Fluorine generation by gamma radiolysis of a fluoride salt mixtureTOTH, L. M; FELKER, L. K.Radiation effects. 1990, Vol 112, Num 4, pp 201-210, issn 0033-7579, 10 p.Article

A comparison between electron and ion damage in quartzHOWITT, D. G; CHAN, H. W; VANCE, E. R et al.Radiation effects. 1990, Vol 112, Num 3, pp 39-45, issn 0033-7579Article

Defects in cubic SiC on SiNAGESH, V; FARMER, J. W; DAVIS, R. F et al.Radiation effects. 1990, Vol 112, Num 3, pp 77-84, issn 0033-7579Article

Effect of low dose neutron irradiation on the mechanical properties of an AlMgSi alloy = Influence d'une irradiation par neutrons à faible dose sur les propriétés mécaniques d'un alliage AlMgSiISMAIL, Z. H.Radiation effects. 1990, Vol 112, Num 4, pp 105-110, issn 0033-7579Article

IR study of proton and UV irradiated polyethyleneFOTI, A. M; CALCAGNO, L; BARATTA, G. A et al.Radiation effects. 1990, Vol 112, Num 3, pp 61-68, issn 0033-7579Article

Radiation induced microstructural evolution and amorphization of intermetallic compounds = Evolution microstructurale induite par rayonnement et amorphisation des composés intermétalliquesPEDRAZA, D. F.Radiation effects. 1990, Vol 112, Num 3, pp 11-37, issn 0033-7579Article

The chemical physics of low-energy ion beam-surface interactions: the panorama of phenomena involved = Physico-chimie des interactions surface-faisceau ionique de faible énergie: panorama des phénomènes impliquésKASI, S. R; RABALAIS, J. W.Radiation effects. 1990, Vol 112, Num 4, pp 119-134, issn 0033-7579Article

Use of computer simulations to determine steady-state distributions in ion bombardmentMANNING, I.Radiation effects. 1990, Vol 112, Num 3, pp 5-10, issn 0033-7579Article

Population of projectile-ion states during the passage of high energy Ne-ions through thin carbon foilsSCHIWIETZ, G.Radiation effects. 1990, Vol 112, Num 4, pp 195-200, issn 0033-7579, 6 p.Article

Bent crystal application to formation and diagnostics of proton beamBAVIJEV, M. D; TCHESNOKOV, YU. A; RZAEV, R. A et al.Radiation effects. 1989, Vol 107, Num 2-4, pp 157-165, issn 0033-7579, 9 p.Article

Annealing of divacancy-related infrared absorption bands in boron-doped siliconSVENSSON, B. G; JOHNSSON, K; XU, D.-X et al.Radiation effects. 1989, Vol 111-112, Num 1-2, pp 439-447, issn 0033-7579Article

Atomic displacements of Si in the Si(111) √3×√3-B surfaceLI LUO; SMITH, G. A; HASHIMOTO, S et al.Radiation effects. 1989, Vol 111-112, Num 1-2, pp 125-129, issn 0033-7579Article

Corrosion behaviour of pulsed laser treated maraging steel: Mössbauer spectroscopy and scanning electron microscopy study = Corrosion d'un acier maraging traité par laser pulsé: étude par microscopie électronique à balayage et spectrométrie MössbauerKULKARNI, A. V; RAM LAL; KANETKAR, S. M et al.Radiation effects. 1989, Vol 107, Num 2-4, pp 139-145, issn 0033-7579Article

Determination of optical constants near the fundamental absorption edge in semiconductorsMIL'SHTEIN, S; SENDERICHIN, A; IOFFE, A et al.Radiation effects. 1989, Vol 111-112, Num 1-2, pp 263-272, issn 0033-7579Article

Electron instabilities due to dislocation dangling bonds in silicon crystalsGRAZHULIS, V. A.Radiation effects. 1989, Vol 111-112, Num 1-2, pp 151-154, issn 0033-7579Article

Ion-beam-induced plastic deformation: a universal behavior of amorphous solids = Déformation plastique induite par faisceau ionique: un comportement universel des solides amorphesKLAUMÜNZER, S; CHANGLIN LI; LÖFFLER, S et al.Radiation effects. 1989, Vol 108, Num 1, pp 131-135, issn 0033-7579Article

On the core concentration and the formation kinetics of thermal donors in siliconLINDSTROM, J. L; XU, D.-X; WEMAN, H et al.Radiation effects. 1989, Vol 111-112, Num 1-2, pp 249-255, issn 0033-7579Article

Rie-induced damage and contamination in siliconLEE, Y. H; OEHRLEIN, G. S; RANSOM, C et al.Radiation effects. 1989, Vol 111-112, Num 1-2, pp 221-232, issn 0033-7579Article

Secondary ion emission from organic films under bombardment with a ^3SS beam at 3 MeV/ARIGGI, F; SPINA, R. M.Radiation effects. 1989, Vol 108, Num 2-4, pp 251-255, issn 0033-7579Article

Secondary ion mass spectrometry measurements of deuterium penetration into silicon by low pressure RF glow dischargesOEHRLEIN, G. S; SCILLA, G. J.Radiation effects. 1989, Vol 111-112, Num 1-2, pp 299-308, issn 0033-7579Article

States of hydrogen in crystalline semiconductorsPEARTON, S. J; STAVOLA, M; CORBETT, J. W et al.Radiation effects. 1989, Vol 111-112, Num 1-2, pp 323-344, issn 0033-7579Article

Stopping powers of havar, nickel, kapton and mylar for 3-18 MeV ⁷Li ions = Pouvoirs d'arrêt du havar, nickel, kapton et mylar pour des ions ⁷Li de 3.18 MeVRAISANEN, J; RAUHALA, E.Radiation effects. 1989, Vol 108, Num 1, pp 21-26, issn 0033-7579Article

Temperature dependence of ion-induced Auger electron emission from (111) silicon. I: ExperimentsBENAZETH, C; HECQUET, P; MAYORAL, C et al.Radiation effects. 1989, Vol 108, Num 2-4, pp 227-239, issn 0033-7579Article

The effect of incidence angle on disorder production in ion implanted SiSUKIRNO; CARTER, G.Radiation effects. 1989, Vol 108, Num 2-4, pp 163-183, issn 0033-7579Article

The efficiency of direct annihilation of primary radiation defects in high-resistivity siliconLUGAKOV, P. F; LUKASHEVICH, T. A.Radiation effects. 1989, Vol 108, Num 2-4, pp 159-162, issn 0033-7579Article