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Results 1 to 25 of 970

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Sub-surface oxidation at the aluminum-sapphire interface during low-temperature annealingDUTTA, Sreya; CHAN, Helen M; VINCI, Richard P et al.Journal of the American Ceramic Society. 2007, Vol 90, Num 8, pp 2571-2575, issn 0002-7820, 5 p.Article

Grafting of 1-alkynes to hydrogen-terminated (100)silicon surfacesCEROFOLINI, G. F; GALATI, C; REINA, S et al.Applied physics. A, Materials science & processing (Print). 2005, Vol 80, Num 1, pp 161-166, issn 0947-8396, 6 p.Article

Interfacial phenomena in high temperature processesMILLS, K. C; HONDROS, E. D; ZUSHU LI et al.Journal of materials science. 2005, Vol 40, Num 9-10, pp 2403-2409, issn 0022-2461, 7 p.Conference Paper

Strain-accelerated HF etching of AlAs for epitaxial lift-offVONCKEN, M. M. A. J; SCHERMER, J. J; BAUHUIS, G. J et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 21, pp 3585-3596, issn 0953-8984, 12 p.Article

Self-affine surface morphology of plastically deformed metalsZAISER, Michael; GRASSET, Frederic Madani; KOUTSOS, Vasileios et al.Physical review letters. 2004, Vol 93, Num 19, pp 195507.1-195507.4, issn 0031-9007Article

International Symposium on In-situ Electron Microscopy, Nagoya, Japan, 20-22 January 2003SAKA, Hiroyasu.Philosophical magazine (2003. Print). 2004, Vol 84, Num 25-26, issn 1478-6435, 234 p.Conference Proceedings

ACSIN-7: Proceedings of the Seventh International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures, Nara, Japan, November 16-20, 2003IWASAKI, Hiroshi; ZAIMA, Shigeaki; OSHIMA, Chuhei et al.Applied surface science. 2004, Vol 237, Num 1-4, issn 0169-4332, 701 p.Conference Proceedings

Calculation of interfacial tension based on sub-lattice model and thermodynamic dataKANG, L. T; QIAO, Z. Y; YUAN, B. Y et al.Calphad. 2003, Vol 27, Num 1, pp 57-64, issn 0364-5916, 8 p.Article

Thermally activated domain boundary formation on a missing row reconstructed surface: Au(110)ROST, M. J; VAN ALBADA, S. B; FRENKEN, J. W. M et al.Surface science. 2003, Vol 547, Num 1-2, pp 71-84, issn 0039-6028, 14 p.Article

The differential reactivity of octahydridosilsesquioxane on Si(1 0 0)-2 x 1 and Si(1 1 1)-7 x 7: a comparative experimental studySCHNEIDER, Kevin S; NICHOLSON, Kenneth T; OWENS, Thomas M et al.Ultramicroscopy. 2003, Vol 97, Num 1-4, pp 35-45, issn 0304-3991, 11 p.Conference Paper

Anodic alumina template on Au/Si substrate and preparation of CdS nanowiresYANG YANG; HUILAN CHEN; YONGFENG MEI et al.Solid state communications. 2002, Vol 123, Num 6-7, pp 279-282, issn 0038-1098Article

Comparative surface studies on wet and dry sacrificial thermal oxidation on silicon carbideKOH, A; KESTLE, A; WRIGHT, C et al.Applied surface science. 2001, Vol 174, Num 3-4, pp 210-216, issn 0169-4332Article

Contamination of Si surfaces in ultrahigh vacuum and formation of SiC islandsXIE, F; VON BLANCKENHAGEN, P; WU, J et al.Applied surface science. 2001, Vol 181, Num 1-2, pp 139-144, issn 0169-4332Article

Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on siliconCHAMBERS, J. J; BUSCH, B. W; SCHULTE, W. H et al.Applied surface science. 2001, Vol 181, Num 1-2, pp 78-93, issn 0169-4332Article

An analytical solution for the flexural response of intelligent composite and sandwich panelsSURESH, R; SINGH, Gajbir; VENKATESWARA RAO, G et al.Acta mechanica. 2001, Vol 152, Num 1-4, pp 81-93, issn 0001-5970Article

Stresses near a conical point on the interface between two mediaDENISYUK, I. T.Mechanics of solids. 2001, Vol 36, Num 3, pp 55-64, issn 0025-6544Article

Electron and atom dynamics at solid surfaces and relation to epitaxyTSONG, Tien T; CHANG, Chia-Seng; HWANG, Ing-Shouh et al.The Journal of physics and chemistry of solids. 2001, Vol 62, Num 9-10, pp 1689-1730, issn 0022-3697Article

First-principles interpretation of scanning tunneling microscopy applied to transition-metal surfaces : Buried CuIr/Cu(001) surface alloysHEINZE, S; BIHLMAYER, G; BLÜGEL, S et al.Physica status solidi. A. Applied research. 2001, Vol 187, Num 1, pp 215-226, issn 0031-8965Conference Paper

Asia-Pacific Surface and Interface Analysis Conference, Beijing, China, 23-26 October 2000WATTS, J. F; XUE, Q.Surface and interface analysis. 2001, Vol 32, Num 1, issn 0142-2421, 317 p.Conference Proceedings

Physical Chemistry of Wet Etching of SiliconCAMON, Henri.Sensors and materials. 2001, Vol 13, Num 5, issn 0914-4935, 69 p.Conference Proceedings

Temperature modification of the Nb oxidation at the Nb/Al interface studied by reflEXAFSD'ACAPITO, F; MOBILIO, S; CIKMACS, P et al.Surface science. 2000, Vol 468, Num 1-3, pp 77-84, issn 0039-6028Article

In situ observation of the Si melt-silica glass interface concerning CZ-Si crystal growthXINMING HUANG; YAMAHARA, K; HOSHIKAWA, K et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 72, Num 2-3, pp 164-168, issn 0921-5107Conference Paper

NC-AFM'99: Proceedings of the Second International Workshop on Noncontact Atomic Force Microscopy, Pontresina, Switzerland, September 1-4, 1999BENNEWITZ, Roland; GERBER, Christoph; MEYER, Ernst et al.Applied surface science. 2000, Vol 157, Num 4, issn 0169-4332, 212 p.Conference Proceedings

WE-Heraeus Seminar on Nitrogen in Solids and at Solid Surfaces: Present Status and Future TrendsPhysica status solidi. A. Applied research. 2000, Vol 177, Num 1, pp 3-171, issn 0031-8965Conference Proceedings

Adsorption of water on the MgO(001) surfaceENGKVIST, O; STONE, A. J.Surface science. 1999, Vol 437, Num 1-2, pp 239-248, issn 0039-6028Article

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