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Controlling the axial temperature gradient in inductively heated Czochralski systemsGANSCHOW, S; REICHE, P; ZIEM, M et al.Crystal research and technology (1979). 2003, Vol 38, Num 1, pp 42-46, issn 0232-1300, 5 p.Article

Crystal structure of cis, cis, cis-1,2-epoxy-3,5-dibromo-4-hydroxy tetralinCELIK, I; DEMIRTAS, I; AKKURT, M et al.Crystal research and technology (1979). 2003, Vol 38, Num 2, pp 193-196, issn 0232-1300, 4 p.Article

Diffusion effects at the Au/p-CuInSe2 contact studied by XPSNEUMANN, H; YAKUSHEV, M. V; TOMLINSON, R. D et al.Crystal research and technology (1979). 2003, Vol 38, Num 7-8, pp 676-683, issn 0232-1300, 8 p.Article

Effect of oxygen partial pressure on silicon single crystal growth by floating zone technique: surface oxidation and Marangoni flowHIBIYA, Taketoshi; ASAI, Yoshihiko; SUMIJI, Masanobu et al.Crystal research and technology (1979). 2003, Vol 38, Num 7-8, pp 619-626, issn 0232-1300, 8 p.Article

Electrical and dielectric behavior of the system Gd1-xBaxCoO3 (x = 0.00, 0.10, 0.20) synthesized by chemical routeMANDAL, K. D; BEHERA, L; PRASAD, R. L et al.Crystal research and technology (1979). 2003, Vol 38, Num 6, pp 465-470, issn 0232-1300, 6 p.Article

Electrical properties of nitrogen implanted GaSe single crystalKARABULUT, O; PARLAK, M; TURAN, R et al.Crystal research and technology (1979). 2003, Vol 38, Num 9, pp 811-816, issn 0232-1300, 6 p.Article

In situ observation experiment for semiconductor solution growth under reduced convection condition: a reviewINATOMI, Yuko; KURIBAYASHI, Kazuhiko.Crystal research and technology (1979). 2003, Vol 38, Num 7-8, pp 535-541, issn 0232-1300, 7 p.Article

Noise thermometry in crystal growth facilities for the International Space Station (ISS)STENZEL, Ch; MEYER, Th; KRAUSE, H et al.Crystal research and technology (1979). 2003, Vol 38, Num 7-8, pp 697-706, issn 0232-1300, 10 p.Article

Optical absorption spectra and related parameters of ammonium zinc chloride crystal in the antiferroelectric and commensurate phasesGAFFAR, M. A; EL-FADL, A. Abu; BIN ANOOZ, S et al.Crystal research and technology (1979). 2003, Vol 38, Num 9, pp 798-810, issn 0232-1300, 13 p.Article

Some physical and magnetic properties of Mg-Zn ferriteMAZEN, S. A; MANSOUR, S. F; ZAKI, H. M et al.Crystal research and technology (1979). 2003, Vol 38, Num 6, pp 471-478, issn 0232-1300, 8 p.Article

Spectroscopic properties of Zn-naphtholimines-TCNQ charge transfer complexes with variable ligand radicalsROBLES MARTINEZ, J. G; SALMERON VALVERDE, A; ZEHE, A et al.Crystal research and technology (1979). 2003, Vol 38, Num 1, pp 94-99, issn 0232-1300, 6 p.Article

Structure defects and optical damage resistance in doubly doped In:Nd:LiNbO3 crystal waveguide substratesZHEN, X. H; ZHAO, L. C; XU, Y. H et al.Crystal research and technology (1979). 2003, Vol 38, Num 10, pp 903-907, issn 0232-1300, 5 p.Article

Studies on optical properties of polycrystalline SnO2:Sb thin films prepared using SnCl2 precursorELANGOVAN, E; RAMAMURTHI, K.Crystal research and technology (1979). 2003, Vol 38, Num 9, pp 779-784, issn 0232-1300, 6 p.Article

Transient and quasi-stationary simulation of heat and mass transfer in Czochralski silicon crystal growthVOIGT, A; WEICHMANN, C; NITSCHKOWSKI, J et al.Crystal research and technology (1979). 2003, Vol 38, Num 6, pp 499-505, issn 0232-1300, 7 p.Article

X-ray studies on quaternary system RbxK1-xBryCl1-yMOHANLAL, S. K; PATHINETTAM PADIYAN, D.Crystal research and technology (1979). 2003, Vol 38, Num 6, pp 494-498, issn 0232-1300, 5 p.Article

A comparative study for profiling ultrathin boron layers in siBASARAN, E; ADDEMIR, O; ASIAN, M. H et al.Crystal research and technology (1979). 2003, Vol 38, Num 12, pp 1037-1041, issn 0232-1300, 5 p.Article

Local 3D real space atomic structure of the simple icosahedral Ho11Mg15Zn74 quasicrystal from PDF dataBRÜHNE, S; UHRIG, E; GROSS, C et al.Crystal research and technology (1979). 2003, Vol 38, Num 12, pp 1023-1036, issn 0232-1300, 14 p.Article

Study on rapid growth of highly-deuterated DKDP crystalsWANG, S. L; GAO, Z. S; FU, Y. J et al.Crystal research and technology (1979). 2003, Vol 38, Num 11, pp 941-945, issn 0232-1300, 5 p.Article

Application of tungsten films for substrate masking in liquid phase epitaxial lateral overgrowth of GaAsDOBOSZ, D; ZYTKIEWICZ, Z. R; PIOTROWSKI, T. T et al.Crystal research and technology (1979). 2003, Vol 38, Num 3-5, pp 297-301, issn 0232-1300, 5 p.Conference Paper

Elastic and nonlinear optical properties of lithium tetraborateKASPROWICZ, D; KROUPA, J; MAJCHROWSKI, A et al.Crystal research and technology (1979). 2003, Vol 38, Num 3-5, pp 374-378, issn 0232-1300, 5 p.Conference Paper

Oxygen agglomeration and formation of oxygen-related thermal donors in heat-treated siliconEMTSEV, V. V; EMTSEV, V. V et al.AMMERLAAN, C. A. J; EMTSEV, V. V; EMTSEV, V. V et al.Crystal research and technology (1979). 2003, Vol 38, Num 3-5, pp 394-398, issn 0232-1300, 5 p.Conference Paper

Some unmeasured crystal propertiesRAAB, R. E.Crystal research and technology (1979). 2003, Vol 38, Num 3-5, pp 202-214, issn 0232-1300, 13 p.Conference Paper

Study of surface morphology of electrochemically etched n-Si (111) electrodes at different anodic potentialsJAKUBOWICZ, J.Crystal research and technology (1979). 2003, Vol 38, Num 3-5, pp 313-319, issn 0232-1300, 7 p.Conference Paper

A selection rule of solutes for void-resistant crystalline metallic alloys exposed to electromigrationZEHE, A.Crystal research and technology (1979). 2002, Vol 37, Num 8, pp 817-826, issn 0232-1300Article

Advances in microdiffraction with X-ray waveguideLAGOMARSINO, S; CEDOLA, A; DI FONZO, S et al.Crystal research and technology (1979). 2002, Vol 37, Num 7, pp 758-769, issn 0232-1300Article

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