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Results 1 to 25 of 141

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High conductivity and supercurrent in superconductor-polymer-superconductor systemsIONOV, Alexander N; SVETLICHNYI, Valentin M; RENTZSCH, Rolf et al.Physica. B, Condensed matter. 2005, Vol 359-61, pp 506-508, issn 0921-4526, 3 p.Conference Paper

DLTS and admittance measurements on CdS/CdTe solar cellsVERSLUYS, J; CLAUWS, P; NOLLET, P et al.Thin solid films. 2003, Vol 431-32, pp 148-152, issn 0040-6090, 5 p.Conference Paper

Geometric effects on energy states of a hydrogenic impurity in multilayered spherical quantum dotBOZ, Figen Karaca; AKTAS, Saban; BILEKKAYA, Abdullah et al.Applied surface science. 2009, Vol 255, Num 13-14, pp 6561-6564, issn 0169-4332, 4 p.Article

Dilution effects in classical and quantum orbital systemsTANAKA, T; MATSUMOTO, M; ISHIHARA, S et al.Journal of magnetism and magnetic materials. 2007, Vol 310, Num 2, pp 804-806, issn 0304-8853, 3 p., 1Conference Paper

The role of confinement and shape on the binding energy of an electron in a quantum dotSUCU, S; MESE, A. I; OKAN, S. E et al.Physica. E, low-dimentional systems and nanostructures. 2008, Vol 40, Num 8, pp 2698-2702, issn 1386-9477, 5 p.Article

Nucleation and growth modes of ZnO deposited on 6H-SiC substratesASHRAFI, A. B. M. A; SEGAWA, Y; SHIN, K et al.Applied surface science. 2005, Vol 249, Num 1-4, pp 139-144, issn 0169-4332, 6 p.Article

Double kondo-lattice-like system in the ytterbium deuteridesDRULIS, Monika K; DRULIS, H.Journal of alloys and compounds. 2004, Vol 366, pp 9-14, issn 0925-8388, 6 p.Article

Optical and transport properties of chromium-doped CdSe and CdS0.67Se0.33 crystalsKASIYAN, V; DASHEVSKY, Z; SHNECK, R et al.Journal of crystal growth. 2006, Vol 290, Num 1, pp 50-55, issn 0022-0248, 6 p.Article

Trapping center parameters of TlGaSe2 layered crystalsYUKSEK, N. S; KAVAS, H; GASANLY, N. M et al.Physica. B, Condensed matter. 2004, Vol 344, Num 1-4, pp 249-254, issn 0921-4526, 6 p.Article

Trap levels in layered semiconductor Ga2SeSAYDINLI, A; GASANLY, N. M; AYTEKIN, S et al.Solid state communications. 2004, Vol 132, Num 12, pp 857-861, issn 0038-1098, 5 p.Article

Exciton photoluminescence, photoconductivity and absorption in GaSe0.9Te0.1 alloy crystalsMAMEDOV, G. M; KARABULUT, M; ERTAP, H et al.Journal of luminescence. 2009, Vol 129, Num 3, pp 226-230, issn 0022-2313, 5 p.Article

Monovacancy and substitutional defects in hexagonal silicon nanotubesKIM, Gunn; HONG, Suklyun.Solid state communications. 2009, Vol 149, Num 9-10, pp 408-411, issn 0038-1098, 4 p.Article

Spatial distribution of a hole localized on acceptor in deformed crystalMONAKHOV, A. M; SABLINA, N. I; AVERKIEV, N. S et al.Solid state communications. 2008, Vol 146, Num 9-10, pp 416-419, issn 0038-1098, 4 p.Article

Thermal dynamics of Au-Fe pair in siliconALI, Akbar; MAJID, Abdul.Solid state communications. 2008, Vol 148, Num 1-2, pp 50-54, issn 0038-1098, 5 p.Article

On the upper limit of thermal conductivity GaN crystalsDANILCHENKO, B. A; OBUKHOV, I. A; PASZKIEWICZ, T et al.Solid state communications. 2007, Vol 144, Num 3-4, pp 114-117, issn 0038-1098, 4 p.Article

Behavior of 3d-transition metals in different SiC polytypesJUSTO, J. F; MACHADO, W. V. M; ASSALI, L. V. C et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 378-381, issn 0921-4526, 4 p.Conference Paper

First-principle molecular dynamics study of bond disruption and formation in SiO2 upon irradiationBOERO, Mauro; OSHIYAMA, Atsushi; SILVESTRELLI, Pier Luigi et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 945-949, issn 0921-4526, 5 p.Conference Paper

Quantum dynamics of phonon assisted emission of carriers at deep level centersYASUI, Akira; UOZUMI, Takayuki; KAYANUMA, Yosuke et al.Solid state communications. 2004, Vol 130, Num 7, pp 495-499, issn 0038-1098, 5 p.Article

The effect of cation disorder on the structure of Sr2FeMoO6 double perovskiteKLENCSAR, Z; NEMETH, Z; HAKL, J et al.Journal of magnetism and magnetic materials. 2004, Vol 281, Num 1, pp 115-123, issn 0304-8853, 9 p.Article

Luminescence spectroscopy of Sn2P2S6 crystalsPOTUCEK, Z; BRYKNAR, Z; PTACEK, R et al.Ferroelectrics (Print). 2004, Vol 304, pp 1011-1015, issn 0015-0193, 5 p.Conference Paper

Impurity photoconductivity in SiGe/Si:B multi-quantum-well heterostructuresALESHKIN, V. Ya; ANTONOV, A. V; GAVRILENKO, V. I et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 1065-1068, issn 0921-4526, 4 p.Conference Paper

Transition metal impurities in 3C-SiC and 2H-SiCASSALI, L. V. C; MACHADO, W. V. M; JUSTO, J. F et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 116-120, issn 0921-4526, 5 p.Conference Paper

Evidence for a shallow muonium acceptor state in Ge-rich Cz ― Si1―xGexCARROLL, B. R; LICHTI, R. L; CELEBI, Y. G et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 5113-5116, issn 0921-4526, 4 p.Conference Paper

Trends on 3d transition metal impurities in diamondASSALI, L. V. C; MACHADO, W. V. M; JUSTO, J. F et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4515-4517, issn 0921-4526, 3 p.Conference Paper

GaAs thermal treatment with fullerenesMEKYS, Algirdas; STORASTA, Jurgis; SMILGA, Algirdas P et al.Materials science in semiconductor processing. 2008, Vol 11, Num 2, pp 63-69, issn 1369-8001, 7 p.Article

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