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Results 1 to 25 of 19835

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2 S/mm transconductance InAs-inserted-channel modulation doped field effect transistors with a very close gate-to-channel separation of 14.5 nmXU, D; HEISS, H; SEXL, M et al.Japanese journal of applied physics. 1997, Vol 36, Num 4B, pp L470-L472, issn 0021-4922, 2Article

A cleaning model for removal of particles due to laser-induced thermal expansion of substrate surfaceLU, Y.-F; SONG, W.-D; YE, K.-D et al.Japanese journal of applied physics. 1997, Vol 36, Num 10A, pp L1304-L1306, issn 0021-4922, 2Article

A generalized expression for collector transit time of heterojunction bipolar transistors taking account of electron velocity modulationNAKAJIMA, H.Japanese journal of applied physics. 1997, Vol 36, Num 2, pp 667-668, issn 0021-4922, 1Article

A method for determining elastic constants of nematic liquid crystals at high electric fieldsZHOU, Y; SATO, S.Japanese journal of applied physics. 1997, Vol 36, Num 7A, pp 4397-4400, issn 0021-4922, 1Article

A new analysis of 4-rod radio-frequency quadrupole linac with intrinsic field distortionsKAPIN, V.Japanese journal of applied physics. 1997, Vol 36, Num 4A, pp 2415-2427, issn 0021-4922, 1Article

A novel graphical analysis method for double crystal X-ray diffraction measurements of strained layer superlattices grown on (100) substrateNAKASHIMA, K; SUGIURA, H.Japanese journal of applied physics. 1997, Vol 36, Num 8, pp 5351-5355, issn 0021-4922, 1Article

A simple optical properties modeling of microcrystalline silicon for the energy conversion application by the effective medium approximation methodCHO, W. Y; LIM, K. S.Japanese journal of applied physics. 1997, Vol 36, Num 3A, pp 1094-1098, issn 0021-4922, 1Article

All-solid-state electrochromic display device of Prussian blue and WO3 particulate filmSU, L; FANG, J; LIANG, B et al.Japanese journal of applied physics. 1997, Vol 36, Num 6A, pp L684-L686, issn 0021-4922, 2Article

Amorphous Se75Ge25 resist profile simulation of focused-ion-beam lithographyLEE, H.-Y; CHUNG, H.-B.Japanese journal of applied physics. 1997, Vol 36, Num 4A, pp 2409-2414, issn 0021-4922, 1Article

An observation of oxygen precipitation retardation phenomenon induced by 450°C anneal in Czochralski siliconKUNG, C.-Y; HSU, W; CHIN MING LIU et al.Japanese journal of applied physics. 1997, Vol 36, Num 8, pp 5025-5028, issn 0021-4922, 1Article

Analysis of local lattice strains around plate-like oxygen precipitates in Czochralski-silicon wafers by convergent-beam electron diffractionOKUYAMA, T; NAKAYAMA, M; SADAMITSU, S et al.Japanese journal of applied physics. 1997, Vol 36, Num 6A, pp 3359-3365, issn 0021-4922, 1Article

Annealing properties of defects in B+- and F+-implanted Si studied using monoenergetic positron beamsUEDONO, A; KITANO, J; HAMADA, K et al.Japanese journal of applied physics. 1997, Vol 36, Num 5A, pp 2571-2580, issn 0021-4922, 1Article

Ba0.3Sr0.7TiO3 thin film production on atomically flat SrTiO3 (100) substrates by a pulsed laser deposition and dielectric propertiesNAKANO, M; TABATA, H; KATAYAMA, Y et al.Japanese journal of applied physics. 1997, Vol 36, Num 6A, pp 3564-3568, issn 0021-4922, 1Article

Behavior of gallium secondary ion intensity in gallium focused ion beam secondary ion mass spectrometrySAKAMOTO, T; OWARI, M; NIHEI, Y et al.Japanese journal of applied physics. 1997, Vol 36, Num 3A, pp 1287-1291, issn 0021-4922, 1Article

Boron implantation into GaAs/Ga0.5In0.5P heterostructuresHENKEL, A; DELAGE, S. L; DI FORTE-POISSON, M. A et al.Japanese journal of applied physics. 1997, Vol 36, Num 1A, pp 175-180, issn 0021-4922, 1Article

Ce-activated SrS thin film electroluminescent devices fabricated by multi source deposition using Ga2S3 precursorINOUE, Y; TANAKA, K; OKAMOTO, S et al.Japanese journal of applied physics. 1997, Vol 36, Num 7A, pp 4335-4338, issn 0021-4922, 1Article

Characterization of a twin-free orthorhombic YBa2Cu3Ox crystalKUTAMI, H; YAMADA, Y; KOYAMA, S et al.Japanese journal of applied physics. 1997, Vol 36, Num 2, pp 674-675, issn 0021-4922, 1Article

Chemical state of phosphorus at the silicon surfaceSATO, Y; YOSHIMURA, Y; ONO, K et al.Japanese journal of applied physics. 1997, Vol 36, Num 7A, pp 4299-4300, issn 0021-4922, 1Article

Coating of carbon nanotube with nickel by electroless plating methodLI, Q; FAN, S; HAN, W et al.Japanese journal of applied physics. 1997, Vol 36, Num 4B, pp L501-L503, issn 0021-4922, 2Article

Coherent layered structures in Fe/Au monatomic multilayers with addition of fractional atomic layersMITANI, S; TAKANASHI, K; SHIGEMOTO, Y et al.Japanese journal of applied physics. 1997, Vol 36, Num 8A, pp L1045-L1047, issn 0021-4922, 2Article

Combination of additional noncontact dampers and superconducting levitation using melt-processed YBaCuO bulk superconductorsTESHIMA, H.Japanese journal of applied physics. 1997, Vol 36, Num 1A, pp 68-75, issn 0021-4922, 1Article

Combination of photo and atomic force microscope lithographies by use of an organosilane monolayer resistSUGIMURA, H; NAKAGIRI, N.Japanese journal of applied physics. 1997, Vol 36, Num 7B, pp L968-L970, issn 0021-4922, 2Article

Compact diode-pumped Cr3+:LiSrAlF6 femtosecond laserAOSHIMA, S.-I; ITOH, I; TSUCHIYA, Y et al.Japanese journal of applied physics. 1997, Vol 36, Num 2A, pp L114-L116, issn 0021-4922, 2Article

Comparative role of metal-organic decomposition-derived [100] and [111] in electrical properties of Pb(Zr, Ti)O3 thin filmsCHEN, S.-Y; CHEN, I.-W.Japanese journal of applied physics. 1997, Vol 36, Num 7A, pp 4451-4458, issn 0021-4922, 1Article

Comparison of homoepitaxial growth of YBa2Cu3Oy films on variously oriented YBa2Cu3Oy single crystalsWEN, J; ZAMA, H; KONISHI, M et al.Japanese journal of applied physics. 1997, Vol 36, Num 2B, pp L194-L196, issn 0021-4922, 2Article

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