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Results 1 to 25 of 346

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Comment on: a/[110] stacking fault model for platelets in diamond. Authors' replyJONES, R; HEGGIE, M. I; GOSS, J. P et al.Physical review letters. 2005, Vol 95, Num 13, pp 139601.1-139602.1, issn 0031-9007Article

Formation of stacking faults in nitrogen-doped silicon single crystalsAMMON, W. V; HÖLZL, R; WETZEL, T et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 234-246, issn 0167-9317, 13 p.Conference Paper

A criterion for the formation of stacking faults at incoherent spheroidal precipitates and application to silicon oxide in siliconVANHELLEMONT, Jan; DE GRYSE, Olivier; CLAUWS, Paul et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 10, pp 2341-2346, issn 1862-6300, 6 p.Article

Dependence of stacking-fault nucleation on cluster mobilityPOLOP, Celia; LAMMERSCHOP, Andreas; BUSSE, Carsten et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 12, pp 125423.1-125423.8, issn 1098-0121Article

Measuring stacking fault densities in shock-compressed FCC crystals using in situ x-ray diffractionROSOLANKOVA, K; WARK, J. S; BRINGA, E. M et al.Journal of physics. Condensed matter (Print). 2006, Vol 18, Num 29, pp 6749-6757, issn 0953-8984, 9 p.Article

First-principles calculations of generalized stacking fault energy in Mg alloys with Sn, Pb and Sn+Pb dopingsZHANG, Hua-Yuan; WANG, Hui-Yuan; CHENG WANG et al.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2013, Vol 584, pp 82-87, issn 0921-5093, 6 p.Article

A dislocation dynamics study of the strength of stacking fault tetrahedra. Part II interactions with mixed and edge dislocationsMARTINEZ, E; MARIAN, J; PERLADO, J. M et al.Philosophical magazine (2003. Print). 2008, Vol 88, Num 6, pp 841-863, issn 1478-6435, 23 p.Article

Cathodoluminescence investigation of stacking faults extension in 4H-SiCJUILLAGUET, S; ALBRECHT, M; CAMASSEL, J et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 7, pp 2222-2228, issn 1862-6300, 7 p.Conference Paper

Stacking-fault based microscopic model for platelets in diamondMIRANDA, C. R; ANTONELLI, A; NUNES, R. W et al.Physical review letters. 2004, Vol 93, Num 26, pp 265502.1-265502.4, issn 0031-9007, 1Article

Recrystallization in a low-density low-alloy Fe-Mn-Al-C duplex-phase alloyRANA, R; LIU, C; RAY, R. K et al.Philosophical magazine letters. 2014, Vol 94, Num 1-3, pp 127-134, issn 0950-0839, 8 p.Article

Energy investigation of effects of O on mechanical properties of NiAl intermetallicsHU, Xue-Lan; LIU, Li-Hua; YING ZHANG et al.Journal of physics. Condensed matter (Print). 2011, Vol 23, Num 2, issn 0953-8984, 025501.1-025501.5Article

Polytypes of long-period stacking structures synchronized with chemical order in a dilute Mg―Zn―Y alloyABE, E; ONO, A; ITOI, T et al.Philosophical magazine letters. 2011, Vol 91, Num 9-10, pp 690-696, issn 0950-0839, 7 p.Article

Molecular dynamic simulation of Ti3Al brittle fracture behaviorYAKOVENKOVA, Liudmila I; KARKINA, Lidia E.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 65970F.1-65970F.5, issn 0277-786X, isbn 978-0-8194-6733-1, 1VolConference Paper

Electronic origin of solid solution softening in bcc molybdenum alloysMEDVEDEVA, N. I; GORNOSTYREV, Yu. N; FREEMAN, A. J et al.Physical review letters. 2005, Vol 94, Num 13, pp 136402.1-136402.4, issn 0031-9007Article

Revisiting the defect structure of MAX phases : the case of Ti4AlN3JOULAIN, A; THILLY, L; RABIER, J et al.Philosophical magazine (2003. Print). 2008, Vol 88, Num 9, pp 1307-1320, issn 1478-6435, 14 p.Article

Stacking fault disorder and its diffraction consequences in Ba3MNb2O9 (M = Co and Mn) 1:2 triple perovskitesYUN LIU; WITHERS, Ray L; TING, Valeska et al.Physica. B, Condensed matter. 2006, Vol 385-86, pp 564-566, issn 0921-4526, 3 p., 1Conference Paper

High-temperature creep associated with the climb of extended dislocations subjected to chemical stressesJIA LI; QIHONG FANG; YOUWEN LIU et al.Philosophical magazine letters. 2014, Vol 94, Num 4-6, pp 327-333, issn 0950-0839, 7 p.Article

Determination of stacking fault densities in 3C-SiC crystals by diffuse X-ray scatteringBOULLE, A; CHAUSSENDE, D; PECQUEUX, F et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 8, pp 2528-2534, issn 1862-6300, 7 p.Conference Paper

Computational study of stacking faults in sapphire using total energy methodsJHON, M. H; GLAESER, A. M; CHRZAN, D. C et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 21, pp 214101.1-214101.5, issn 1098-0121Article

A mechanism-based model for deformation twinning in polycrystalline FCC steelWANG, Y. Y; SUN, X; WANG, Y. D et al.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2014, Vol 607, pp 206-218, issn 0921-5093, 13 p.Article

Dynamic recrystallization of a biomedical Co―Cr―W-based alloy under hot deformationYAMANAKA, Kenta; MORI, Manami; CHIBA, Akihiko et al.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2014, Vol 592, pp 173-181, issn 0921-5093, 9 p.Article

Hydride vapor phase epitaxy of high quality {1013} semipolar GaN on m-plane sapphire coated with self-assembled SiO2 nanospheresJIANKUN YANG; TONGBO WEI; ZIQIANG HUO et al.Journal of crystal growth. 2014, Vol 387, pp 101-105, issn 0022-0248, 5 p.Article

In-situ, ex-situ EBSD and (HR-)TEM analyses of primary, secondary and tertiary twin development in an Mg-4 wt%Li alloyLENTZ, M; COELHO, R. S; CAMIN, B et al.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2014, Vol 610, pp 54-64, issn 0921-5093, 11 p.Article

Microstructural evolution and microhardness change of Al―7wt%Si―0.3wt%Mg alloy granules/powder particles during high energy ball millingLIANG, J. M; JIA, M. T; GUO, X. Q. et al.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2014, Vol 590, pp 307-313, issn 0921-5093, 7 p.Article

Three ranges of the angular dependence of critical current of BaZrO3 doped YBa2Cu3O7 ― δ thin films grown at different temperaturesMALMIVIRTA, M; YAO, L. D; HUHTINEN, H et al.Thin solid films. 2014, Vol 562, pp 554-560, issn 0040-6090, 7 p.Article

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