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NEW MICROMECHANICAL DISPLAY USING THIN METALLIC FILMSCADMAN MA; PERRET A; PORRET F et al.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 1; PP. 3-4; BIBL. 8 REF.Article

PROPER CHOICE OF THE MEASURING FREQUENCY FOR DETERMINING FR OF BIPOLAR TRANSISTORSREIN HM.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 1; PP. 75-82; BIBL. 5 REF.Article

1/F NOISE IN MODULATION-DOPED FIELD EFFECT TRANSISTORSDUH KH; VAN DER ZIEL A; MORKOC H et al.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 1; PP. 12-13; BIBL. 4 REF.Article

NOUVELLES ETUDES EXPERIMENTALES DU MECANISME DU BRUIT 1/FKOGAN SH M.1977; USP. FIZ. NAUK; S.S.S.R.; DA. 1977; VOL. 123; NO 1; PP. 131-136; BIBL. 14 REF.Article

PRESENCE OF MOBILITY-FLUCTUATION 1/F NOISE IDENTIFIED IN SILICON P+NP TRANSISTORSKILMER J; VAN DER ZIEL A; BOSMAN G et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 1; PP. 71-74; BIBL. 10 REF.Article

LOW-FREQUENCY NOISE CHARACTERISTICS OF PB-SALT SEMICONDUCTOR LASERSENG RS; MANTZ AW; TOOO TR et al.1979; APPL. OPT.; USA; DA. 1979; VOL. 18; NO 7; PP. 1088-1091; BIBL. 6 REF.Article

1/F NOISE IN HEMT-TYPE GAAS FETS AT LOW DRAIN BIASVAN DER ZIEL A.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 5; PP. 385-386; BIBL. 2 REF.Article

RELIABILITY OF N-CHANNEL AND P-CHANNEL MOSTS IN CMOS INTEGRATED CIRCUITSSTOJADINOVIC N; DIMITRIJEV S; MIJALKOVIC S et al.1983; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1983; VOL. 76; NO 1; PP. 357-364; ABS. RUS; BIBL. 14 REF.Article

ORIGIN OF 1/F NOISE IN BIPOLAR TRANSISTORSSTOISIEK M; WOLF D.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 9; PP. 1753-1757; BIBL. 7 REF.Article

EXPERIMENTAL STUDIES ON 1/F NOISEHOOGE FN; KLEINPENNING TGM; VANDAMME LKJ et al.1981; REP. PROG. PHYS.; ISSN 0034-4885; GBR; DA. 1981; VOL. 44; NO 5; PP. 479-532; BIBL. 2 P.Article

OBSERVATIONAL CHARACTERISTICS OF TERRESTRIAL KILOMETRIC RADIATIONKAISER ML; ALEXANDER JK.1978; J. GEOMAGN. GEOELECTR.; JPN; DA. 1978; VOL. 30; NO 3; PP. 289-290; BIBL. 6 REF.Article

Diameter dependence of 1/f noise in carbon nanotube field effect transistors using noise spectroscopyKAWAHARA, Toshio; YAMAGUCHI, Satarou; OHNO, Yasuhide et al.Applied surface science. 2013, Vol 267, pp 101-105, issn 0169-4332, 5 p.Article

RESPONSE OF A CORRELATED DOUBLE SAMPLING CIRCUIT TO 1/F NOISEKANSY RJ.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 3; PP. 373-375; BIBL. 5 REF.Article

MEASUREMENT OF 1/F NOISE USING A CONTACT-FREE CURRENT-DRIVING SCHEMEHASHIGUSHI S; SUZUKI Y.1982; IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT; ISSN 0018-9456; USA; DA. 1982; VOL. 31; NO 3; PP. 210-212; BIBL. 4 REF.Article

MOBILITY-FLUCTUATION 1/F NOISE IN NONUNIFORM NONLINEAR SAMPLES AND IN MESA STRUCTURESVAN DER ZIEL A; VAN VLIET CM.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 72; NO 1; PP. K53-K55; BIBL. 4 REF.Article

EFFECTS OF EMITTER EDGE DISLOCATIONS ON THE LOW-FREQUENCY NOISE OF SILICON PLANAR N-P-N TRANSISTORSSTOJADINOVIC ND.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 12; PP. 340-342; BIBL. 13 REF.Article

DEVIATION OF 1/F VOLTAGE FLUCTUATION FROM SCALE SIMILAR GAUSSIAN BEHAVIORNELKIN M; TREMBLAY AMS.1981; J. STAT. PHYS.; ISSN 0022-4715; USA; DA. 1981; VOL. 25; NO 2; PP. 253-268; BIBL. 19 REF.Article

RELATIONS BETWEEN GEOMETRICAL FACTORS FOR NOISE MAGNITUDES IN RESISTORSWEISSMAN MB.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 11; PP. 5872-5875; BIBL. 16 REF.Article

L/F-RAUSCHEN AN KONTAKTEN = LE BRUIT EN L/F DES CONTACTSGRAF S.1978; WISSENSCH. Z. TECH. HOCHSCH. KARL-MARX-STADT; DDR; DA. 1978; VOL. 20; NO 7; PP. 907-911; BIBL. 8 REF.Article

FLUCTUATIONS BASSES FREQUENCES DES OSCILLATIONS DANS UN MONOTRON CRMERGAKOV VS; SHAPOSNIKOV AA.1977; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOFIZ.; S.S.S.R.; DA. 1977; VOL. 20; NO 8; PP. 1209-1217; ABS. ANGL.; BIBL. 5 REF.Article

SURFACE FLICKER NOISE IN P-I DIODES.SHARMA YK.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 34; NO 1; PP. K87-K89; BIBL. 4 REF.Article

CALCULATIONS OF EXPERIMENTAL IMPLICATIONS OF TENSOR PROPERTIES OF RESISTANCE FLUCTUATIONSWEISSMAN MB; BLACK RD; SNOW WM et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 9; PP. 6276-6279; BIBL. 6 REF.Article

EFFECTS OF PHOSPHORUS GETTERING ON 1/F NOISE IN BIPOLAR TRANSISTORSSTOISIEK M; WOLF D.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 11; PP. 1147-1149; BIBL. 4 REF.Article

ON THE SUPERPOSITION OF RELAXATION SPECTRA AS AN EXPLANATION FOR 1/F NOISEWALMA AA.1980; REV. PHYS. APPL.; ISSN 0035-1687; FRA; DA. 1980; VOL. 15; NO 9; PP. 1435-1443; ABS. FRE; BIBL. 17 REF.Article

ON LOW-FREQUENCY NOISE IN TUNNEL DIODESKLEINPENNING TGM.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 7; PP. 927-931; BIBL. 15 REF.Article

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