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Results 1 to 25 of 208

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Electron-stimulated defect formation in single-walled carbon nanotubes studied by hydrogen thermal desorption spectroscopyARIMA, Satoshi; LEE, Sangkil; MERA, Yutaka et al.Applied surface science. 2009, Vol 256, Num 4, pp 1196-1199, issn 0169-4332, 4 p.Conference Paper

A new concept for the calculation of the mobile dislocation density in constitutive models of strain hardeningRATERS, F.Physica status solidi. B. Basic research. 2003, Vol 240, Num 1, pp 68-74, issn 0370-1972, 7 p.Article

A computational concept for the kinetics of defects in anisotropic materialsKOLLING, S; MUELLER, R; GROSS, D et al.Computational materials science. 2003, Vol 26, pp 87-94, issn 0927-0256, 8 p.Conference Paper

μ-Raman investigations of plasma hydrogenated siliconJOB, R; ULYASHIN, A. G; FAHRNER, W. R et al.EPJ. Applied physics (Print). 2003, Vol 23, Num 1, pp 25-32, issn 1286-0042, 8 p.Conference Paper

Impact of gettering by helium implantation on boron and iron segregationCAYREL, F; ALQUIER, D; VENTURA, L et al.EPJ. Applied physics (Print). 2003, Vol 23, Num 1, pp 41-44, issn 1286-0042, 4 p.Conference Paper

Defect-related diffusion of hydrogen in siliconANTONOVA, I. V; MISIUK, A; LONDOS, C. A et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 659-663, issn 0921-4526, 5 p.Conference Paper

Study of defects in ion-implanted silicon using photoluminescence and positron annihilationHARDING, R; DAVIES, G; COLEMAN, P. G et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 738-742, issn 0921-4526, 5 p.Conference Paper

Positron annihilation study of lattice defects induced by hydrogen absorption in some hydrogen storage materialsSHIRAI, Y; ARAKI, H; MORI, T et al.Journal of alloys and compounds. 2002, Vol 330-32, pp 125-131, issn 0925-8388Article

The activation energies of antiphase-boundary tube annihilation in Fe-AlWU, D; BAKER, I.Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 2002, Vol 82, Num 11, pp 2239-2247, issn 1364-2804Article

Reduction of Te-rich phases in Cd1-xZnxTe (x = 0.04) crystalsLI YUJIE; JIE WANQI.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 43, pp 10183-10191, issn 0953-8984, 9 p.Article

Pyramidal defect formation in view of magnesium segregationFIGGE, S; KRÖGER, R; BÖTTCHER, T et al.Physica status solidi. A. Applied research. 2002, Vol 192, Num 2, pp 456-460, issn 0031-8965Conference Paper

Modeling of defect formation in lead chalcogenides and their propertiesCHESNOKOVA, D. B; KAMCHATKA, M. I.Inorganic materials. 2001, Vol 37, Num 2, pp 111-118, issn 0020-1685Article

Formation and annealing of defects during high-temperature processing of ion-implanted epitaxial silicon: the role of dopant implantsGIRI, P. K; GALVAGNO, G; FERLA, A. L et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 71, Num 1-3, pp 186-191, issn 0921-5107Conference Paper

Optically induced defects in vitreous silicaJUODKAZIS, S; WATANABE, M; SUN, H.-B et al.Applied surface science. 2000, Vol 154-55, pp 696-700, issn 0169-4332Conference Paper

Mass transport and the reduction of threading dislocation in GaNNITTA, S; KARIYA, M; KASHIMA, T et al.Applied surface science. 2000, Vol 159-60, pp 421-426, issn 0169-4332Conference Paper

H2 molecules in c-Si after hydrogen plasma treatmentLEITCH, A. W. R; ALEX, V; WEBER, J et al.Solid state communications. 1998, Vol 105, Num 4, pp 215-219, issn 0038-1098Article

Thermally activated motion of domain wall in a crystal with a small degree of discretenessDMITRIEV, S. V; SHIGENARI, T; ABE, K et al.Computational materials science. 1998, Vol 11, Num 3, pp 227-232, issn 0927-0256Article

Formation and photosensitivity of defects in Se implanted silicaMAGRUDER, R. H; WEEKS, R. A; WELLER, R. A et al.Journal of non-crystalline solids. 1998, Vol 239, Num 1-3, pp 78-83, issn 0022-3093Conference Paper

Annealing of defects in inorganic crystalline hydrates during microwave processingBERDONOSOV, S. S; PROKOF'EV, M. A; LEBEDEV, V. Ya et al.Inorganic materials. 1997, Vol 33, Num 10, pp 1065-1066, issn 0020-1685Article

Annealing of radiation defects in dual-implanted siliconKOZLOV, I. P; ODZHAEV, V. B; POPOK, V. N et al.Semiconductor science and technology. 1996, Vol 11, Num 5, pp 722-725, issn 0268-1242Article

Computer simulation of oxygen precipitation in Czochralski-grown silicon during HI-LO-HI annealsESFANDYARI, J; SCHMEISER, C; SENKADER, S et al.Journal of the Electrochemical Society. 1996, Vol 143, Num 3, pp 995-1001, issn 0013-4651Article

Rectangular vacancy island formation and self-depletion in Czochralski-grown PbMoO4 single crystal during heat treatmentZENG, H. C.Journal of crystal growth. 1996, Vol 160, Num 1-2, pp 119-128, issn 0022-0248Article

Annihilation process of new donors in n-type carbon-rich CZ siliconZHU, S.Materials transactions - JIM. 1996, Vol 37, Num 8, pp 1438-1442, issn 0916-1821Article

Effect of ion dose rate on rapid laser annealing of implanted GaAsMASUDA, K; MURAKAMI, K; NAN, H. Y et al.Journal of electronic materials. 1996, Vol 25, Num 1, pp 3-5, issn 0361-5235Conference Paper

Theoretical simulations of I-center annealing in KCl crystalsPOPOV, A. I; KOTOMIN, E. A; EGLITIS, R. I et al.Radiation effects and defects in solids. 1995, Vol 134, Num 1-4, pp 83-86, issn 1042-0150Conference Paper

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