Ab initio studies of electronic and optical properties of graphene and graphene―BN interfaceYELGEL, C; SRIVASTAVA, G. P.Applied surface science. 2012, Vol 258, Num 21, pp 8338-8342, issn 0169-4332, 5 p.Conference Paper

Electronic interface properties of silicon substrates after ozone based wet-chemical oxidation studied by SPV measurementsANGERMANN, Heike; WOLKE, Klaus; GOTTSCHALK, Christiane et al.Applied surface science. 2012, Vol 258, Num 21, pp 8387-8396, issn 0169-4332, 10 p.Conference Paper

Preparation, electronic structure, and photocatalytic properties of Bi₂O₂CO₃ nanosheetYUANYUAN LIU; ZEYAN WANG; BAIBIAO HUANG et al.Applied surface science. 2010, Vol 257, Num 1, pp 172-175, issn 0169-4332, 4 p.Article

Energy level alignment of catechol molecular orbitals on ZnO(1 1 2 0) and TiO₂(1 1 0) surfacesRANGAN, Sylvie; THEISEN, Jean-Patrick; BERSCH, Eric et al.Applied surface science. 2010, Vol 256, Num 15, pp 4829-4833, issn 0169-4332, 5 p.Conference Paper

Electronic structure of dysprosium silicide films grown on a Si(1 1 1) surfaceIMAI, Ayako; KAKUTA, Haruya; MAWATARI, Kenji et al.Applied surface science. 2009, Vol 256, Num 4, pp 1156-1159, issn 0169-4332, 4 p.Conference Paper

Electronic and atomic structure computation of disordered low index surfaces of γ-aluminaDYAN, Anthony; AZEVEDO, Christophe; CENEDESE, Pierre et al.Applied surface science. 2008, Vol 254, Num 13, pp 3819-3828, issn 0169-4332, 10 p.Article

Interface effects in spin-polarized metal/insulator layered structuresVELEV, J. P; DOWBEN, P. A; TSYMBAL, E. Y et al.Surface science reports. 2008, Vol 63, Num 9, pp 400-425, issn 0167-5729, 26 p.Article

Atomic orbitals and photoelectron intensity angular distribution patterns of MOS₂ valence bandJANOSFALVI, Zs; MATSUI, F; TAKAHASHI, N et al.Applied surface science. 2008, Vol 254, Num 23, pp 7679-7683, issn 0169-4332, 5 p.Conference Paper

Electron-phonon interaction effects on the surface states in wurtzite nitride semiconductorsYAN, Z. W; GENXIAO LI.Applied surface science. 2008, Vol 255, Num 3, pp 637-639, issn 0169-4332, 3 p.Conference Paper

The Na-adsorbed Ge(0 01) surface : Structure and STM image simulationsCZECH, Barbara; STANKIEWICZ, Barbara.Applied surface science. 2008, Vol 254, Num 14, pp 4279-4285, issn 0169-4332, 7 p.Conference Paper

The bulk band structure and inner potential of layered In₄Se₃JING LIU; LOSOVYJ, Ya. B; KOMESU, Takashi et al.Applied surface science. 2008, Vol 254, Num 14, pp 4322-4325, issn 0169-4332, 4 p.Conference Paper

Comparative study of the GaAs(1 0 0) surface cleaned by atomic hydrogenTOMKIEWICZ, P; WINKLER, A; SZUBER, J et al.Applied surface science. 2006, Vol 252, Num 21, pp 7647-7658, issn 0169-4332, 12 p.Conference Paper

Comparative photoemission study of the electronic properties of L-CVD SnO₂ thin filmsKWOKA, M; OTTAVIANO, L; PASSACANTANDO, M et al.Applied surface science. 2006, Vol 252, Num 21, pp 7734-7738, issn 0169-4332, 5 p.Conference Paper

The electronic and atomic structure of SrTiO₃, BaTiO₃, and PbTiO₃(001) surfaces : Ab initio DFT/HF hybrid calculationsPISKUNOV, S; KOTOMIN, E. A; HEIFETS, E et al.Microelectronic engineering. 2005, Vol 81, Num 2-4, pp 472-477, issn 0167-9317, 6 p.Article

Angle-resolved photoemission from surface statesKRASOVSKII, E. E; SCHATTKE, W.Physical review letters. 2004, Vol 93, Num 2, pp 027601.1-027601.4, issn 0031-9007Article

Band bending, electronic affinity and density of states at several (100) surfaces of boron-doped homoepitaxial diamond thin filmsMURET, Pierre; SABY, Christophe.Semiconductor science and technology. 2004, Vol 19, Num 1, pp 1-7, issn 0268-1242, 7 p.Article

Electronic structure of a two-dimensional alloy: Sn-Pb-Si on Si(111)DI TEODORO, C; RESSEL, B; PRINCE, K. C et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 21, pp 3507-3516, issn 0953-8984, 10 p.Article

Investigation of surface properties of Si-doped GaN films by electric force microscopy and photoluminescenceLIN, T. Y; SU, W. S; CHEN, Y. F et al.Solid state communications. 2004, Vol 130, Num 1-2, pp 49-52, issn 0038-1098, 4 p.Article

Photoluminescence of F-passivated ZnO nanocrystalline films made from thermally oxidized ZnF₂ filmsXU, H. Y; LIU, Y. C; MA, J. G et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 28, pp 5143-5150, issn 0953-8984, 8 p.Article

XPS and XAES studies of as grown and nitrogen incorporated tetrahedral amorphous carbon films deposited by pulsed unfiltered cathodic vacuum arc processPANWAR, O. S; APARNA, Y; SHIVAPRASAD, S. M et al.Applied surface science. 2004, Vol 221, Num 1-4, pp 392-401, issn 0169-4332, 10 p.Article

High-resolution photoemission mapping of the three-dimensional band structure of Bi(111)AST, Christian R; HÖCHST, Hartmut.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 24, pp 245122.1-245122.8, issn 1098-0121Article

Role of spin in quasiparticle interferencePASCUAL, J. I; BIHLMAYER, G; HOFMANN, Ph et al.Physical review letters. 2004, Vol 93, Num 19, pp 196802.1-196802.4, issn 0031-9007Article

Temperature invariance of InN electron accumulationPIPER, L. F. J; VEAL, T. D; MAHBOOB, I et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 11, pp 115333.1-115333.6, issn 1098-0121Article

Valence-band electronic structure of ZnSe(001) thin films: Theory and experimentPLUCINSKI, L; JOHNSON, R. L; FLESZAR, A et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 12, pp 125308.1-125308.10, issn 1098-0121Article

Dynamics of image-potential states on stepped Cu(001) surfacesROTH, M; PICKEL, M; WEINELT, M et al.Applied physics. A, Materials science & processing (Print). 2004, Vol 78, Num 2, pp 149-153, issn 0947-8396, 5 p.Article