Resistive switching in reactive cosputtered MFe₂O₄ (M = Co, Ni) filmsJIN, C; ZHENG, D. X; LI, P et al.Applied surface science. 2012, Vol 263, pp 678-681, issn 0169-4332, 4 p.Article

The role of quenched-in vacancies for the decomposition of aluminium alloysKLOBES, B; STAAB, T. E. M; HAAKS, M et al.Physica status solidi. Rapid research letters (Print). 2008, Vol 2, Num 5, pp 224-226, issn 1862-6254, 3 p.Article

Structural Analysis and Electric Behavior in Rare Earth Modified Lead Titanate Ferroelectric CeramicsPELAIZ-BARRANCO, A; MENDEZ-GONZALEZ, Y; CALDERON-PINAR, F et al.Ferroelectrics (Print). 2010, Vol 403, pp 213-218, issn 0015-0193, 6 p.Conference Paper

The first-principle calculation of structures and defect energies in tetragonal PbTiO₃GE, F. F; WU, W. D; WANG, X. M et al.Physica. B, Condensed matter. 2009, Vol 404, Num 20, pp 3814-3818, issn 0921-4526, 5 p.Article

Point defect simulations by finite cluster methodKADOLKAR, Charudatt Y; SAHARIAH, Munima B.Computational materials science. 2008, Vol 44, Num 2, pp 443-448, issn 0927-0256, 6 p.Article

Thermal donor formation in CZ-silicon with reference to dimers, trimers and V―O interactionSINGH, Shyam; SINGH, Rajeev; YADAV, B. C et al.Physica. B, Condensed matter. 2009, Vol 404, Num 8-11, pp 1070-1073, issn 0921-4526, 4 p.Article

Dielectric relaxor behavior of A-site complex ferroelectrics of Bi_0.5Na_0.5TiO₃-Bi_0.5K_0.5TiO₃-BiFeO₃ZHOU, C. R; LIU, X. Y; LI, W. Z et al.Solid state communications. 2009, Vol 149, Num 11-12, pp 481-485, issn 0038-1098, 5 p.Article

Oxygen vacancies related electrical response in modified lead titanate ceramicsPELAIZ-BARRANCO, A; GONZALEZ-ABREU, Y.Solid state communications. 2009, Vol 149, Num 45-46, pp 2082-2084, issn 0038-1098, 3 p.Article

Electronic properties of oxygen vacancies in titania nanotubesCHO, J. M; SEO, J. M; LEE, J.-K et al.Physica. B, Condensed matter. 2009, Vol 404, Num 1, pp 127-130, issn 0921-4526, 4 p.Article

Characterization of bulk AlN crystals with positron annihilation spectroscopyTUOMISTO, F; MÄKI, J.-M; HELAVA, H et al.Journal of crystal growth. 2008, Vol 310, Num 17, pp 3998-4001, issn 0022-0248, 4 p.Conference Paper

KIRKENDALL voids in the intermetallic layers of solder joints in MEMSWEINBERG, Kerstin; BÖHME, Thomas; MÜLLER, Wolfgang H et al.Computational materials science. 2009, Vol 45, Num 3, pp 827-831, issn 0927-0256, 5 p.Conference Paper

Preparation and investigation of magnetic properties of wüstite nanoparticlesGHEISARI, M; MOZAFFARI, M; ACET, M et al.Journal of magnetism and magnetic materials. 2008, Vol 320, Num 21, pp 2618-2621, issn 0304-8853, 4 p.Article

Comparison of interaction between Cu precipitate and vacancy in Fe using first-principle calculations and empirical N-body potential calculationsSATO, Koichi; IHARA, Takafumi; SAKURAI, Hisashi et al.Computational materials science. 2009, Vol 47, Num 2, pp 521-525, issn 0927-0256, 5 p.Article

The effects of oxygen partial pressure on the microstructures and photocatalytic property of ZnO nanoparticlesHUIHU WANG; CHANGSHENG XIE.Physica. E, low-dimentional systems and nanostructures. 2008, Vol 40, Num 8, pp 2724-2729, issn 1386-9477, 6 p.Article

Semi-empirical atomistic study of point defect properties in BCC transition metalsOLSSON, Pär A. T.Computational materials science. 2009, Vol 47, Num 1, pp 135-145, issn 0927-0256, 11 p.Article

Computational modeling of the interaction of two edge cracks, and two edge cracks interacting with a nanovoid, via an atomistic finite element methodADELZADEH, M; SHODJA, H. M; RAFII-TABAR, H et al.Computational materials science. 2008, Vol 42, Num 2, pp 186-193, issn 0927-0256, 8 p.Article

Investigating behaviors of H in a W single crystal by first-principles: From solubility to interaction with vacancyLIU, Yue-Lin; ZHOU, Hong-Bo; YING ZHANG et al.Journal of alloys and compounds. 2011, Vol 509, Num 33, pp 8277-8282, issn 0925-8388, 6 p.Article

Vacancy behavior in Czochralski silicon growthSANG HUN LEE; JEONG WON KANG; YOUNG HO HONG et al.Journal of crystal growth. 2009, Vol 311, Num 14, pp 3592-3597, issn 0022-0248, 6 p.Article

Growth and studies of Si-doped AIN layersTHAPA, S. B; HERTKORN, J; KAISER, U et al.Journal of crystal growth. 2008, Vol 310, Num 23, pp 4939-4941, issn 0022-0248, 3 p.Conference Paper

Lateral incorporation of vacancies in Czochralski silicon crystalsKULKARNI, Milind S.Journal of crystal growth. 2008, Vol 310, Num 13, pp 3183-3191, issn 0022-0248, 9 p.Article