Dynamic drag of edge dislocation by circular prismatic loops and point defectsMALASHENKO, V. V.Physica. B, Condensed matter. 2009, Vol 404, Num 21, pp 3890-3893, issn 0921-4526, 4 p.Article

On the case of the negative activation volumes of defects in solidsZARDAS, G. E; SYMEONIDES, Ch. I.Physica. B, Condensed matter. 2009, Vol 404, Num 8-11, pp 1394-1397, issn 0921-4526, 4 p.Article

Molecular dynamics simulation of optimized shearing routes in single- and polycrystalline aluminumZAHN, Dirk.Computational materials science. 2009, Vol 45, Num 4, pp 845-848, issn 0927-0256, 4 p.Article

First-principles study on electronic structure and absorption spectra for the CaWO₄ crystal with oxygen vacancyZEXU SHAO; QIREN ZHANG; TINGYU LIU et al.Computational materials science. 2008, Vol 43, Num 4, pp 1018-1021, issn 0927-0256, 4 p.Article

Study on the optical polarized properties for the PbWO₄ crystal with raspite structuresLIU TINGYU; ZHANG QIREN; ZHUANG SONGLIN et al.Optical materials (Amsterdam). 2007, Vol 29, Num 8, pp 1044-1047, issn 0925-3467, 4 p.Article

Behavior of 3d-transition metals in different SiC polytypesJUSTO, J. F; MACHADO, W. V. M; ASSALI, L. V. C et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 378-381, issn 0921-4526, 4 p.Conference Paper

EL2 model based on indications of an intermediate metastable stateFAVERO, P. P; CRUZ, J. M. R.Physica. B, Condensed matter. 2006, Vol 376-77, pp 575-578, issn 0921-4526, 4 p.Conference Paper

Simulation of point defect diffusion in germaniumLAUWAERT, J; HENS, S; SPIEWAK, P et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 257-261, issn 0921-4526, 5 p.Conference Paper

Theory of anharmonicity on bond-centered hydrogen oscillators in siliconCOUTINHO, J; TORRES, V. J. B; PEREIRA, R. N et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 126-129, issn 0921-4526, 4 p.Conference Paper

In situ diffraction profile analysis during tensile deformation motivated by molecular dynamicsVAN SWYGENHOVEN, H; BUDROVIC, Z; DERLET, P. M et al.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2005, Vol 400-01, pp 329-333, issn 0921-5093, 5 p.Conference Paper

An ionic model for the (+/-) pinning level of hydrogen and muonium in semiconductorsCOX, S. F. J.Physica. B, Condensed matter. 2003, Vol 340-42, pp 250-253, issn 0921-4526, 4 p.Conference Paper

Bipolar structure of carrier concentration in hydrogen pre-annealing Czochralski silicon waferXUEGONG YU; DEREN YANG; RUIXIN FAN et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 601-604, issn 0921-4526, 4 p.Conference Paper

Shallow donors in diamond: pnictogen and chalcogen hydrogen defectsSQUE, S. J; JONES, R; GOSS, J. P et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 80-83, issn 0921-4526, 4 p.Conference Paper

Additional evidence for the interconnection of the conductivity activation energy with bulk properties in multiphased alkali halide mixed crystalsKATSIKA-TSIGOURAKOU, Vassiliki; SYMEONIDIS, Chrysoleon.Physica. B, Condensed matter. 2009, Vol 404, Num 8-11, pp 1079-1081, issn 0921-4526, 3 p.Article

Local modes of vibration at the vacancy and vacancy models of defects in diamondLOWTHER, J. E.Computational materials science. 2009, Vol 46, Num 2, pp 520-523, issn 0927-0256, 4 p.Article

Modeling of dislocation patterns of small- and high-angle grain boundaries in aluminumZAHN, Dirk; TLATLIK, Harald; RAABE, Dierk et al.Computational materials science. 2009, Vol 46, Num 2, pp 293-296, issn 0927-0256, 4 p.Article

Trends on 3d transition metal impurities in diamondASSALI, L. V. C; MACHADO, W. V. M; JUSTO, J. F et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4515-4517, issn 0921-4526, 3 p.Conference Paper

Point defect simulations by finite cluster methodKADOLKAR, Charudatt Y; SAHARIAH, Munima B.Computational materials science. 2008, Vol 44, Num 2, pp 443-448, issn 0927-0256, 6 p.Article

Simulation study of the defect models of Cr-doped PbWO₄ crystal and Cr, La-co-doped PbWO₄ crystalRANGMIAN XIE; QIREN ZHANG.Journal of alloys and compounds. 2007, Vol 439, Num 1-2, pp 326-329, issn 0925-8388, 4 p.Article

Identification of stable and metastable forms of VO₂ centers in germaniumCARVALHO, A; TORRES, V. J. B; MARKEVICH, V. P et al.Physica. B, Condensed matter. 2007, Vol 401-02, pp 192-195, issn 0921-4526, 4 p.Conference Paper

Positron study of electron irradiation-induced vacancy defects in SiCKAWASUSO, A; YOSHIKAWA, M; ITOH, H et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 350-353, issn 0921-4526, 4 p.Conference Paper

Process-induced transfer pattern in Si epitaxy using pocket susceptorWANG, Tien Y.Journal of crystal growth. 2005, Vol 276, Num 3-4, pp 354-361, issn 0022-0248, 8 p.Article

Density-functional theory calculations on H defects in SiMARTSINOVICH, N; ROSA, A. L; HEGGIE, M. I et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 654-658, issn 0921-4526, 5 p.Conference Paper

Mn doping concentration dependent p-d hybridization in Ga_1-xMn_xNDAN WANG; XINYI ZHANG; JIE WANG et al.Solid state communications. 2009, Vol 149, Num 5-6, pp 192-195, issn 0038-1098, 4 p.Article

Electronic and structural properties of Li-Al co-doped MgB₂BERNARDINI, Fabio; MONNI, Marco; SANNA, Antonio et al.Physica. C. Superconductivity. 2007, Vol 460-462, Num 1, pp 566-567, issn 0921-4534, 2 p.Conference Paper