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Results 1 to 25 of 1617

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Magnetron sputtered Ti-Si-C thin films prepared at low temperaturesLOPES, C; PARREIRA, N. M. G; CARVALHO, S et al.Surface & coatings technology. 2007, Vol 201, Num 16-17, pp 7180-7186, issn 0257-8972, 7 p.Article

The influence of substrate temperature variation on tungsten oxide thin film growth in an HFCVD systemPAL, S; JACOB, C.Applied surface science. 2007, Vol 253, Num 6, pp 3317-3325, issn 0169-4332, 9 p.Article

Highly oriented ( 1 0 0) ZnO thin films by spray pyrolysisPRASADA RAO, T; SANTHOSHKUMAR, M. C.Applied surface science. 2009, Vol 255, Num 16, pp 7212-7215, issn 0169-4332, 4 p.Article

Influence of the O/C ratio in the behaviour of TiCxOy thin filmsFERNANDES, A. C; VAZ, F; REBOUTA, L et al.Surface & coatings technology. 2007, Vol 201, Num 9-11, pp 5587-5591, issn 0257-8972, 5 p.Conference Paper

Characterization of structure and role of different textures in polycrystalline Si filmsHADDAD ADEL, A; INOKUMA, T; KURATA, Y et al.Journal of non-crystalline solids. 2005, Vol 351, Num 24-26, pp 2107-2114, issn 0022-3093, 8 p.Article

Interfacial layers in Ta2O5 based stacks and constituent depth profiles by spectroscopic ellipsometryKARMAKOV, Y; PASKALEVA, A; ATANASSOVA, E et al.Applied surface science. 2012, Vol 258, Num 10, pp 4507-4512, issn 0169-4332, 6 p.Article

Hydrogenated diamond-like carbon film deposited on UHMWPE by RF-PECVDXINGLING SHI; QINGLIANG WANG; LINGLI XU et al.Applied surface science. 2009, Vol 255, Num 19, pp 8246-8251, issn 0169-4332, 6 p.Article

Rubidium metavanadate formation at room temperature under vacuum ultraviolet irradiation from metal-organic compositionsNAKAJIMA, Tomohiko; TSUCHIYA, Tetsuo; KUMAGAI, Toshiya et al.Applied surface science. 2009, Vol 255, Num 24, pp 9787-9790, issn 0169-4332, 4 p.Conference Paper

Synthesis of molybdenum silicide by both ion implantation and ion beam assisted depositionQINGLI MENG; JIZHONG ZHANG; ZHANPING LI et al.Applied surface science. 2008, Vol 254, Num 9, pp 2678-2684, issn 0169-4332, 7 p.Article

Influence of carrier gas pressure and flow rate on atomic layer deposition of HfO2 and ZrO2 thin filmsAARIK, Jaan; AIDLA, Aleks; KASIKOV, Aame et al.Applied surface science. 2006, Vol 252, Num 16, pp 5723-5734, issn 0169-4332, 12 p.Article

Microwave dielectric properties of W-doped Ba0.6Sr0.4TiO3 thin films grown on (001) MgO by pulsed laser deposition with a variable oxygen deposition pressureNAVI, N; HORWITZ, J. S; AUYEUNG, R. C. Y et al.Thin solid films. 2006, Vol 510, Num 1-2, pp 115-118, issn 0040-6090, 4 p.Article

Growth of epitaxial Y2O3 buffer layers on biaxially textured Ni-W substrates for YBCO coated conductors by MOD approachBHUIYAN, M. S; PARANTHAMAN, M; KANG, S et al.Physica. C. Superconductivity. 2005, Vol 422, Num 3-4, pp 95-101, issn 0921-4534, 7 p.Article

Ga assisted in situ etching of AlGaInAs and InGaAsP multi quantum well structures using tertiarybutylchlorideCODATO, S; CAMPI, R; RIGO, C et al.Journal of crystal growth. 2005, Vol 282, Num 1-2, pp 7-17, issn 0022-0248, 11 p.Article

CuIn1-x GaxS2 wide gap absorbers grown by close-spaced vapor transportMOUDAKIR, T; DJESSAS, K; MASSE, G et al.Journal of crystal growth. 2004, Vol 270, Num 3-4, pp 517-526, issn 0022-0248, 10 p.Article

Chemical beam epitaxial growth of AlInAs and investigations of electrolytes for ECV profilingUDHAYASANKAR, M; KUMAR, J; RAMASAMY, P et al.Journal of crystal growth. 2004, Vol 268, Num 3-4, pp 389-395, issn 0022-0248, 7 p.Conference Paper

Effect of anneal temperature on GaN nucleation layer transformationLADA, M; CULLIS, A. G; PARBROOK, P. J et al.Journal of crystal growth. 2003, Vol 258, Num 1-2, pp 89-99, issn 0022-0248, 11 p.Article

Study of surface defects on 3C-SiC films grown on Si(111) by CVDHERNANDEZ, M. J; FERRO, G; CHASSAGNE, T et al.Journal of crystal growth. 2003, Vol 253, Num 1-4, pp 95-101, issn 0022-0248, 7 p.Article

Triple axis diffractometric investigations of the microstructure of thin AlxGa1-xN epitaxial filmsZIELINSKA-ROHOZINSKA, E; KOWALSKA, M; PAKULA, K et al.Crystal research and technology (1979). 2003, Vol 38, Num 11, pp 951-955, issn 0232-1300, 5 p.Article

An XPD and LEED study of highly strained ultrathin Ni films on Pd(1 0 0)PETUKHOV, M; RIZZI, G. A; SAMBI, M et al.Applied surface science. 2003, Vol 212-13, pp 264-266, issn 0169-4332, 3 p.Conference Paper

Epitaxial films for Ge-Sb-Te phase change memorySHAYDUK, R; BRAUN, W.Journal of crystal growth. 2009, Vol 311, Num 7, pp 2215-2219, issn 0022-0248, 5 p.Conference Paper

Stress, mechanical and adhesion properties of multilayer tetrahedral amorphous carbon filmsXIAO HAN; JIAQI ZHU; JIECAI HAN et al.Applied surface science. 2008, Vol 255, Num 2, pp 607-609, issn 0169-4332, 3 p.Conference Paper

Phase-field simulation of rapid crystallization of silicon on substrateSTEINBACH, I; APEL, M.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2007, Vol 449-451, pp 95-98, issn 0921-5093, 4 p.Conference Paper

Structure, electrical and optical properties of N-In codoped ZnO thin films prepared by ion-beam enhanced deposition methodNINGYI YUAN; JINHUA LI; LINING FAN et al.Journal of crystal growth. 2006, Vol 290, Num 1, pp 156-160, issn 0022-0248, 5 p.Article

Dependence of the electronic parameters on the InyGa1-yAs quantum well width in modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs strained single quantum wellsLEE, D. U; KIM, T. W; YOO, K. H et al.Applied surface science. 2005, Vol 240, Num 1-4, pp 375-380, issn 0169-4332, 6 p.Article

Pulsed laser deposition of epitaxial Al-doped ZnO film on sapphire with GaN buffer layerKUMAR, Manoj; MEHRA, R. M; WAKAHARA, Akihiro et al.Thin solid films. 2005, Vol 484, Num 1-2, pp 174-183, issn 0040-6090, 10 p.Article

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