An attempt to synthesize 850-900 nm SCH laser diodes by low temperature liquid phase epitaxyCHANDVANKAR, S. S; SHAH, A. P; BHATTACHARYA, A et al.SPIE proceedings series. 2002, pp 1030-1033, isbn 0-8194-4500-2, 2VolConference Paper

Double-locked semiconductor laser for radio-over-fiber uplink transmissionCUICUI CUI; XUELEI FU; CHAN, Sze-Chun et al.Optics letters. 2009, Vol 34, Num 24, pp 3821-3823, issn 0146-9592, 3 p.Article

Semiconductor lasers and laser dynamics II (3-6 April, 2006, Strasbourg, France)Lenstra, Daan; Pessa, M; White, Ian H et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, issn 0277-786X, isbn 0-8194-6240-3, 1Vol, various pagings, isbn 0-8194-6240-3Conference Proceedings

Gain coupling of class A semiconductor lasersHESSENIUS, Chris; TERRY, Nathan; FALLAHI, Mahmoud et al.Optics letters. 2010, Vol 35, Num 18, pp 3060-3062, issn 0146-9592, 3 p.Article

Power-scalable 1.57 μm mode-locked semiconductor disk laser using wafer fusionSAARINEN, Esa J; PUUSTINEN, Janne; SIRBU, Alexei et al.Optics letters. 2009, Vol 34, Num 20, pp 3139-3141, issn 0146-9592, 3 p.Article

Novel in-plane semiconductor lasers X (25-28 January 2011, San Francisco CA)Belyanin, Alexey A; Smowton, Peter M.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7953, issn 0277-786X, isbn 978-0-8194-8490-1, 1 vol, isbn 978-0-8194-8490-1Conference Proceedings

Quantum DotsBOROVITSKAYA, Elena; SHUR, Michael S.International journal of high speed electronics and systems. 2002, Vol 12, Num 1, 206 p.Serial Issue

Room temperature λ ~ 3.3 μm InP-based InGaAs/AlAs(Sb) quantum cascade lasersZHANG, S. Y; REVIN, D. G; COMMIN, J. P et al.Electronics letters. 2010, Vol 46, Num 6, pp 439-440, issn 0013-5194, 2 p.Article

Application of semiconductor laser on big dimension measuring systemZHANG HONGTAO; ZHAI XUHUA; QU ZHOU et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7656, issn 0277-786X, isbn 978-0-8194-8086-6, 765623.1-765623.5, 3Conference Paper

Analysis of facet heating in semiconductor lasersWAWER, D; OCHALSKI, T. J; PIERSCINSKI, K et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 70090C.1-70090C.7, issn 0277-786X, isbn 978-0-8194-7219-9, 1VolConference Paper

Limits on efficiency and power scaling in semiconductor disk lasers with diamond heatspreaders : Plasmonics and MetamaterialsMACLEAN, A. J; BIRCH, R. B; ROTH, P. W et al.Journal of the Optical Society of America. B, Optical physics (Print). 2009, Vol 26, Num 12, pp 2228-2236, issn 0740-3224, 9 p.Article

Tunable InAs quantum-dot lasers grown on (100) InPALLEN, C. Ni; POOLE, P. J; MARSHALL, P et al.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 415-417, issn 0959-8324, 3 p.Conference Paper

Novel in-plane semiconductor lasers V (23-26 January 2006, San Jose, California, USA)Mermelstein, Carmen; Bour, David P.Proceedings of SPIE, the International Society for Optical Engineering. 2006, issn 0277-786X, isbn 0-8194-6175-X, 1Vol, pagination multiple, isbn 0-8194-6175-XConference Proceedings

Semiconductor lasers and applications IV (18-19 October 2010, Beijing, China)Zhu, Ning-Hua.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7844, issn 0277-786X, isbn 978-0-8194-8374-4, 1 vol, isbn 978-0-8194-8374-4Conference Proceedings

High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wellsKOVSH, A. R; ZHUKOV, A. E; ALFEROV, Zh. I et al.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 491-493, issn 0959-8324, 3 p.Conference Paper

40 Gbit/s Directly Modulated Lasers: Physics and ApplicationTROPPENZ, U; KREISSL, J; MÖHRLE, M et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7953, issn 0277-786X, isbn 978-0-8194-8490-1, 79530F.1-79530F.10Conference Paper

The Contribution of Cu²⁺, Fe²⁺, Fe³⁺ to Bluish Green Color of HuBei TurquoiseGUOYING; JINLILI; SUNHONGJUAN et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7844, issn 0277-786X, isbn 978-0-8194-8374-4, 784412.1-784412.9Conference Paper

Les débuts des lasers à semiconducteurs - Histoire de Laser Conditions in SemiconductorsBERNARD, Maurice.REE. Revue de l'électricité et de l'électronique. 2009, Num 3, pp 88-96, issn 1265-6534, 9 p.Article

Continuous-wave single-frequency 295 nm laser source by a frequency-quadrupled optically pumped semiconductor laserKANEDA, Yushi; FALLAHI, Mahmoud; HADER, Jörg et al.Optics letters. 2009, Vol 34, Num 22, pp 3511-3513, issn 0146-9592, 3 p.Article

Relative intensity noise of an injected semiconductor laserPOETTE, J; VAUDEL, O; BESNARD, P et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 605407.1-605407.10, issn 0277-786X, isbn 0-8194-6090-7, 1VolConference Paper

Incorporation of carrier capture and escape processes into a self-consistent cw model for Quantum Well lasersBORRUEL, L; ARIAS, J; ROMERO, B et al.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 675-677, issn 0959-8324, 3 p.Conference Paper

Experimental observation of the Locking regimes and Chaotic Dynamics in Laterally Coupled Diode LasersLAMELA, H; SANTOS, R.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7597, issn 0277-786X, isbn 978-0-8194-7993-8 0-8194-7993-4, 1Vol, 75971M.1-75971M.7Conference Paper

Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/sBLOKHIN, S. A; LOTT, J. A; MUTIG, A et al.Electronics letters. 2009, Vol 45, Num 10, pp 501-503, issn 0013-5194, 3 p.Article

Calculation of the spontaneous emission spatial dependency in semiconductor laser using transmission line modelRAZAGHI, Mohammad; AHMADI, Vahid; BEHRANG HADIAN SIHAKAL MAHALLEH et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 700904A.1-700904A.4, issn 0277-786X, isbn 978-0-8194-7219-9, 1VolConference Paper

Lu2O3 :Yb3+ ceramics: a novel gain material for high-power solid-state lasersTAKAICHI, K; YAGI, H; SHIRAKAWA, A et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 1, pp R1-R3, issn 0031-8965Article