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Results 1 to 25 of 1072

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Influence of contamination on the electrical activity of crystal defects in siliconKITTLER, Martin; SEIFERT, Winfried; KNOBLOCH, Klaus et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 281-288, issn 0167-9317, 8 p.Conference Paper

The energy of dislocation dipolesSCHOECK, Gunther.Philosophical magazine (2003. Print). 2014, Vol 94, Num 13-15, pp 1542-1551, issn 1478-6435, 10 p.Article

Dislocation modeling for the microelectronics industrySCHWARZ, K. W; CHIDAMBARRAO, D.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2005, Vol 400-01, pp 435-438, issn 0921-5093, 4 p.Conference Paper

Geometry of metadislocations in approximants of quasicrystalsGRATIAS, Denis; QUIQUANDON, Marianne; CAILLARD, Daniel et al.Philosophical magazine (2003. Print). 2013, Vol 93, Num 1-3, pp 304-313, issn 1478-6435, 10 p.Article

Celebrating tje Career of PAtrick VeyssièreSAADA, Georges; FOREST, Samuel.Philosophical magazine (2003. Print). 2013, Vol 93, Num 1-3, issn 1478-6435, 315 p.Serial Issue

Celebrating the career of Jany Thibault-Penisson in the microscopy of defects and interfacesPRIESTER, Louisette; DAHMEN, U; LARTIGUE-KORINEK, S et al.Philosophical magazine (2003. Print). 2013, Vol 93, Num 10-12, issn 1478-6435, 313 p.Serial Issue

The impact of F.R.N. Nabarro on the LEDS theory of workhardeningKUHLMANN-WILSDORF, Doris.Progress in materials science. 2009, Vol 54, Num 6, pp 707-739, issn 0079-6425, 33 p.Conference Paper

Core reconstructions of the (100) edge dislocation in single crystal CVD diamondFUJITA, N; BLUMENAU, A. T; JONES, R et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 7, pp 2211-2215, issn 1862-6300, 5 p.Conference Paper

Influence of electromagnetic radiation on the movement of dislocations in ionic crystalsFEODOROV, Victor A; PLUSHNIKOVA, Tatjana N; CHIVANOV, Andrei V et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 65970V.1-65970V.4, issn 0277-786X, isbn 978-0-8194-6733-1, 1VolConference Paper

Calculation of slip length in 300 mm silicon wafers during thermal processesAKATSUKA, M; SUEOKA, K; KATAHAMA, H et al.Journal of the Electrochemical Society. 1999, Vol 146, Num 7, pp 2683-2688, issn 0013-4651Article

An easy implementation of displacement calculations in 3D discrete dislocation dynamics codesFIVEL, Marc; DEPRES, Christophe.Philosophical magazine (2003. Print). 2014, Vol 94, Num 28-30, pp 3206-3214, issn 1478-6435, 9 p.Article

Response to commentsHIRTH, J. P.Philosophical magazine (2003. Print). 2014, Vol 94, Num 25-27, pp 3177-3182, issn 1478-6435, 6 p.Article

Stable edge dislocations in finite crystalsKUMAR, Arun; SUBRAMANIAM, Anandh.Philosophical magazine (2003. Print). 2012, Vol 92, Num 22-24, pp 2947-2956, issn 1478-6435, 10 p.Article

Connection between deformation-induced dislocation substructures and martensite formation in stainless steelDAS, Arpan; SIVAPRASAD, S; CHAKRABORTI, P. C et al.Philosophical magazine letters. 2011, Vol 91, Num 9-10, pp 664-675, issn 0950-0839, 12 p.Article

Materials analogue of zero-stiffness structuresKUMAR, Arun; SUBRAMANIAM, Anandh.Philosophical magazine letters. 2011, Vol 91, Num 3-4, pp 272-279, issn 0950-0839, 8 p.Article

Micromechanics of screw dislocations in elastic solids with inner and outer cylindrical boundariesGUSEV, P. S; GUTKIN, M. Yu; SHEINERMAN, A. G et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 65970T.1-65970T.8, issn 0277-786X, isbn 978-0-8194-6733-1, 1VolConference Paper

Compact and dissociated dislocations in aluminum: Implications for deformationSRINIVASAN, S. G; LIAO, X. Z; BASKES, M. I et al.Physical review letters. 2005, Vol 94, Num 12, pp 125502.1-125502.4, issn 0031-9007Article

A stochastic model for the critical length of a spiral edgeSIZEMORE, Jacob P; DOHERTY, Michael F.Journal of crystal growth. 2010, Vol 312, Num 6, pp 785-792, issn 0022-0248, 8 p.Article

Deviations and polarity of [100] dislocations in bcc metalsSCHOECK, Gunther; ROMANER, Lorenz.Philosophical magazine letters. 2010, Vol 90, Num 6, pp 385-391, issn 0950-0839, 7 p.Article

EFFECTIVE DISLOCATION LINES IN CONTINUOUSLY DISLOCATED CRYSTALS II. CONGRUENCES OF EFFECTIVE DISLOCATIONSTRZEOSOWSKI, A.Journal of technical physics. 2008, Vol 49, Num 1, pp 53-74, issn 0324-8313, 22 p.Article

Continuum and discrete models of dislocation pile-ups. II. Pile-up of screw dislocations at the interface in a bimetallic solidVOSKOBOINIKOV, R. E; CHAPMAN, S. J; OCKENDON, J. R et al.Philosophical magazine letters. 2007, Vol 87, Num 9, pp 669-676, issn 0950-0839, 8 p.Article

Elasticity to Atomistics: Predictive Modeling of Defect Behavior: Symposium within MMM4 (October 2008): Dedicated to David BaconOSETSKY, Yuri; SCATTERGOOD, Ron; SERRA, Anna et al.Philosophical magazine (2003. Print). 2010, Vol 90, Num 7-8, issn 1478-6435, 300 p.Serial Issue

The development and early applications of the weak-beam techniqueWHELAN, M. J.Philosophical magazine (2003. Print). 2010, Vol 90, Num 35-36, pp 4611-4622, issn 1478-6435, 12 p.Conference Paper

The role of harmonic functions in dislocation-boundary interactions by the method of imagesCHOU, Y. T; PANDE, C. S; MASUMURA, R. A et al.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2007, Vol 452-453, pp 99-102, issn 0921-5093, 4 p.Article

Investigation of the unit cell parameter and dislocation structure of polycrystalline diamond filmsSAMSONENKO, N. D; SAMSONENKO, S. N; VARYUKHIN, V. N et al.Journal of physics. Condensed matter (Print). 2006, Vol 18, Num 23, pp 5303-5312, issn 0953-8984, 10 p.Article

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