3.7 kV Vertical GaN PN DiodesKIZILYALLI, Isik C; EDWARDS, Andrew P; HUI NIE et al.IEEE electron device letters. 2014, Vol 35, Num 2, pp 247-249, issn 0741-3106, 3 p.Article

400-A (Pulsed) Vertical GaN p-n Diode With Breakdown Voltage of 700 VKIZILYALLI, Isik C; EDWARDS, Andrew P; HUI NIE et al.IEEE electron device letters. 2014, Vol 35, Num 6, pp 654-656, issn 0741-3106, 3 p.Article

600 V-18 A GaN Power MOS-HEMTs on 150 mm Si Substrates With Au-Free ElectrodesDEOK WON SEO; HONG GOO CHOI; TWYNAM, John et al.IEEE electron device letters. 2014, Vol 35, Num 4, pp 446-448, issn 0741-3106, 3 p.Article

A Monolithic, 500 °C Operational Amplifier in 4H-SiC Bipolar TechnologyHEDAYATI, Raheleh; LANNI, Luigia; RODRIGUEZ, Saul et al.IEEE electron device letters. 2014, Vol 35, Num 7, pp 693-695, issn 0741-3106, 3 p.Article

A New Gas Sensor Based on MOSFET Having a Horizontal Floating-GateKIM, Chang-Hee; CHO, In-Tak; SHIN, Jong-Min et al.IEEE electron device letters. 2014, Vol 35, Num 2, pp 265-267, issn 0741-3106, 3 p.Article

A Novel Barrier Controlled Tunnel FETHAO WANG; SHENG CHANG; YUE HU et al.IEEE electron device letters. 2014, Vol 35, Num 7, pp 798-800, issn 0741-3106, 3 p.Article

Analytical Theory for Extracting Specific Contact Resistances of Thick Samples From the Transmission Line MethodEIDELLOTH, Stefan; BRENDEL, Rolf.IEEE electron device letters. 2014, Vol 35, Num 1, pp 9-11, issn 0741-3106, 3 p.Article

Area and Thickness Scaling of Forming Voltage of Resistive Switching MemoriesAN CHEN.IEEE electron device letters. 2014, Vol 35, Num 1, pp 57-59, issn 0741-3106, 3 p.Article

Barrier Properties of CVD Mn Oxide Layer to Cu Diffusion for 3-D TSVLEE, Kang-Wook; HAO WANG; BEA, Ji-Cheol et al.IEEE electron device letters. 2014, Vol 35, Num 1, pp 114-116, issn 0741-3106, 3 p.Article

Body-Tied Germanium Tri-Gate Junctionless PMOSFET With In-Situ Boron Doped ChannelCHEN, Che-Wei; CHUNG, Cheng-Ting; TZENG, Ju-Yuan et al.IEEE electron device letters. 2014, Vol 35, Num 1, pp 12-14, issn 0741-3106, 3 p.Article

Built-in Effective Body-Bias Effect in Ultra-Thin-Body Hetero-Channel III-V-on-Insulator n-MOSFETsYU, Chang-Hung; PIN SU.IEEE electron device letters. 2014, Vol 35, Num 8, pp 823-825, issn 0741-3106, 3 p.Article

CMOS On-Chip Stable True-Random ID Generation Using Antenna EffectFANG TANG; CHEN, Denis G; BO WANG et al.IEEE electron device letters. 2014, Vol 35, Num 1, pp 54-56, issn 0741-3106, 3 p.Article

Classical Conditioning Mimicked in Junctionless IZO Electric-Double-Layer Thin-Film TransistorsCHANGJIN WAN; JUMEI ZHOU; YI SHI et al.IEEE electron device letters. 2014, Vol 35, Num 3, pp 414-416, issn 0741-3106, 3 p.Article

Configurable Logic Gates Using Polarity-Controlled Silicon Nanowire Gate-All-Around FETsDE MARCHI, Michele; JIAN ZHANG; FRACHE, Stefano et al.IEEE electron device letters. 2014, Vol 35, Num 8, pp 880-882, issn 0741-3106, 3 p.Article

Doping-Free Intrinsic Amorphous Silicon Thin-Film Solar Cell Having a Simple Structure of Glass/SnO₂/MoO₃/i-a-Si/LiF/AlYANG, Ji-Hwan; SANG JUNG KANG; YUNHO HONG et al.IEEE electron device letters. 2014, Vol 35, Num 1, pp 96-98, issn 0741-3106, 3 p.Article

Dual Ion Effect of the Lithium Silicate Resistance Random Access MemoryCHANG, Kuan-Chang; TSAI, Tsung-Ming; HUANG, Syuan-Yong et al.IEEE electron device letters. 2014, Vol 35, Num 5, pp 530-532, issn 0741-3106, 3 p.Article

ESD Protection Device With Dual-Polarity Conduction and High Blocking Voltage Realized in CMOS ProcessLUO, Sirui; SALCEDO, Javier A; HAJJAR, Jean-Jacques et al.IEEE electron device letters. 2014, Vol 35, Num 4, pp 437-439, issn 0741-3106, 3 p.Article

Effect of Temperature and Electric Field on Degradation in Amorphous InGaZnO TFTs Under Positive Gate and Drain Bias StressJONG IN KIM; CHO, In-Tak; JOE, Sung-Min et al.IEEE electron device letters. 2014, Vol 35, Num 4, pp 458-460, issn 0741-3106, 3 p.Article

Electrical Conductivity Discontinuity at Melt in Phase Change MemoryCRESPI, Luca; GHETTI, Andrea; BONIARDI, Mattia et al.IEEE electron device letters. 2014, Vol 35, Num 7, pp 747-749, issn 0741-3106, 3 p.Article

Enhanced Field Emission of TiO₂ Nanowires With UV IlluminationSIN HUI WANG; TSUNG YING TSAI; SHOOU JINN CHANG et al.IEEE electron device letters. 2014, Vol 35, Num 1, pp 123-125, issn 0741-3106, 3 p.Article

Flexible Neural Electrode Arrays With Switch-Matrix Based on a Planar Silicon ProcessFUJISHIRO, Akifumi; TAKAHASHI, Sou; SAWADA, Kazuaki et al.IEEE electron device letters. 2014, Vol 35, Num 2, pp 253-255, issn 0741-3106, 3 p.Article

Flexible Self-Aligned Double-Gate IGZO TFTMÜNZENRIEDER, Niko; VOSER, Pascal; PETTI, Luisa et al.IEEE electron device letters. 2014, Vol 35, Num 1, pp 69-71, issn 0741-3106, 3 p.Article

Generation of Optical Vortices by an Ideal Liquid Crystal Spiral Phase PlateALGORRI, José Francisco; URRUCHI, Virginia; GARCIA-CAMARA, Braulio et al.IEEE electron device letters. 2014, Vol 35, Num 8, pp 856-858, issn 0741-3106, 3 p.Article

HfO₂ Based High-k Inter-Gate Dielectrics for Planar NAND Flash MemoryBREUIL, Laurent; LISONI, Judit G; BLOMME, Pieter et al.IEEE electron device letters. 2014, Vol 35, Num 1, pp 45-47, issn 0741-3106, 3 p.Article

High Mobility Bilayer Metal―Oxide Thin Film Transistors Using Titanium-Doped InGaZnOHSU, Hsiao-Hsuan; CHANG, Chun-Yen; CHENG, Chun-Hu et al.IEEE electron device letters. 2014, Vol 35, Num 1, pp 87-89, issn 0741-3106, 3 p.Article