kw.\*:("1\/f noise")
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The quantum 1/f effect and the general nature of 1/f noiseHANDEL, P. H.AEU. Archiv für Elektronik und Übertragungstechnik. 1989, Vol 43, Num 5, pp 261-270, issn 0001-1096, 10 p.Article
On 1/f noise and detectivity in reverse-biased pn-junction photodiodesKLEINPENNING, T. G. M.Physica, B + C. 1983, Vol 121, Num 1-2, pp 81-88, issn 0378-4363Article
Low-frequency noise controls on-off intermittency of bifurcating systemsAUMAITRE, Sébastien; PETRELIS, Francois; MALLICK, Kirone et al.Physical review letters. 2005, Vol 95, Num 6, pp 064101.1-064101.4, issn 0031-9007Article
Giant 1/f noise in two-dimensional polycrystalline mediaSNARSKII, A; BEZSUDNOV, I.Physica. B, Condensed matter. 2008, Vol 403, Num 19-20, pp 3519-3521, issn 0921-4526, 3 p.Article
Thermally Modulated Flux Concentrator for Minimizing 1/f Noise in Magnetoresistance -Based Field SensorsWEIZHONG WANG; ZHENYE JIANG.IEEE transactions on magnetics. 2008, Vol 44, Num 11, pp 4003-4006, issn 0018-9464, 4 p., 2Conference Paper
Dynamical suppression of 1/f noise processes in qubit systemsFAORO, Lara; VIOLA, Lorenza.Physical review letters. 2004, Vol 92, Num 11, pp 117905.1-117905.4, issn 0031-9007Article
Fluctuation theory of 1/f noise in disordered conductorsBONDAREV, V. N; PIKHITSA, P. V.Journal of physics. Condensed matter (Print). 1998, Vol 10, Num 30, pp 6735-6747, issn 0953-8984Article
Flicker noise in MOSFETs with gate-voltage-dependent mobilityDUH, K. H; VAN DER ZIEL, A.Solid-state electronics. 1984, Vol 27, Num 5, pp 459-461, issn 0038-1101Article
Low-frequency noise in permeable base transistorsZHU, X. C; VAN DER ZIEL, A; BOZLER, C. O et al.I.E.E.E. transactions on electron devices. 1984, Vol 31, Num 10, pp 1408-1413, issn 0018-9383Article
Design and Validation of High-Efficiency Chopper for Magnetoresistive SensorsDUAN, H; GUPTA, A; LI, Y et al.IEEE transactions on magnetics. 2012, Vol 48, Num 9, pp 2461-2466, issn 0018-9464, 6 p.Article
On surface 1/f noise in bipolar transistorsZHUANG YI-QI; SUN QING.Chinese physics. 1988, Vol 8, Num 4, pp 1085-1096, issn 0273-429XArticle
Large Area and Low Aspect Ratio Linear Magnetic Tunnel Junctions With a Soft-Pinned Sensing LayerFERREIRA, R; PAZ, E; FREITAS, P. P et al.IEEE transactions on magnetics. 2012, Vol 48, Num 11, pp 3719-3722, issn 0018-9464, 4 p.Conference Paper
Elaboration d'oscillateurs faibles bruits à transistors bipolairesLUCHININ, A. S.Izvestiâ vysših učebnyh zavedenij. Radioelektronika. 1987, Vol 30, Num 3, pp 3-8, issn 0021-3470Article
Modified 1/f trapping noise theory and experiments in MOS transistors biased from weak to strong inversion ― influence of interface statesREIMBOLD, G.I.E.E.E. transactions on electron devices. 1984, Vol 31, Num 9, pp 1190-1198, issn 0018-9383Article
A procedure for the assessment of low frequency noise complaintsaMOORHOUSE, Andy T; WADDINGTON, David C; ADAMS, Mags D et al.The Journal of the Acoustical Society of America. 2009, Vol 126, Num 3, pp 1131-1141, issn 0001-4966, 11 p.Article
Fractal dimension of 1/fα noisesVATERKOWSKI, J. L; ROQUES-CARMES, C; GAGNEPAIN, J. J et al.Electronics Letters. 1985, Vol 21, Num 16, pp 688-690, issn 0013-5194Article
1/f noise spectrum on self-similar cascade of bifurcation processesFURUKAWA, H.Physics letters. A. 1985, Vol 110, Num 6, pp 316-318, issn 0375-9601Article
1/f, g-r and burst noise induced by emitter-edge dislocations in bipolar transistorsMIHAILA, M; AMBERIADIS, K; VAN DER ZIEL, A et al.Solid-state electronics. 1984, Vol 27, Num 7, pp 675-676, issn 0038-1101Article
1/f noise in positive temperature coefficient thermistorsRALPH, J. E; SCHOFIELD, J. M. S.Physica, B + C. 1982, Vol 115, Num 1, pp 35-40, issn 0378-4363Article
NEW MICROMECHANICAL DISPLAY USING THIN METALLIC FILMSCADMAN MA; PERRET A; PORRET F et al.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 1; PP. 3-4; BIBL. 8 REF.Article
1/f Noise in Advanced CMOSTransistorsNEMIROVSKY, Yael; CORCOS, Dan; BROUK, Igor et al.IEEE instrumentation & measurement magazine. 2011, Vol 14, Num 1, pp 14-22, issn 1094-6969, 9 p.Article
Correlation between destruction of the metal surface caused by pitting corrosion and intensity of the observed electrochemical noiseSMULKO, J. M; ZIELINSKI, A; DAROWICKI, K et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 57-62, issn 0277-786X, isbn 0-8194-5841-4, 1Vol, 6 p.Conference Paper
Current induced noise in CPP spin valvesZHU, Jian-Gang; NAYOUNG KIM; YUCHEN ZHOU et al.IEEE transactions on magnetics. 2004, Vol 40, Num 4, pp 2323-2325, issn 0018-9464, 3 p., 2Conference Paper
Mobility fluctuation 1/f noise in silicon p+-n-p transistorsKILMER, J; VAN DER ZIEL, A; BOSMAN, G et al.Solid-state electronics. 1985, Vol 28, Num 3, pp 287-288, issn 0038-1101Article
Temperature dependence of the 1/f noise of carbon resistorsFLEETWOOD, D. M; POSTEL, T; GIORDANO, N et al.Journal of applied physics. 1984, Vol 56, Num 11, pp 3256-3260, issn 0021-8979Article