Spin-flip Raman scattering studies of antimony-doped ZnSeDAVIES, J. J; WOLVERSON, D; ALIEV, G. N et al.Physica status solidi. B. Basic research. 2004, Vol 241, Num 3, pp 487-490, issn 0370-1972, 4 p.Conference Paper

Analysis of ground-state zero-field splitting for Mn²⁺ in hexagonal ZnS :Mn²⁺DIE DONG; XIAO-YU, Kuang; LU WEI et al.The Journal of physics and chemistry of solids. 2003, Vol 64, Num 11, pp 2121-2123, issn 0022-3697, 3 p.Article

Deep hole trap levels of Sb-doped ZnSe grown by MOVPEIDO, Toshiyuki; GOTO, Hideo.Journal of crystal growth. 2003, Vol 259, Num 3, pp 257-261, issn 0022-0248, 5 p.Article

Pressure behavior of Te isoelectronic centers in S-rich ZnS_1-xTe_x alloyLI, G. H; FANG, Z. L; SU, F. H et al.Physica status solidi. B. Basic research. 2003, Vol 235, Num 2, pp 401-406, issn 0370-1972, 6 p.Conference Paper

Ab initio modeling of N-H, P-H and As-H defects in ZnSeTORRES, V. J. B; COUTINHO, J; BRIDDON, P. R et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 272-274, issn 0921-4526, 3 p.Conference Paper

CdS_xTe_1-x: bulk vapour growth, twin formation and the electrical activity of twin boundariesDUROSE, K; YATES, A. J. W; SZCZERBAKOW, A et al.Journal of physics. D, Applied physics (Print). 2002, Vol 35, Num 16, pp 1997-2007, issn 0022-3727Article

Defect structure of Ge-doped CdTeFIEDERLE, M; BABENTSO, V; FRANCA, J et al.Journal of crystal growth. 2002, Vol 243, Num 1, pp 77-86, issn 0022-0248Article

Negatively charged donor centers in ultrathin ZnSe:N layersSTRAUF, S; MICHLER, P; GUTOWSKI, J et al.Physica status solidi. B. Basic research. 2002, Vol 229, Num 1, pp 245-250, issn 0370-1972Conference Paper

Lattice sites of phosphorus in ZnMnTe: A compensation studyVAN KHOI, L. E; KACZOR, P; KOWSKI, M et al.Physica status solidi. B. Basic research. 2002, Vol 229, Num 1, pp 287-290, issn 0370-1972Conference Paper

Difference in luminescence properties between Sm doped ZnS and Eu doped ZnSABIKO, Y; NAKAYAMA, N; AKIMOTO, K et al.Physica status solidi. B. Basic research. 2002, Vol 229, Num 1, pp 339-342, issn 0370-1972Conference Paper

Intrinsic defects of ZnS epitaxial layers grown by MOVPEYOSHINO, K; KOMAKI, H; PRETE, P et al.Physica status solidi. B. Basic research. 2002, Vol 229, Num 1, pp 351-354, issn 0370-1972Conference Paper

Quantum confined atoms of doped ZnO nanocrystalsBHARGAVA, R. N; CHHABRA, V; SOM, T et al.Physica status solidi. B. Basic research. 2002, Vol 229, Num 2, pp 897-901, issn 0370-1972Conference Paper

Spin selection rules in radiative and nonradiative recombination processes in bulk crystals and in thin films of II-VI compoundsGODLEWSKI, M; IVANOV, V. Yu; KHACHAPURIDZE, A et al.Physica status solidi. B. Basic research. 2002, Vol 229, Num 1, pp 533-542, issn 0370-1972Conference Paper

Metastable defect characterization in Cd_0.9Mn_0.1Te:InPLACZEK-POPKO, E; BECLA, P.Physica. B, Condensed matter. 2001, Vol 308-10, pp 954-957, issn 0921-4526Conference Paper

Defect identification by means of electric field gradient calculationLANY, S; OSTHEIMER, V; WOLF, H et al.Physica. B, Condensed matter. 2001, Vol 308-10, pp 980-984, issn 0921-4526Conference Paper

Simultaneous photo-excitation of Li acceptor and shallow donors in ZnSeNAKATA, H; YAMADA, K; ITAZAKI, Y et al.Physica. B, Condensed matter. 2001, Vol 302-03, pp 277-281, issn 0921-4526Conference Paper

The thermodynamics of codoping: how does it work?ZHANG, S. B; WEI, S.-H; YANFA YAN et al.Physica. B, Condensed matter. 2001, Vol 302-03, pp 135-139, issn 0921-4526Conference Paper

Photocurrent transients in presence of a double impurity in semi-insulating semiconductorsASHOUR, H; THOMAS, M; FARHAN, A et al.Physica status solidi. A. Applied research. 2000, Vol 178, Num 2, pp 755-763, issn 0031-8965Article

Growth of CdTe from Te excess solution and self-compensation of doped donorMOCHIZUKI, K.Journal of crystal growth. 2000, Vol 214-15, pp 9-13, issn 0022-0248Conference Paper

Ab initio energy calculation of nitrogen-related defects in ZnSeGUNDEL, S; ALBERT, D; NÜRNBERGER, J et al.Journal of crystal growth. 2000, Vol 214-15, pp 474-477, issn 0022-0248Conference Paper

Magneto-optics on p-type ZnSe epilayers : the dependence on the nitrogen doping concentrationGRAVIER, L; MAKINO, H; ARAI, K et al.Journal of crystal growth. 2000, Vol 214-15, pp 581-584, issn 0022-0248Conference Paper

Unusual combination repetitions of the zero phonon line of Ni acceptor excitons in ZnSe:Ni and ZnO:Ni due to photoinduced lattice vibrationsSOKOLOV, V. I; SHIROKOV, E. A; KISLOV, A. N et al.Journal of crystal growth. 2000, Vol 214-15, pp 304-307, issn 0022-0248Conference Paper

Nitrogen doping of MOVPE-grown ZnSe by hydrazine derivativesPOHL, U. W; GOTTFRIEDSEN, J; SCHUMANN, H et al.Journal of crystal growth. 2000, Vol 209, Num 4, pp 683-686, issn 0022-0248Article

Analysis of charge-transfer and charge-conserving optical transitions at vanadium ions in CdTeSELBER, H. R; PEKA, P; BIERNACKI, S. W et al.Semiconductor science and technology. 1999, Vol 14, Num 6, pp 521-527, issn 0268-1242Article

Role of the charge state of deep vanadium impurities and associations of defects in photoelectric and optical properties of semi-insulating CdTe crystalsJARASIÜNAS, K; BASTIENE, L; LAUNAY, J. C et al.Semiconductor science and technology. 1999, Vol 14, Num 1, pp 48-57, issn 0268-1242Article