Object size effect on the contact potential difference measured by scanning Kelvin probe methodPOLYAKOV, B; KRUTOKHVOSTOV, R; KUZMIN, A et al.EPJ. Applied physics (Print). 2010, Vol 51, Num 2, issn 1286-0042, 21201.p1-21210.p5Article

Break conductance of noble metal contactsFUJII, Akihiro; TSUTSUI, Makusu; KUROKAWA, Shu et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 4, pp 045407.1-045407.6, issn 1098-0121Article

An accurate calculation of spreading resistanceDENHOFF, M. W.Journal of physics. D, Applied physics (Print). 2006, Vol 39, Num 9, pp 1761-1765, issn 0022-3727, 5 p.Article

Issues of contact etching and pre-treatment in Schottky contactLEE, Haksun; SHIN, Kyoungsub; CHO, Nammyun et al.Thin solid films. 2009, Vol 517, Num 14, pp 3844-3846, issn 0040-6090, 3 p.Conference Paper

Minimization of contact resistance between metal and polymer by surface dopingMUKHERJEE, A. K; THAKUR, A. K; TAKASHIMA, W et al.Journal of physics. D, Applied physics (Print). 2007, Vol 40, Num 6, pp 1789-1793, issn 0022-3727, 5 p.Article

The Unusual Mechanism of Partial Fermi Level Pinning at Metal-MoS₂ InterfacesCHENG GONG; COLOMBO, Luigi; WADACE, Robert M et al.Nano letters (Print). 2014, Vol 14, Num 4, pp 1714-1720, issn 1530-6984, 7 p.Article

Electrical characterization of organic solar cell contact degradation resulting from ambient exposureSTREET, Robert A; KHLYABICH, Petr P; THOMPSON, Barry C et al.Organic electronics (Print). 2013, Vol 14, Num 11, pp 2932-2939, issn 1566-1199, 8 p.Article

Enhancing the efficiency of dye sensitized solar cells with an SnO₂ blocking layer grown by nanocluster depositionDUONG, Thanh-Tung; CHOI, Hyung-Jin; HE, Qi-Jin et al.Journal of alloys and compounds. 2013, Vol 561, pp 206-210, issn 0925-8388, 5 p.Article

Estimation of film-electrode contact resistance and domain switching time from ferroelectric polarization-voltage hysteresis loopsJIANG, A. Q; ZHANG, D. W.Thin solid films. 2013, Vol 545, pp 145-148, issn 0040-6090, 4 p.Article

High Performance Multilayer MoS₂ Transistors with Scandium ContactsDAS, Saptarshi; CHEN, Hong-Yan; PENUMATCHA, Ashish Verma et al.Nano letters (Print). 2013, Vol 13, Num 1, pp 100-105, issn 1530-6984, 6 p.Article

Intra-wire resistance and AC loss in multi-filamentary MgB₂ wiresZHOU, C; OFFRINGA, W; TEN KATE, H. H. J et al.Superconductor science & technology (Print). 2013, Vol 26, Num 2, issn 0953-2048, 025002.1-025002.6Article

Advancement of system designs and key engineering technologies for materials-based hydrogen storageVAN HASSEL, Bart A; GORBOUNOV, M; HOLOWCZAK, J et al.Journal of alloys and compounds. 2013, Vol 580, issn 0925-8388, S337-S342, SUP1Conference Paper

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Corrosion and electrical properties of CrN- and TiN-coated 316L stainless steel used as bipolar plates for polymer electrolyte membrane fuel cellsLEE, S. H; KAKATI, N; MAITI, J et al.Thin solid films. 2013, Vol 529, pp 374-379, issn 0040-6090, 6 p.Conference Paper

Kinetics, Stability, and Thermal Contact Resistance of Nickel―Ca₃Co₄O₉ Interfaces Formed by Spark Plasma SinteringHOLGATE, T. C; WU, N; SØNDERGAARD, M et al.Journal of electronic materials. 2013, Vol 42, Num 7, pp 1661-1668, issn 0361-5235, 8 p.Conference Paper

Small Hysteresis Nanocarbon-Based Integrated Circuits on Flexible and Transparent Plastic SubstrateWOO JONG YU; SI YOUNG LEE; SANG HOON CHAE et al.Nano letters (Print). 2011, Vol 11, Num 3, pp 1344-1350, issn 1530-6984, 7 p.Article

Investigation of nano patches in Ni/n-Si micro Schottky diodes with new aspectYEGANEH, M; RAHMATALLAHPUR, Sh; MAMEDOV, R. K et al.Materials science in semiconductor processing. 2011, Vol 14, Num 3-4, pp 266-273, issn 1369-8001, 8 p.Article

The effect of annealing on amorphous indium gallium zinc oxide thin film transistorsBAE, Hyeon-Seok; KWON, Jae-Hong; CHANG, Seongpil et al.Thin solid films. 2010, Vol 518, Num 22, pp 6325-6329, issn 0040-6090, 5 p.Article

Effect of interfacial layer and series resistance on electrical characteristics for the PtSi/p-SiNWs Schottky diodeMEIGUANG ZHU; JIAN ZHANG; ZHILIANG WANG et al.Physica. E, low-dimentional systems and nanostructures. 2010, Vol 43, Num 1, pp 515-520, issn 1386-9477, 6 p.Article

Formation and performance of ohmic contact electrodes on BaTiO₃-based thermistors by localized electroless Cu-platingLIU, B. S; ZHANG, F. M; YANG, X. Y et al.Thin solid films. 2010, Vol 519, Num 1, pp 373-377, issn 0040-6090, 5 p.Article

Probing of contact formation via light emission from organic field-effect transistorsFELDMEIER, Eva J; SCHIDLEJA, Martin; MELZER, Christian et al.Thin solid films. 2010, Vol 519, Num 5, pp 1506-1510, issn 0040-6090, 5 p.Conference Paper

Selective epitaxial silicon growth in high aspect ratio contact on 70 nm node flash memoryHO, Ching-Yuan; HE, Jr-Hau; CHANG, Yuan-Pul et al.Thin solid films. 2009, Vol 517, Num 24, pp 6850-6852, issn 0040-6090, 3 p.Article

Analytic model for organic thin film transistors (OTFTs): effect of contact resistances application to the octithiopheneMANSOURI, S; MAHDOUANI, M; OUDIR, A et al.EPJ. Applied physics (Print). 2009, Vol 48, Num 3, issn 1286-0042, 30401.p1-30401.p10Article

Current-Induced Degradation of Nickel Ohmic Contacts to SiCDOWNEY, B. P; FLEMISH, J. R; LIU, B. Z et al.Journal of electronic materials. 2009, Vol 38, Num 4, pp 563-568, issn 0361-5235, 6 p.Article

Low-resistance and highly transparent Ag/IZO ohmic contact to p-type GaNKIM, Han-Ki; YI, Min-Su; LEE, Sung-Nam et al.Thin solid films. 2009, Vol 517, Num 14, pp 4039-4042, issn 0040-6090, 4 p.Conference Paper