A hierarchical defect repair approach for hybrid nano/CMOS memory reliability enhancementHABIBI, Mehdi; POORMEIDANI, Hossein.Microelectronics and reliability. 2014, Vol 54, Num 2, pp 475-484, issn 0026-2714, 10 p.Article

A novel partial-SOI LDMOSFET (>800 V) with n-type floating buried layer in substrateCHAO XIA; XINHONG CHENG; ZHONGJIAN WANG et al.Microelectronics and reliability. 2014, Vol 54, Num 3, pp 582-586, issn 0026-2714, 5 p.Article

A polymer based miniature loop heat pipe with silicon substrate and temperature sensors for high brightness light-emitting diodesHUAIYU YE; SOKOLOVSKIJ, Robert; VAN ZEIJL, Henk W et al.Microelectronics and reliability. 2014, Vol 54, Num 6-7, pp 1355-1362, issn 0026-2714, 8 p.Article

A review: On the development of low melting temperature Pb-free soldersKOTADIA, Hiren R; HOWES, Philip D; MANNAN, Samjid H et al.Microelectronics and reliability. 2014, Vol 54, Num 6-7, pp 1253-1273, issn 0026-2714, 21 p.Article

An 8-level 3-bit cell programming technique in NOR-type nano-scaled SONOS memory devicesYUE XU; CHUNBO WU; XIAOLI JI et al.Microelectronics and reliability. 2014, Vol 54, Num 1, pp 331-334, issn 0026-2714, 4 p.Article

Characterization of MIS structures and PTFTs using TiOx deposited by spin-coatingMENESES, C; SANCHEZ, J. G; ESTRADA, M et al.Microelectronics and reliability. 2014, Vol 54, Num 5, pp 893-898, issn 0026-2714, 6 p.Article

Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurementCHUNMENG DOU; SHOJI, Tomoya; NATORI, Kenji et al.Microelectronics and reliability. 2014, Vol 54, Num 4, pp 725-729, issn 0026-2714, 5 p.Article

Damage threshold determination and non-destructive identification of possible failure sites in PIN limiterCHER MING TAN; WEN ZHI YU.Microelectronics and reliability. 2014, Vol 54, Num 5, pp 960-964, issn 0026-2714, 5 p.Article

Effect of binding force between silver paste and silicon on power degradation of crystalline silicon solar moduleHONG YANG; HE WANG; CHUANKE CHEN et al.Microelectronics and reliability. 2014, Vol 54, Num 1, pp 188-191, issn 0026-2714, 4 p.Article

Effect of geometric complexities and nonlinear material properties on interfacial crack behavior in electronic devicesSINHA, Koustav; VARGHESE, Joe; DASGUPTA, Abhijit et al.Microelectronics and reliability. 2014, Vol 54, Num 3, pp 610-618, issn 0026-2714, 9 p.Article

Effects of solder balls and arrays on the failure behavior in Package-on-Package structureWANG, Xi-Shu; SU JIA; REN, Huai-Hui et al.Microelectronics and reliability. 2014, Vol 54, Num 3, pp 633-640, issn 0026-2714, 8 p.Article

Electron fluence driven, Cu catalyzed, interface breakdown mechanism for BEOL low-K time dependent dielectric breakdownFEN CHEN; SHINOSKY, Michael A.Microelectronics and reliability. 2014, Vol 54, Num 3, pp 529-540, issn 0026-2714, 12 p.Article

Estimation of the degradation rate of multi-crystalline silicon photovoltaic module under thermal cycling stressNOCHANG PARK; JAESEONG JEONG; CHANGWOON HAN et al.Microelectronics and reliability. 2014, Vol 54, Num 8, pp 1562-1566, issn 0026-2714, 5 p.Article

High temperature bias-stress-induced instability in power trench-gated MOSFETsHAO, J; RIOUX, M; SULIMAN, S. A et al.Microelectronics and reliability. 2014, Vol 54, Num 2, pp 374-380, issn 0026-2714, 7 p.Article

High-K dielectric breakdown in nanoscale logic devices ― Scientific insight and technology impactRAGHAVAN, Nagarajan; KIN LEONG PEY; SHUBHAKAR, Kalya et al.Microelectronics and reliability. 2014, Vol 54, Num 5, pp 847-860, issn 0026-2714, 14 p.Article

Improved device variability in scaled MOSFETs with deeply retrograde channel profile : RELIABILITY AND VARIABILITY OF DEVICES FOR CIRCUITS AND SYSTEMSWOO, Jason; CHIEN, P. Y; YANG, Frank et al.Microelectronics and reliability. 2014, Vol 54, Num 6-7, pp 1090-1095, issn 0026-2714, 6 p.Article

Mechanical and corrosion resistances of a Sn-0.7 wt.%Cu lead-free solder alloyFREITAS, Emmanuelle S; OSORIO, Wislei R; SPINELLI, José E et al.Microelectronics and reliability. 2014, Vol 54, Num 6-7, pp 1392-1400, issn 0026-2714, 9 p.Article

Microstructure and elevated-temperature shear strength of Zn-4Al-3Mg-xSn high-temperature lead-free soldersMAHMUDI, R; FARASHEH, D.Microelectronics and reliability. 2014, Vol 54, Num 8, pp 1592-1597, issn 0026-2714, 6 p.Article

Microstructure and shear strength of Sn37Pb/Cu solder joints subjected to isothermal agingXIAOWU HU; YULONG LI; YONG LIU et al.Microelectronics and reliability. 2014, Vol 54, Num 8, pp 1575-1582, issn 0026-2714, 8 p.Article

Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: A reviewGERRER, L; DING, J; AMOROSO, S. M et al.Microelectronics and reliability. 2014, Vol 54, Num 4, pp 682-697, issn 0026-2714, 16 p.Article

Monitoring extent of curing and thermal―mechanical property study of printed circuit board substratesJIE ZHANG; TIAN LI; HUIPING WANG et al.Microelectronics and reliability. 2014, Vol 54, Num 3, pp 619-628, issn 0026-2714, 10 p.Article

Predicting bond failure after 1.5 ms of bonding, an initial studyTIETÄVÄINEN, Aino; RAUHALA, Timo; SEPPÄNEN, Henri et al.Microelectronics and reliability. 2014, Vol 54, Num 6-7, pp 1452-1454, issn 0026-2714, 3 p.Article

Quality assessment of ZnO-based varistors by 1/f noiseHASSE, Lech Z; BABICZ, Sylwia; KACZMAREK, Leszek et al.Microelectronics and reliability. 2014, Vol 54, Num 1, pp 192-199, issn 0026-2714, 8 p.Article

Reliability and lifetime modeling of wireless sensor nodesCHAONAN WANG; LIUDONG XING; VOKKARANE, Vinod M et al.Microelectronics and reliability. 2014, Vol 54, Num 1, pp 160-166, issn 0026-2714, 7 p.Article

Reliability of SMD interconnections on flexible low-temperature substrates with inkjet-printed conductorsPUTAALA, Jussi; HANNU, Jari; KUNNARI, Esa et al.Microelectronics and reliability. 2014, Vol 54, Num 1, pp 272-280, issn 0026-2714, 9 p.Article