Influence of inserting AIN between AlSiON and 4H-SiC interface for the MIS structureKOMATSU, Naoyoshi; SATOH, Tomohisa; HONJO, Masatomo et al.Applied surface science. 2011, Vol 257, Num 20, pp 8307-8310, issn 0169-4332, 4 p.Article

The effect of temperature on interfacial characteristics of fiber cord/rubber composite in the pull-out processFANG, Qing-Hong; WANG, Hui-Bin; HUANG, Bao-Zong et al.Surface and interface analysis. 2010, Vol 42, Num 9, pp 1507-1513, issn 0142-2421, 7 p.Article

The roughness surface expressed by the mathematical modelMACUROVA, Anna.Applied surface science. 2010, Vol 256, Num 18, pp 5656-5658, issn 0169-4332, 3 p.Conference Paper

Er³⁺ Doping conditions of planar porous silicon waveguidesNAJAR, A; LORRAIN, N; AJLANI, H et al.Applied surface science. 2009, Vol 256, Num 3, pp 581-586, issn 0169-4332, 6 p.Article

Influence of surface roughness and contact load on friction coefficient and scratch behavior of thermoplastic olefinsHAN JIANG; BROWNING, Robert; FINCHER, Jason et al.Applied surface science. 2008, Vol 254, Num 15, pp 4494-4499, issn 0169-4332, 6 p.Article

International Symposium on Atomic Level Characterizations for New Materials and Devices (ALC 2007), Kanazawa, Japan, 28 October-2 November 2007KAWAI, J; TANAKA, K; TAKAKUWA, Y et al.Surface and interface analysis. 2008, Vol 40, Num 13, issn 0142-2421, 207 p.Conference Proceedings

Praseodymium silicide formation at the Pr₂O₃/Si interfaceWATAHIKI, Tatsuro; TINKHAM, Brad P; JENICHEN, Bernd et al.Applied surface science. 2008, Vol 255, Num 3, pp 758-760, issn 0169-4332, 3 p.Conference Paper

Thin film nanocrystalline silicon and nanostructured interfaces for multibandgap triple junction solar cellsSCHROPP, R. E. I; LI, H; RATH, J. K et al.Surface and interface analysis. 2008, Vol 40, Num 6-7, pp 970-973, issn 0142-2421, 4 p.Conference Paper

Accurate detection of interface between SiO₂ film and Si substrateQIAN, H. X; ZHOU, W; LI, X. M et al.Applied surface science. 2007, Vol 253, Num 12, pp 5511-5515, issn 0169-4332, 5 p.Article

First-principles investigation of the atomic and electronic structures of α -Al₂O₃(0001 ) /Ni(111) interfacesSIQI SHI; TANAKA, Shingo; KOHYAMA, Masanori et al.Journal of the American Ceramic Society. 2007, Vol 90, Num 8, pp 2429-2440, issn 0002-7820, 12 p.Article

Interface crystallography and structure in LaB₆-ZrB₂ directionally solidified eutecticsDENG, H; DICKEY, E. C; PADERNO, Y et al.Journal of the American Ceramic Society. 2007, Vol 90, Num 8, pp 2603-2609, issn 0002-7820, 7 p.Article

Stiffness variation in the interphase of amine-cured epoxy adjacent to copper microstructuresJAEUN CHUNG; MUNZ, Martin; STURM, Heinz et al.Surface and interface analysis. 2007, Vol 39, Num 7, pp 624-633, issn 0142-2421, 10 p.Article

The role of reconstruction in self-assembly of alkylthiolate monolayers on coinage metal surfacesWOODRUFF, D. P.Applied surface science. 2007, Vol 254, Num 1, pp 76-81, issn 0169-4332, 6 p.Conference Paper

The Sn/Ni-7wt.%V interfacial reactionsCHEN, Chih-Chi; CHEN, Sinn-Wen.Journal of electronic materials. 2006, Vol 35, Num 9, pp 1701-1707, issn 0361-5235, 7 p.Article

FIB and TEM studies of interface structure in diamond-SiC compositesJOON SEOK PARK; SINCLAIR, Robert; ROWCLIFFE, David et al.Journal of materials science. 2006, Vol 41, Num 14, pp 4611-4616, issn 0022-2461, 6 p.Article

Intergranular films at Au-sapphire interfacesBARAM, Mor; KAPLAN, Wayne D.Journal of materials science. 2006, Vol 41, Num 23, pp 7775-7784, issn 0022-2461, 10 p.Conference Paper

Analysis of the redeposition of AuSn₄ on Ni/Au contact pads when using SnPbAg, SnAg, and SnAgCu soldersLAURILA, T; VUORINEN, V; MATTILA, T et al.Journal of electronic materials. 2005, Vol 34, Num 1, pp 103-111, issn 0361-5235, 9 p.Article

Crystal growth and dissolution processes at the calcite-water interface in the presence of zinc ionsFREIJ, Sawsan J; GODELITSAS, Athanasios; PUTNIS, Andrew et al.Journal of crystal growth. 2005, Vol 273, Num 3-4, pp 535-545, issn 0022-0248, 11 p.Article

Effects of Cu contents in Pb-free solder alloys on interfacial reactions and bump reliability of Pb-free solder bumps on electroless Ni-P under-bump metallurgyJEON, Young-Doo; PAIK, Kyung-Wook; OSTMANN, Adreas et al.Journal of electronic materials. 2005, Vol 34, Num 1, pp 80-90, issn 0361-5235, 11 p.Article

Interface study of transition metal (Fe, Zr) on 4H-SiC(0001)Si face : photoemission electron microscopy and soft X-ray fluorescence spectroscopyHIRAI, M; KAMEZAWA, C; AZATYAN, S et al.Applied surface science. 2005, Vol 249, Num 1-4, pp 362-366, issn 0169-4332, 5 p.Article

Investigation of the interface region between a porous silicon layer and a silicon substrateLEE, Ki-Won; PARK, Dae-Kyu; KIM, Young-You et al.Thin solid films. 2005, Vol 478, Num 1-2, pp 183-187, issn 0040-6090, 5 p.Article

Molecular dynamics simulations of interfaces between NiO and cubic ZrO₂FISHER, C. A. J; MATSUBARA, H.Philosophical magazine (2003. Print). 2005, Vol 85, Num 10, pp 1067-1088, issn 1478-6435, 22 p.Article

Local order in interfacesVAN DER EERDEN, J. P. J. M; MAKKINJE, J; VLUGT, T. J. H et al.Journal of crystal growth. 2005, Vol 275, Num 1-2, pp 83-90, issn 0022-0248, 8 p.Conference Paper

Growth of B_xAl_1-xN layers using decaborane on SiC substratesNAKAJIMA, A; FURUKAWA, Y; YOKOYA, H et al.Journal of crystal growth. 2005, Vol 278, Num 1-4, pp 437-442, issn 0022-0248, 6 p.Conference Paper

Laplace-DLTS analysis of the minority carrier traps in the Cu(In,Ga)Se₂-based solar cellsZABIEROWSKI, P; EDOFF, M.Thin solid films. 2005, Vol 480-81, pp 301-306, issn 0040-6090, 6 p.Conference Paper