Design of low-noise CMOS transimpedance amplifierJOON HUANG CHUAH; HOLBURN, David.Microelectronics international. 2013, Vol 30, Num 3, pp 115-124, issn 1356-5362, 10 p.Article

Microwave studies by perturbation of Ag thick film microstrip ring resonator using superstrate of bismuth strontium manganitesMATHAD, S. N; JADHAV, R. N; PURI, Vijaya et al.Microelectronics international. 2013, Vol 30, Num 2, pp 85-91, issn 1356-5362, 7 p.Article

Non-destructive quantitative phase analysis of an LTCC materialMAKAROVIC, Kostja; MEDEN, Anton; HROVAT, Marko et al.Microelectronics international. 2013, Vol 30, Num 2, pp 73-76, issn 1356-5362, 4 p.Article

Potentiality of polysilicon nanogap structure for label-free biomolecular detectionDHAHI, T. S; HASHIM, U; ALI, M. E et al.Microelectronics international. 2013, Vol 30, Num 2, pp 68-72, issn 1356-5362, 5 p.Article

Superior performance and reliability of copper wire ball bonding in laminate substrate based ball grid arrayCHONG LEONG GAN; CLASSE, Francis; HASHIM, Uda et al.Microelectronics international. 2013, Vol 30, Num 3, pp 169-175, issn 1356-5362, 7 p.Article

Analysis of dark current dependent upon threading dislocations in Ge/Si heterojunction photodetectorsYING WEI; XUEYUAN CAI; JINZHI RAN et al.Microelectronics international. 2012, Vol 29, Num 3, pp 136-140, issn 1356-5362, 5 p.Article

Finite element modeling of channel sag in LTCCHORVATH, Eszter; HENAP, Gabor; HARSANYI, Gabor et al.Microelectronics international. 2012, Vol 29, Num 3, pp 145-152, issn 1356-5362, 8 p.Article

Optimal placement of modules on partially reconfigurable device for reconfiguration time improvementOUNI, Bouraoui; MTIBAA, Abdellatif.Microelectronics international. 2012, Vol 29, Num 2, pp 101-107, issn 1356-5362, 7 p.Article

Study of I-V characteristics of ZnO film on Si substrate with Ag buffer layer by C-AFMYIDONG ZHANG; WEIWEI HE.Microelectronics international. 2012, Vol 29, Num 1, pp 35-39, issn 1356-5362, 5 p.Article

A sequential triggering technique in cascaded current source for low power 12-b D/A converterCUI, Zhi-Yuan; CHOI, Ho-Yong; CHO, Tae-Won et al.Microelectronics international. 2011, Vol 28, Num 1, pp 4-7, issn 1356-5362, 4 p.Article

Design study for a capacitive ceramic pressure sensorSANTO ZARNIK, Marina; BELAVIC, Darko; MACEK, Srečko et al.Microelectronics international. 2011, Vol 28, Num 3, pp 31-35, issn 1356-5362, 5 p.Article

Testing on dynamic behavior of PBGA assembly by considering fixed-modesPING YANG; ZIXIA CHEN.Microelectronics international. 2011, Vol 28, Num 2, pp 23-29, issn 1356-5362, 7 p.Article

X-ray diffraction studies of Al_xGa_1―xN (0 ≤ x ≤ 1) ternary alloys grown on sapphire substrateNG SHA SHIONG; CHING CHIN GUAN; HASSAN, Zainuriah et al.Microelectronics international. 2011, Vol 28, Num 2, pp 44-48, issn 1356-5362, 5 p.Article

Electrothermal modeling of hybrid power modulesAYADI, Moez; MOHAMED AMINE FAKHFAKH; GHARIANI, Moez et al.Microelectronics international. 2010, Vol 27, Num 3, pp 170-177, issn 1356-5362, 8 p.Article

High photoluminescence of silicon nanostructures synthesized by laser-induced etchingRAMIZY, Asmiet; OMAR, Khalid; HASSAN, Z et al.Microelectronics international. 2010, Vol 27, Num 1, pp 45-48, issn 1356-5362, 4 p.Article

New CMOS potentiostat as ASIC for several electrochemical microsensors constructionFUJCIK, Lukas; PROKOP, Roman; PRASEK, Jan et al.Microelectronics international. 2010, Vol 27, Num 1, pp 3-10, issn 1356-5362, 8 p.Article

Study of Ge embedded inside porous silicon for potential MSM photodetectorABD RAHIM, A. F; HASHIM, M. R; ALI, N. K et al.Microelectronics international. 2010, Vol 27, Num 3, pp 154-158, issn 1356-5362, 5 p.Article

The effect of porosity on the properties of silicon solar cellRAMIZY, Asmiet; AZIZ, Wisam J; HASSAN, Z et al.Microelectronics international. 2010, Vol 27, Num 2, pp 117-120, issn 1356-5362, 4 p.Article

Comparison between models for p-n junctions parameters extractionPESENTI, G. C; BOUDINOV, H.Microelectronics international. 2009, Vol 26, Num 2, pp 37-40, issn 1356-5362, 4 p.Article

FPGA placement by using Hopfield neural networkKOS, Andrzej; NAGORNY, Zbigniew.Microelectronics international. 2009, Vol 26, Num 1, pp 22-32, issn 1356-5362, 11 p.Article

A highly miniaturized wireless inertial sensor using a novel 3D flexible circuitBUCKLEY, J; O'FLYNN, B; BARTON, J et al.Microelectronics international. 2009, Vol 26, Num 3, pp 9-21, issn 1356-5362, 13 p.Article

Application of a low-glitch current cell in 10-bit CMOS current-steering DACCUI, Zhi-Yuan; CHOI, Joong-Ho; KIM, Yeong-Seuk et al.Microelectronics international. 2009, Vol 26, Num 3, pp 35-40, issn 1356-5362, 6 p.Article

Response of Ag thick film microstrip equilateral triangular patch antenna to overlay of moisture laden soybeanMANE, Vaishali; PURI, Vijaya.Microelectronics international. 2009, Vol 26, Num 3, pp 56-59, issn 1356-5362, 4 p.Article

Geometrical, electrical and stability properties of thick-film and LTCC microcapacitorsMIS, Edward; DZIEDZIC, Andrzej; PIASECKI, Tomasz et al.Microelectronics international. 2008, Vol 25, Num 2, pp 37-41, issn 1356-5362, 5 p.Article

Prediction of microwave permittivity of leafy vegetation using Ag thick film microstriplineKAMBLE, P. D; PURI, Vijaya.Microelectronics international. 2008, Vol 25, Num 3, pp 37-40, issn 1356-5362, 4 p.Article