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Measuring the electronic structure of disordered overlayers by electron momentum spectroscopy : the Cu/Si interfaceNIXON, K. L; VOS, M; BOWLES, C et al.Surface and interface analysis. 2006, Vol 38, Num 8, pp 1236-1241, issn 0142-2421, 6 p.Article
Direct observation of nanoscale switching centers in metal/molecule/ metal structuresCHUN NING LAU; STEWART, Duncan R; WILLIAMS, R. Stanley et al.Nano letters (Print). 2004, Vol 4, Num 4, pp 569-572, issn 1530-6984, 4 p.Article
Electronic structure and electrical properties of interfaces between metals and π-conjugated molecular filmsKAHN, Antoine; KOCH, Norbert; WEIYING GAO et al.Journal of polymer science. Part B. Polymer physics. 2003, Vol 41, Num 21, pp 2529-2548, issn 0887-6266, 20 p.Article
The electrodeposition of metal at metal/carbon nanotube junctionsAUSTIN, Derek W; PURETZKY, Alex A; GEOHEGAN, David B et al.Chemical physics letters. 2002, Vol 361, Num 5-6, pp 525-529, issn 0009-2614, 5 p.Article
Preparation of ohmic n-type cubic boron nitride contactsCHENGXIN WANG; HONGWU LIU; XUN LI et al.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 44, pp 10937-10940, issn 0953-8984, 4 p.Conference Paper
Surface-enhanced Raman analysis of diamond films using different metalsHUANG, B. R; CHEN, K. H; KE, W. Z et al.Materials letters (General ed.). 2000, Vol 42, Num 3, pp 162-165, issn 0167-577XArticle
On the nature of transition layer and heat tolerance of TiBx/GaAs-based contactsDMITRUK, N. L; ERMOLOVICH, I. B; IVANOV, V. N et al.Applied surface science. 2000, Vol 166, pp 520-525, issn 0169-4332Conference Paper
Propriétés électriques de contacts Schottky sur alliages SiGe et SiGeC = Electrical properties of Schottky contacts on SiGe and SiGeC alloysBarthula, Marc; Meyer, Françoise.2000, 206 p.Thesis
Laser and thermal annealing effects on the optical properties of n-GaAs [100] crystals : Application to its Schottky diodesKHAN, W. I; MAKDISI, Y; MARAFI, M et al.Physica status solidi. A. Applied research. 2000, Vol 181, Num 2, pp 551-559, issn 0031-8965Article
Calculation of ohmic contact resistance at a metal/silicon interfaceKIKUCHI, A.Physica status solidi. A. Applied research. 1999, Vol 175, Num 2, pp 623-629, issn 0031-8965Article
Determination of the electron mean free path in the 1-1.8 eV energy range in thin gold layers using ballistic electron emission microscopyCORATGER, R; GIRARDIN, C; PECHOU, R et al.EPJ. Applied physics (Print). 1999, Vol 5, Num 3, pp 237-242, issn 1286-0042Article
Electrical properties of thin-films of the mixed ionic-electronic conductor CuBr : Influence of electrode metals and gaseous ammoniaLAUQUE, P; BENDAHAN, M; SEGUIN, J.-L et al.Journal of the European Ceramic Society. 1999, Vol 19, Num 6-7, pp 823-826, issn 0955-2219Conference Paper
Metal contacts to n-type GaN : III-V nitrides and silicon carbideSCHMITZ, A. C; PING, A. T; KHAN, M. A et al.Journal of electronic materials. 1998, Vol 27, Num 4, pp 255-260, issn 0361-5235Article
Thermally stable Pd/Sn and Pd/Sn/Au ohmic contacts to n-type GaAsISLAM, M. S; MCNALLY, P. J.Thin solid films. 1998, Vol 320, Num 2, pp 253-259, issn 0040-6090Article
Electrical properties of nanosized non-barrier inhomogeneities in Zn-based metal-semiconductor contacts to InPCLAUSEN, T; LEISTIKO, O.Applied surface science. 1998, Vol 123-24, pp 567-570, issn 0169-4332Conference Paper
Schottky contact of zinc on p-germaniumPATEL, K. K; PATEL, K. D; SRIVASTAVA, R et al.Bulletin of materials science. 1997, Vol 20, Num 8, pp 1079-1083, issn 0250-4707Article
Pd-based ohmic contacts to n-GaSbVARBLIANSKA, K; TZENEV, K; KOTSINOV, T et al.Physica status solidi. A. Applied research. 1997, Vol 163, Num 2, pp 387-393, issn 0031-8965Article
Reverse I-V characteristics of Au/semi-insulating GaAs(100)LUO, Y. L; CHEN, T. P; FUNG, S et al.Solid state communications. 1997, Vol 101, Num 9, pp 715-720, issn 0038-1098Article
Some properties of the contact of metals with liquid dielectricsRYCHKOV, Yu. M; KROPOCHEVA, L. V; ESIPOK, A. V et al.Journal of engineering physics and thermophysics. 1997, Vol 70, Num 6, pp 966-969, issn 1062-0125Article
Effect of diffusion processes on the contact melting of metallization layers in Si-Sia(Gea)-Al structuresORLOV, A. M; KOSTISHKO, B. M; SKVORTSOV, A. A et al.Inorganic materials. 1996, Vol 32, Num 3, pp 246-249, issn 0020-1685Article
Investigation of the silicon-plasma silicon nitride interface with in situ transient photoconductivity measurementsELMIGER, J. R; KUNST, M.Applied surface science. 1996, Vol 103, Num 1, pp 11-18, issn 0169-4332Article
Reactively sputtered titanium nitride Schottky contacts on n-GaAs and their thermal stabilityEFTEKHARI, G.Semiconductor science and technology. 1996, Vol 11, Num 3, pp 285-288, issn 0268-1242Article
Low contact-resistance and shallow Pd/Ge ohmic contacts to n-In0.53Ga0.47As on InP substrate formed by rapid thermal annealingYEH, Y.-H; LAI, J.-T; LEE, J. Y.-M et al.Japanese journal of applied physics. 1996, Vol 35, Num 12A, pp L1569-L1571, issn 0021-4922, 2Article
Chemical trends of barrier heights in metal-semiconductor contacts : on the theory of the slope parameterMÖNCH, W.Applied surface science. 1996, Vol 92, Num 1-4, pp 367-371, issn 0169-4332Conference Paper
Electrical properties of metal/Si1-xGex/Si(100) heterojunctionsSHINODA, H; KOSAKA, M; KOJIMA, J et al.Applied surface science. 1996, Vol 100-01, pp 526-529, issn 0169-4332Conference Paper