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An atomically accurate model for point defect aggregation in siliconSINNO, T; HAECKL, W; VON AMMON, W et al.Proceedings - Electrochemical Society. 2006, pp 77-88, issn 0161-6374, isbn 1-56677-439-X, 1Vol, 12 p.Conference Paper

Modeling growth behavior for Si1-xGex from SiH4 and GeH4 by CVDYANG, X. L; TAO, M.Proceedings - Electrochemical Society. 2006, pp 299-309, issn 0161-6374, isbn 1-56677-439-X, 1Vol, 11 p.Conference Paper

Lessons learned from the 300mm transitionDRAINA, J; FANDEL, D; FERRELL, J et al.Proceedings - Electrochemical Society. 2006, pp 135-154, issn 0161-6374, isbn 1-56677-439-X, 1Vol, 20 p.Conference Paper

Growth kinetics and electrical properties of ultrathin silicon-dioxide layersMASSOUD, Hisham Z.Proceedings - Electrochemical Society. 2006, pp 189-203, issn 0161-6374, isbn 1-56677-439-X, 1Vol, 15 p.Conference Paper

Probing nanoscale local lattice strains in advanced Si CMOS devices by CBED : A tutorial with recent resultsHUANG, J; CHIDAMBARAM, P. R; IRWIN, R. B et al.Proceedings - Electrochemical Society. 2006, pp 541-547, issn 0161-6374, isbn 1-56677-439-X, 1Vol, 7 p.Conference Paper

Metal contamination from process materials used for wet cleaning of silicon waferSINHA, Drew.Proceedings - Electrochemical Society. 2006, pp 91-98, issn 0161-6374, isbn 1-56677-438-1, 1Vol, 8 p.Conference Paper

New non-volatile memory with magnetic nano-dotsKOYANAGI, Mitsumasa; BEA, J. C; YIN, C.-K et al.Proceedings - Electrochemical Society. 2006, pp 209-215, issn 0161-6374, isbn 1-56677-438-1, 1Vol, 7 p.Conference Paper

A SERS investigation of the interaction of sulfur with goldWATLING, K; PARKER, G. K; HOPE, G. A et al.Proceedings - Electrochemical Society. 2006, pp 61-72, issn 0161-6374, isbn 1-56677-440-3, 1Vol, 12 p.Conference Paper

Frequency changes observed with the EQCM resulting from hydrophilic/hydrophobic transitionsWOODS, Ronald; JEFFREY, Matthew I.Proceedings - Electrochemical Society. 2006, pp 73-81, issn 0161-6374, isbn 1-56677-440-3, 1Vol, 9 p.Conference Paper

Development and scale-up of the FFC cambridge process for production of metalsHODGSON, D. R; FONES, A; FRAY, D. J et al.Proceedings - Electrochemical Society. 2006, pp 365-368, issn 0161-6374, isbn 1-56677-440-3, 1Vol, 4 p.Conference Paper

Electrochemical preparation of Fe-Mn alloy film in an organic bathLIU, P; YANG, Q; LI, G et al.Proceedings - Electrochemical Society. 2006, pp 393-400, issn 0161-6374, isbn 1-56677-440-3, 1Vol, 8 p.Conference Paper

Formation processes of chemically deposited copper sulfide thin filmsMUNCE, Carolyn G; PARKER, Gretel P; HOPE, Gregory A et al.Proceedings - Electrochemical Society. 2006, pp 401-412, issn 0161-6374, isbn 1-56677-440-3, 1Vol, 12 p.Conference Paper

Characterization of Cr-Ni multilayers from chroiniuni(III ) -nickel(II) baths using pulse-current platingCHAO YU CHEN; CHUN CHING HSU; UI WAIO LIU et al.Proceedings - Electrochemical Society. 2006, pp 413-418, issn 0161-6374, isbn 1-56677-440-3, 1Vol, 6 p.Conference Paper

Scenario for a yield model based on reliable defect density data and linked to advanced process controlNUTSCH, A; OECHSNER, R.Proceedings - Electrochemical Society. 2006, pp 433-452, issn 0161-6374, isbn 1-56677-439-X, 1Vol, 20 p.Conference Paper

Standardization of measurement of nitrogen concentration in CZ silicon crystalsINOUE, N; MASUMOTO, K; YAGI, H et al.Proceedings - Electrochemical Society. 2006, pp 453-460, issn 0161-6374, isbn 1-56677-439-X, 1Vol, 8 p.Conference Paper

Study of inhibition characteristics of slurry additives in copper CMP using force spectroscopyPHILIPOSSIAN, A; LEE, H; BABU, S. V et al.Proceedings - Electrochemical Society. 2006, pp 515-522, issn 0161-6374, isbn 1-56677-439-X, 1Vol, 8 p.Conference Paper

Semiconductor wafer bonding VIII : science, technology, and applications (Quebec PQ, 15-20 May 2005)Hobart, K.D; Bengtsson, S; Baumgart, H et al.Proceedings - Electrochemical Society. 2005, issn 0161-6374, isbn 1-56677-460-8, X, 462 p, isbn 1-56677-460-8Conference Proceedings

Advanced gate stack, source/drain and channel engineering for Si-based CMOS : naw materials, processes, and equipment (Quebec PQ, 16-18 May 2005)Gusev, Evgeni P; Iwai, Hiroshi; Öztürk, Mehmet C et al.Proceedings - Electrochemical Society. 2005, issn 0161-6374, isbn 1-56677-463-2, XV, 634 p, isbn 1-56677-463-2Conference Proceedings

Low temperature integration of CdZnTe(211)B/Si(100) by wafer bondingHUANG, J; CHA, D. K; KALECZYC, A et al.Proceedings - Electrochemical Society. 2005, pp 128-133, issn 0161-6374, isbn 1-56677-460-8, 6 p.Conference Paper

AlGaN/GaN heterostructure field effect transistors fabricated on 100mm Si/poly SiC complosite substratesROBERTS, J. C; RAJAGOPAL, P; KUB, F. J et al.Proceedings - Electrochemical Society. 2005, pp 151-156, issn 0161-6374, isbn 1-56677-460-8, 6 p.Conference Paper

Effect of wafer-scale shape variations and mounting in wafer bondingTUMER, K. T; SPEARING, S. M; HESTER, P et al.Proceedings - Electrochemical Society. 2005, pp 270-279, issn 0161-6374, isbn 1-56677-460-8, 10 p.Conference Paper

Fabrication of silicon-on-diamond substratesFEYGELSON, T. I; HOBART, K. D; ANCONA, M et al.Proceedings - Electrochemical Society. 2005, pp 439-449, issn 0161-6374, isbn 1-56677-460-8, 11 p.Conference Paper

Plasma bonding replacement methods for traditional bond technologiesFARRENS, Shari; DRAGOI, Viorel; PELZER, Rainer et al.Proceedings - Electrochemical Society. 2005, pp 58-63, issn 0161-6374, isbn 1-56677-460-8, 6 p.Conference Paper

Advanced SOI MOSFETs : structures and device physicsFAYNOT, O; VANDOOREN, A; GIFFARD, B et al.Proceedings - Electrochemical Society. 2005, pp 1-10, issn 0161-6374, isbn 1-56677-461-6, 10 p.Conference Paper

Nanoscale SOI mosfets : In search for the best geometryJINGBIN LI; WALLS, Thomas J; LIKHAREV, Konstantin K et al.Proceedings - Electrochemical Society. 2005, pp 11-20, issn 0161-6374, isbn 1-56677-461-6, 10 p.Conference Paper

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