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Results 1 to 25 of 1314

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Dislocations in plastically deformed apatiteSAKA, H; GOTO, D; MOON, W.-J et al.Journal of materials science. 2008, Vol 43, Num 9, pp 3234-3239, issn 0022-2461, 6 p.Article

Crystal defects and strain of epitaxial inP layers laterally overgrown on SiLANKINEN, A; TUOMI, T; KARILAHTI, M et al.Crystal growth & design. 2006, Vol 6, Num 5, pp 1096-1100, issn 1528-7483, 5 p.Article

Defect generation of rutile-type SnO2 nanocondensates : Imperfect oriented attachment and phase transformationTSENG, Wan-Ju; POUYAN SHEN; CHEN, Shuei-Yuan et al.Journal of solid state chemistry (Print). 2006, Vol 179, Num 4, pp 1237-1246, issn 0022-4596, 10 p.Article

Dynamic dislocation-defect analysisSAIMOTO, S.Philosophical magazine (2003. Print). 2006, Vol 86, Num 27, pp 4213-4233, issn 1478-6435, 21 p.Article

Propagation behavior of threading dislocations during physical vapor transport growth of silicon carbide (SiC) single crystalsOHTANI, Noboru; KATSUNO, Masakazu; TSUGE, Hiroshi et al.Journal of crystal growth. 2006, Vol 286, Num 1, pp 55-60, issn 0022-0248, 6 p.Article

Reduction of threading edge dislocation density in n-type GaN by Si delta-dopingPAN, Y. B; YANG, Z. J; CHEN, Z. T et al.Journal of crystal growth. 2006, Vol 286, Num 2, pp 255-258, issn 0022-0248, 4 p.Article

Selective etching of dislocations in violet-laser diode structuresKAMLER, G; SMALC, J; WOZNIAK, M et al.Journal of crystal growth. 2006, Vol 293, Num 1, pp 18-21, issn 0022-0248, 4 p.Article

The heterogeneous nature of slip in ice single crystals deformed under torsionMONTAGNAT, M; WEISS, J; CHEVY, J et al.Philosophical magazine (2003. Print). 2006, Vol 86, Num 27, pp 4259-4270, issn 1478-6435, 12 p.Article

Transmission electron microscopy study of defect reduction in two-step lateral epitaxial overgrown nonplanar GaN substrate templatesWEI ZHOU; DAWEI REN; DAPKUS, P. D et al.Journal of crystal growth. 2006, Vol 290, Num 1, pp 11-17, issn 0022-0248, 7 p.Article

Interference effects in the electron microscopy of thin crystal foilsBOLLMANN, W.Philosophical magazine (2003. Print). 2006, Vol 86, Num 29-31, pp 4573-4574, issn 1478-6435, 2 p.Article

Atomic-resolution imaging of lattice imperfections in semiconductors by combined aberration-corrected HRTEM and exit-plane wavefunction retrievalTILLMANN, K; HOUBEN, L; THUST, A et al.Philosophical magazine (2003. Print). 2006, Vol 86, Num 29-31, pp 4589-4606, issn 1478-6435, 18 p.Article

Using EELS to observe composition and electronic structure variations at dislocation cores in GaNARSLAN, I; BLELOCH, A; STACH, E. A et al.Philosophical magazine (2003. Print). 2006, Vol 86, Num 29-31, pp 4727-4746, issn 1478-6435, 20 p.Article

Diffuse elastic scattering of electrons by individual nanometer-sized dislocation loopsKIRK, M. A; JENKINS, M. L; ZHOU, Z et al.Philosophical magazine (2003. Print). 2006, Vol 86, Num 29-31, pp 4797-4808, issn 1478-6435, 12 p.Article

A model for the dynamics of loop drag by a gliding dislocationRONG, Z; OSETSKY, Y. N; BACON, D. J et al.Philosophical magazine (2003. Print). 2005, Vol 85, Num 14, pp 1473-1493, issn 1478-6435, 21 p.Article

Dislocation model of an asymmetric weak zone for problems of interaction between crack-like defectsSIMONOV, I. V; KARIHALOO, B. L.Philosophical magazine (2003. Print). 2005, Vol 85, Num 17, pp 1847-1864, issn 1478-6435, 18 p.Article

Investigation of residual dislocations in VGF-grown Si-doped GaAsBIRKMANN, B; STENZENBERGER, J; JURISCH, M et al.Journal of crystal growth. 2005, Vol 276, Num 3-4, pp 335-346, issn 0022-0248, 12 p.Article

Effects of Al concentration and resulting long-period superstructures on the plastic properties at room temperature of Al-rich TiAl single crystalsNAKANO, T; HAYASHI, K; UMAKOSHI, Y et al.Philosophical magazine (2003. Print). 2005, Vol 85, Num 22, pp 2527-2548, issn 1478-6435, 22 p.Article

Study of threading dislocations in the plan-view sample of SiGe/Si(001) superlattices by transmission electron microscopyATICI, Yusuf.Journal of electronic materials. 2005, Vol 34, Num 5, pp 612-616, issn 0361-5235, 5 p.Article

Atom probe tomography of radiation-sensitive KS-01 weldMILLER, M. K; RUSSELL, K. F; SOKOLOV, M. A et al.Philosophical magazine (2003. Print). 2005, Vol 85, Num 4-7, pp 401-408, issn 1478-6435, 8 p.Conference Paper

Measurement of diffuse electron scattering by single nanometre-sized defects in goldKIRK, M. A; DAVIDSON, R. S; JENKINS, M. L et al.Philosophical magazine (2003. Print). 2005, Vol 85, Num 4-7, pp 497-507, issn 1478-6435, 11 p.Conference Paper

JERK, an event-based Kinetic Monte Carlo model to predict microstructure evolution of materials under irradiationDALLA TORRE, J; BOCQUET, J.-L; DOAN, N. V et al.Philosophical magazine (2003. Print). 2005, Vol 85, Num 4-7, pp 549-558, issn 1478-6435, 10 p.Conference Paper

Dislocation dynamics modelling of dislocation-loop interactions in irradiated metalsRONG, Z; MOHLES, V; BACON, D. J et al.Philosophical magazine (2003. Print). 2005, Vol 85, Num 2-3, pp 171-188, issn 1478-6435, 18 p.Conference Paper

Modeling and experiments on epitaxially grown multilayers with implications to critical thicknessVANAMU, Ganesh; ROBBINS, Joshua; KHRAISHI, Tariq A et al.Journal of electronic materials. 2005, Vol 34, Num 5, pp 522-527, issn 0361-5235, 6 p.Conference Paper

Atomistic study of dislocation loop emission from a crack tipTING ZHU; JU LI; YIP, Sidney et al.Physical review letters. 2004, Vol 93, Num 2, pp 025503.1-025503.4, issn 0031-9007Article

Incorporation of local structure in continuous dislocation theoryLESAR, R; RICKMAN, J. M.Physical review B. Condensed matter and materials physics. 2004, Vol 69, Num 17, pp 172105.1-172105.4, issn 1098-0121Article

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