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Results 1 to 25 of 6686

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A model for avalanche breakdown calculation in low-voltage trench power MOSFET devicesPACE, C; PIERRO, S; CILIA, V et al.Semiconductor science and technology. 2013, Vol 28, Num 1, issn 0268-1242, 015007.1-015007.6Article

A replacement of high-k process for CMOS transistor by atomic layer depositionHAN, Jin-Woo; BYUNG JOON CHOI; YANG, J. Joshua et al.Semiconductor science and technology. 2013, Vol 28, Num 8, issn 0268-1242, 082003.1-082003.4Article

A theoretical study on the effect of piezoelectric charges on the surface potential and surface depletion region of ZnO nanowiresPURAHMAD, Mohsen; STROSCIO, Michael A; DUTTA, Mitra et al.Semiconductor science and technology. 2013, Vol 28, Num 1, issn 0268-1242, 015019.1-015019.6Article

Comparison of spin lifetimes in n-Ge characterized between three-terminal and four-terminal nonlocal Hanle measurementsCHANG, L.-T; HAN, W; ZHOU, Y et al.Semiconductor science and technology. 2013, Vol 28, Num 1, issn 0268-1242, 015018.1-015018.7Article

Conduction mechanisms in 2D and 3D SIS capacitorsJACQUELINE, Sébastien; DOMENGES, Bernadette; VOIRON, Frédéric et al.Semiconductor science and technology. 2013, Vol 28, Num 4, issn 0268-1242, 045018.1-045018.10Article

Effect of oxygen partial pressure on the behavior of dual ion beam sputtered ZnO thin filmsSAURABH KUMAR PANDEY; SUSHIL KUMAR PANDEY; DESHPANDE, Uday P et al.Semiconductor science and technology. 2013, Vol 28, Num 8, issn 0268-1242, 085014.1-085014.7Article

Enhancement of the spin conductance of a spin filterKIM, J; KIM, H; KIM, N et al.Semiconductor science and technology. 2013, Vol 28, Num 2, issn 0268-1242, 025014.1-025014.4Article

Epitaxial growth of sexi-thiophene and para-hexaphenyl and its implications for the fabrication of self-assembled lasing nano-fibresSIMBRUNNER, Clemens.Semiconductor science and technology. 2013, Vol 28, Num 5, issn 0268-1242, 053001.1-053001.31Article

Experimental demonstration of a 16-channel DFB laser array based on nanoimprint technologyJIANYI ZHAO; XIN CHEN; NING ZHOU et al.Semiconductor science and technology. 2013, Vol 28, Num 5, issn 0268-1242, 055015.1-055015.6Article

Graphene oxide-based flexible metal―insulator―metal capacitorsBAG, A; HOTA, M. K; MALLIK, S et al.Semiconductor science and technology. 2013, Vol 28, Num 5, issn 0268-1242, 055002.1-055002.7Article

Hot wall epitaxy of Sb2Te3 layers: coherent hetero-epitaxy on InAs(111) and Sb substitution in Cu-mediated growthTAKAGAKI, Y; JENICHEN, B; JAHN, U et al.Semiconductor science and technology. 2013, Vol 28, Num 2, issn 0268-1242, 025012.1-025012.7Article

Investigation of device geometry- and temperature-dependent characteristics of AlGaN/GaN lateral field-effect rectifierWANJUN CHEN; JING ZHANG; ZHIGANG WANG et al.Semiconductor science and technology. 2013, Vol 28, Num 1, issn 0268-1242, 015021.1-015021.5Article

Photolithography-free fabrication of organic light-emitting diodes for lighting applicationsSEO, I. H; PARK, J. W; SHIN, D. C et al.Semiconductor science and technology. 2013, Vol 28, Num 2, issn 0268-1242, 025008.1-025008.5Article

Plasmon-controlled optimum gate bias for GaN heterostructure field-effect transistorsSIMUKOVIC, A; MATULIONIS, A; LIBERIS, J et al.Semiconductor science and technology. 2013, Vol 28, Num 5, issn 0268-1242, 055008.1-055008.5Article

Scanning infrared microscopy study of thermal processing induced defects in low resistivity Si wafersXINPENG ZHANG; XIANGYANG MA; DEREN YANG et al.Semiconductor science and technology. 2013, Vol 28, Num 8, issn 0268-1242, 085013.1-085013.8Article

Self-assembled homojunction In2O3 transparent thin-film transistorsGHERENDI, Florin; NISTOR, Magdalena; ANTOHE, Stefan et al.Semiconductor science and technology. 2013, Vol 28, Num 8, issn 0268-1242, 085002.1-085002.5Article

Simulation of thermal management in AlGaN/GaN HEMTs with integrated diamond heat spreadersWANG, A; TADJER, M. J; CALLE, F et al.Semiconductor science and technology. 2013, Vol 28, Num 5, issn 0268-1242, 055010.1-055010.8Article

Structural and electrical anisotropies of Si-doped a-plane (11―20) GaN films with different SiNx interlayersJI HOON KIM; HWANG, Sung-Min; YONG GON SEO et al.Semiconductor science and technology. 2013, Vol 28, Num 8, issn 0268-1242, 085007.1-085007.8Article

Structural and morphological studies on wet-etched InAlGaN barrier HEMT structuresBRAZZINI, T; TADJER, M. J; GACEVIC, Z et al.Semiconductor science and technology. 2013, Vol 28, Num 5, issn 0268-1242, 055007.1-055007.6Article

The GaAs scene in 1962: the battle with SiHILSUM, Cyril.Semiconductor science and technology. 2013, Vol 28, Num 1, issn 0268-1242, 015028.1-015028.4Article

The effect of interface state continuum on the impedance spectroscopy of semiconductor heterojunctionsBRUS, V. V.Semiconductor science and technology. 2013, Vol 28, Num 2, issn 0268-1242, 025013.1-025013.6Article

Theoretical study of the maximum power point of n-type and p-type crystalline silicon space solar cellsCAPPELLETTI, M. A; CASAS, G. A; CEDOLA, A. P et al.Semiconductor science and technology. 2013, Vol 28, Num 4, issn 0268-1242, 045010.1-045010.7Article

Thermoelectric transport and Hall measurements of low defect Sb2Te3 thin films grown by atomic layer depositionZASTROW, S; GOOTH, J; BOEHNERT, T et al.Semiconductor science and technology. 2013, Vol 28, Num 3, issn 0268-1242, 035010.1-035010.6Article

Wafer-scale processing technology for monolithically integrated GaSb thermophotovoltaic device array on semi-insulating GaAs substrateKIM, Jung Min; DUTTA, Partha S; BROWN, Eric et al.Semiconductor science and technology. 2013, Vol 28, Num 6, issn 0268-1242, 065002.1-065002.7Article

Y-branch coupled DFB-lasers based on high-order Bragg gratings for wavelength stabilizationFRICKE, J; KLEHR, A; BROX, O et al.Semiconductor science and technology. 2013, Vol 28, Num 3, issn 0268-1242, 035009.1-035009.4Article

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