Num 1, pp 81-84, issn 0959-8324Article