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Results 1 to 25 of 216

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Density functional study of TaSin (n = 1―3, 12) clusters adsorbed to graphene surfacePING GUO; LIN ZHENG; JI MING ZHENG et al.Applied surface science. 2011, Vol 258, Num 2, pp 705-710, issn 0169-4332, 6 p.Article

Defect-level pinning and shallow states of the muonium isotope of hydrogenLICHTI, R. L; CHOW, K. H; COX, S. F. J et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 5106-5109, issn 0921-4526, 4 p.Conference Paper

Point scatterers and resonances in low number of dimensionsGRANOT, Erel.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 31, Num 1, pp 13-16, issn 1386-9477, 4 p.Article

High conductivity and supercurrent in superconductor-polymer-superconductor systemsIONOV, Alexander N; SVETLICHNYI, Valentin M; RENTZSCH, Rolf et al.Physica. B, Condensed matter. 2005, Vol 359-61, pp 506-508, issn 0921-4526, 3 p.Conference Paper

DLTS and admittance measurements on CdS/CdTe solar cellsVERSLUYS, J; CLAUWS, P; NOLLET, P et al.Thin solid films. 2003, Vol 431-32, pp 148-152, issn 0040-6090, 5 p.Conference Paper

Geometric effects on energy states of a hydrogenic impurity in multilayered spherical quantum dotBOZ, Figen Karaca; AKTAS, Saban; BILEKKAYA, Abdullah et al.Applied surface science. 2009, Vol 255, Num 13-14, pp 6561-6564, issn 0169-4332, 4 p.Article

Dilution effects in classical and quantum orbital systemsTANAKA, T; MATSUMOTO, M; ISHIHARA, S et al.Journal of magnetism and magnetic materials. 2007, Vol 310, Num 2, pp 804-806, issn 0304-8853, 3 p., 1Conference Paper

The role of confinement and shape on the binding energy of an electron in a quantum dotSUCU, S; MESE, A. I; OKAN, S. E et al.Physica. E, low-dimentional systems and nanostructures. 2008, Vol 40, Num 8, pp 2698-2702, issn 1386-9477, 5 p.Article

Thermally stimulated currents in n-InS single crystalsGASANLY, N. M; AYDINLI, A; YUKSEK, N. S et al.Materials research bulletin. 2003, Vol 38, Num 4, pp 699-704, issn 0025-5408, 6 p.Article

The electrical activity of hydrogen and muonium in silicon at high temperaturesCOX, S. F. J; GIDOPOULOS, N; LORD, J. S et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 641-645, issn 0921-4526, 5 p.Conference Paper

Determination of trapping center parameters in Tl2In2S3Se layered single crystals by thermally stimulated current measurementsGULER, I; GASANLY, N. M.Physica. B, Condensed matter. 2009, Vol 404, Num 14-15, pp 2034-2038, issn 0921-4526, 5 p.Article

Optical and electrical characterization of high-quality P-doped ZnTe substratesYOSHINO, Kenji; YONETA, Minoru; YABE, Takayuki et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 254-257, issn 0921-4526, 4 p.Conference Paper

Nucleation and growth modes of ZnO deposited on 6H-SiC substratesASHRAFI, A. B. M. A; SEGAWA, Y; SHIN, K et al.Applied surface science. 2005, Vol 249, Num 1-4, pp 139-144, issn 0169-4332, 6 p.Article

Double kondo-lattice-like system in the ytterbium deuteridesDRULIS, Monika K; DRULIS, H.Journal of alloys and compounds. 2004, Vol 366, pp 9-14, issn 0925-8388, 6 p.Article

Optical and transport properties of chromium-doped CdSe and CdS0.67Se0.33 crystalsKASIYAN, V; DASHEVSKY, Z; SHNECK, R et al.Journal of crystal growth. 2006, Vol 290, Num 1, pp 50-55, issn 0022-0248, 6 p.Article

Trapping center parameters of TlGaSe2 layered crystalsYUKSEK, N. S; KAVAS, H; GASANLY, N. M et al.Physica. B, Condensed matter. 2004, Vol 344, Num 1-4, pp 249-254, issn 0921-4526, 6 p.Article

Trap levels in layered semiconductor Ga2SeSAYDINLI, A; GASANLY, N. M; AYTEKIN, S et al.Solid state communications. 2004, Vol 132, Num 12, pp 857-861, issn 0038-1098, 5 p.Article

Exciton photoluminescence, photoconductivity and absorption in GaSe0.9Te0.1 alloy crystalsMAMEDOV, G. M; KARABULUT, M; ERTAP, H et al.Journal of luminescence. 2009, Vol 129, Num 3, pp 226-230, issn 0022-2313, 5 p.Article

Luminescence properties of Sm3+-doped polycrystalline ZrO2LANGE, S; SILDOS, I; HARTMANOVA, M et al.Journal of non-crystalline solids. 2008, Vol 354, Num 35-39, pp 4380-4382, issn 0022-3093, 3 p.Conference Paper

Deep defect states in narrow band-gap semiconductorsMAHANTI, S. D; HOANG, Khang; AHMAD, Salameh et al.Physica. B, Condensed matter. 2007, Vol 401-02, pp 291-295, issn 0921-4526, 5 p.Conference Paper

A quantum-chemical study of oxygen-vacancy defects in PbTiO3crystalsSTASHANS, Arvids; SERRANO, Sheyla; MEDINA, Paul et al.Physica. B, Condensed matter. 2006, Vol 381, Num 1-2, pp 82-89, issn 0921-4526, 8 p.Article

Effect of annealing temperature on luminescence in Eu implanted GaNBODIOU, L; OUSSIF, A; BRAUD, A et al.Optical materials (Amsterdam). 2006, Vol 28, Num 6-7, pp 780-784, issn 0925-3467, 5 p.Conference Paper

Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTSNYAMHERE, Cloud; DEENAPANRAY, P. N. K; AURET, F. D et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 161-164, issn 0921-4526, 4 p.Conference Paper

Fermi level scan spectroscopy of gap states in Ge and Si-Ge alloys based on the kinetics of neutron transmutation dopingZABRODSKII, A. G; ALEKSEENKO, M. V.Physica. B, Condensed matter. 2006, Vol 376-77, pp 253-256, issn 0921-4526, 4 p.Conference Paper

Indirect magnetic exchange interaction mediated by bound Landau states in 2DESDAHAN, P.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 34, Num 1-2, pp 325-328, issn 1386-9477, 4 p.Conference Paper

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