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Results 1 to 25 of 147

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Status of the pulsed low energy positron beam system (PLEPS) at the Munich Research Reactor FRM-IISPERR, P; EGGER, W; KÖGEL, G et al.Applied surface science. 2008, Vol 255, Num 1, pp 35-38, issn 0169-4332, 4 p.Article

Stacking fault disorder and its diffraction consequences in Ba3MNb2O9 (M = Co and Mn) 1:2 triple perovskitesYUN LIU; WITHERS, Ray L; TING, Valeska et al.Physica. B, Condensed matter. 2006, Vol 385-86, pp 564-566, issn 0921-4526, 3 p., 1Conference Paper

Local electronic edge states of graphene layer deposited on Ir(1 1 1) surface studied by STM/CITSKLUSEK, Z; KOZLOWSKI, W; WAQAR, Z et al.Applied surface science. 2005, Vol 252, Num 5, pp 1221-1227, issn 0169-4332, 7 p.Article

Modified growth of Ge quantum dots using C2H4 mediation by ultra-high vacuum chemical vapor depositionLEE, S. W; CHEN, P. S; CHENG, S. L et al.Applied surface science. 2008, Vol 254, Num 19, pp 6261-6264, issn 0169-4332, 4 p.Conference Paper

Scanning tunneling microscopy and spectroscopy studies of graphite edgesNIIMI, Y; MATSUI, T; KAMBARA, H et al.Applied surface science. 2005, Vol 241, Num 1-2, pp 43-48, issn 0169-4332, 6 p.Conference Paper

Classification of stacking faults and dislocations observed in nonpolar a-plane GaN epilayers using transmission electron microscopyBO HYUN KONG; QIAN SUN; JUNG HAN et al.Applied surface science. 2012, Vol 258, Num 7, pp 2522-2528, issn 0169-4332, 7 p.Article

Systematic studies of Si and Ge hemispherical concave wafers prepared by plastic deformationNAKAJIMA, Kazuo; FUJIWARA, Kozo; MORISHITA, Kohei et al.Journal of crystal growth. 2009, Vol 311, Num 21, pp 4587-4592, issn 0022-0248, 6 p.Article

Quantitative measurement of deformation field around low-angle grain boundaries by electron microscopyZHAO, C. W; XING, Y. M; BAI, P. C et al.Physica. B, Condensed matter. 2008, Vol 403, Num 10-11, pp 1838-1842, issn 0921-4526, 5 p.Article

A chromium-free etchant for delineation of defects in heavily doped n-type silicon wafersYUHENG ZENG; DEREN YANG; XIANGYANG MA et al.Materials science in semiconductor processing. 2008, Vol 11, Num 4, pp 131-136, issn 1369-8001, 6 p.Article

Revealing of planar defects and partial dislocations in large synthetic diamond crystals by the selective etchingKHOKHRYAKOV, Alexander F; PALYANOV, Yuri N.Journal of crystal growth. 2007, Vol 306, Num 2, pp 458-464, issn 0022-0248, 7 p.Article

Dislocation filtering at the interfaces between AlxIn1-xSb and AlyIn1-ySb layersMISHIMA, T. D; EDIRISOORIYA, M; SANTOS, M. B et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 591-594, issn 0921-4526, 4 p.Conference Paper

Effect of low energy helium irradiation on mechanical properties of 304 stainless steelKAWAKAMI, T; TOKUNAGA, K; YOSHIDA, N et al.Fusion engineering and design. 2006, Vol 81, Num 1-7, pp 335-340, issn 0920-3796, 6 p.Conference Paper

Ordered zinc-vacancy induced Zn0.75Ox nanophase structureYONG DING; RUSEN YANG; ZHONG LIN WANG et al.Solid state communications. 2006, Vol 138, Num 8, pp 390-394, issn 0038-1098, 5 p.Article

Line defects in epitaxial silicon films grown at 560°CPETTER, K; EYIDI, D; FUHS, W et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 117-121, issn 0921-4526, 5 p.Conference Paper

Manifestation of edge dislocations in photoluminescence of GaNRESHCHIKOV, M. A; HUANG, D; HE, L et al.Physica. B, Condensed matter. 2005, Vol 367, Num 1-4, pp 35-39, issn 0921-4526, 5 p.Article

Influence of micro-impurity on protein crystal growth studied by the etch figure methodGUOLIANG DAI; XINGYU LIU; SAZAKI, Gen et al.Journal of crystal growth. 2009, Vol 311, Num 3, pp 548-552, issn 0022-0248, 5 p.Conference Paper

Evolution of dislocations in perylene films with thickness and deposition rateBEIGMOHAMADI, M; NIYAMAKOM, P; FARAHZADI, A et al.Physica status solidi. Rapid research letters (Print). 2008, Vol 2, Num 1, pp 1-3, issn 1862-6254, 3 p.Article

Burgers vector analysis by three-dimensional laser-scattering tomographyALBRECHT, M; NAUMANN, M.Journal of crystal growth. 2008, Vol 310, Num 18, pp 4031-4034, issn 0022-0248, 4 p.Article

GaAs thermal treatment with fullerenesMEKYS, Algirdas; STORASTA, Jurgis; SMILGA, Algirdas P et al.Materials science in semiconductor processing. 2008, Vol 11, Num 2, pp 63-69, issn 1369-8001, 7 p.Article

Surface morphologies of anthracene single crystals grown from vapor phaseJO, Sadaharu; YOSHIKAWA, Hitoshi; FUJII, Akane et al.Applied surface science. 2006, Vol 252, Num 10, pp 3514-3519, issn 0169-4332, 6 p.Article

Scaling of dislocation cells in GaAs crystals by global numeric simulation and their restraint by in situ control of stoichiometryRUDOLPH, P; FRANK-ROTSCH, Ch; JUDA, U et al.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2005, Vol 400-01, pp 170-174, issn 0921-5093, 5 p.Conference Paper

Diffusion length of carriers and excitons in GaN-influence of epilayer microstructureGODLEWSKI, M; LUSAKOWSKA, E; POROWSKI, S et al.Applied surface science. 2004, Vol 223, Num 4, pp 294-302, issn 0169-4332, 9 p.Article

Subsolidus phase relation and crystal structure of the PrBa2-xSrxCu3O7±δ systemSONG, G. B; LIANG, J. K; YANG, L. T et al.Journal of alloys and compounds. 2004, Vol 370, pp 302-306, issn 0925-8388, 5 p.Article

Kinetics of bulk point defects in the growth of nanocavities in crystalline GeKIM, J. C; KIM, Y.-W.Applied surface science. 2004, Vol 229, Num 1-4, pp 19-23, issn 0169-4332, 5 p.Article

Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatmentsLEE, S. W; CHEN, L. J; CHEN, P. S et al.Applied surface science. 2004, Vol 224, Num 1-4, pp 152-155, issn 0169-4332, 4 p.Conference Paper

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