Effects of hydrogen treatment on ohmic contacts to p-type GaN filmsHUANG, Bohr-Ran; CHOU, Chia-Hui; KE, Wen-Cheng et al.Applied surface science. 2011, Vol 257, Num 17, pp 7490-7493, issn 0169-4332, 4 p.Article

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Work function engineering and its applications in ohmic contact fabrication to II-VI semiconductorsGHOSH, B.Applied surface science. 2008, Vol 254, Num 15, pp 4908-4911, issn 0169-4332, 4 p.Article

Width-dependent anomalous CoSi_x sheet resistance change by Ti and TiN capping processCHEN, Yen-Ming; TU, George C; WANG, Ying-Lang et al.Thin solid films. 2006, Vol 498, Num 1-2, pp 282-285, issn 0040-6090, 4 p.Conference Paper

Effect of Au overlayer on PtSi ohmic contacts with n-InPHUANG, W. C.Applied surface science. 2005, Vol 245, Num 1-4, pp 141-148, issn 0169-4332, 8 p.Article

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Carrier transport mechanism of Pd/Pt/Au ohmic contacts to p-GaN in InGaN laser diodeJOON SEOP KWAK; CHO, J; CHAE, S et al.Physica status solidi. A. Applied research. 2002, Vol 194, Num 2, pp 587-590, issn 0031-8965, 4 p.Conference Paper

Effects of surface treatment using aqua regia solution on the change of surface band bending of p-type GaNJONG KYU KIM; KIM, Ki-Jeong; KIM, Bongsoo et al.Journal of electronic materials. 2001, Vol 30, Num 3, pp 129-133, issn 0361-5235Article

Ohmic performance of ZnO and ITO/ZnO contacted with n-type GaN layerTANG, Bang-Tai; YU, Qing-Xuan; LEE, Hsin-Ying et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2001, Vol 82, Num 1-3, pp 259-261, issn 0921-5107Article

PdGe-based ohmic contacts to high-low doped n-GaAs with and without undoped cap layerLIM, J.-W; MUN, J.-K; SUNGUN NAM et al.Journal of physics. D, Applied physics (Print). 2000, Vol 33, Num 13, pp 1611-1614, issn 0022-3727Article

Effects of injection current pulses on magnetic domain switching in stable electrodeposited 10 nm Ni contactsGARCIA, N; SAVELIEV, I. G; ZHAO, Y.-W et al.Journal of magnetism and magnetic materials. 2000, Vol 214, Num 1-2, pp 7-12, issn 0304-8853Article

Electrification of an elastic sphere by repeated impacts on a metal plateMATSUSAKA, Shuji; GHADIRI, Mojtaba; MASUDA, Hiroaki et al.Journal of physics. D, Applied physics (Print). 2000, Vol 33, Num 18, pp 2311-2319, issn 0022-3727Article

Conductance histograms and conducting channels in atomic-scale metallic contactsLOPEZ-CIUDAD, T; GARCIA-MARTIN, A; CAAMANO, A. J et al.Surface science. 1999, Vol 440, Num 3, pp L887-L890, issn 0039-6028Article

Giant magnetoresistance of Co/Au multilayer point contactsWELLOCK, K; CARO, J; HICKEY, B. J et al.Journal of magnetism and magnetic materials. 1999, Vol 198-99, pp 27-29, issn 0304-8853Conference Paper

W and W/WSi/In_1-xAl_xN ohmic contacts to n-type GaNZEITOUNY, A; EIZENBERG, M; PEARTON, S. J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 59, Num 1-3, pp 358-361, issn 0921-5107Conference Paper

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Doping profiles for indium antimonide magnetoresistorsPARTIN, D. L; HEREMANS, J; THRUSH, C. M et al.Sensors and actuators. A, Physical. 1998, Vol 69, Num 1, pp 39-45, issn 0924-4247Article