Electrical characteristics of polycrystalline Si layers embedded into high-k Al₂O₃ gate layersPARK, Byoungjun; CHO, Kyoungah; KIM, Sangsig et al.Applied surface science. 2008, Vol 254, Num 23, pp 7905-7908, issn 0169-4332, 4 p.Conference Paper

Study and applications of plasma-modified Si and porous Si surfacesGABOUZE, N; BENZEKKOUR, N; MAHMOUDI, Be et al.Applied surface science. 2008, Vol 254, Num 12, pp 3648-3652, issn 0169-4332, 5 p.Conference Paper

Reduction of the annealing temperature of radiation-induced defects in ion-implanted MOS structuresKASCHIEVA, S; DMITRIEV, S. N; SKORUPA, W et al.Applied physics. A, Materials science & processing (Print). 2004, Vol 78, Num 4, pp 607-610, issn 0947-8396, 4 p.Article

Stable room-temperature molecular negative differential resistance based on molecule-electrode interface chemistrySALOMON, Adi; ARAD-YELLIN, Rina; SHANZER, Abraham et al.Journal of the American Chemical Society. 2004, Vol 126, Num 37, pp 11648-11657, issn 0002-7863, 10 p.Article

Bonding structures of silicon oxynitride prepared by oxidation of Si-rich silicon nitridePOON, M. C; KOK, C. W; WONG, H et al.Thin solid films. 2004, Vol 462-63, pp 42-45, issn 0040-6090, 4 p.Conference Paper

Do aviram-ratner diodes rectify?STOKBRO, Kurt; TAYLOR, Jeremy; BRANDBYGE, Mads et al.Journal of the American Chemical Society. 2003, Vol 125, Num 13, pp 3674-3675, issn 0002-7863, 2 p.Article

Elimination of interface states in the GaAs band-gap by cyanide treatment: XPS measurements under biasKUBOTA, Tomohiro; IVANCO, Jan; TAKAHASHI, Masao et al.Surface science. 2003, Vol 529, Num 3, pp 329-337, issn 0039-6028, 9 p.Article

Energy band alignment of injector/insulator heterojunctionsHOFFMAN, R. L; WAGER, J. F.Thin solid films. 2003, Vol 436, Num 2, pp 286-291, issn 0040-6090, 6 p.Article

Silicon-on-insulator based thin-film resistor for chemical and biological sensor applicationsNIKOLAIDES, Michael G; RAUSCHENBACH, Stephan; LUBER, Sebastian et al.ChemPhysChem (Print). 2003, Vol 4, Num 10, pp 1104-1106, issn 1439-4235, 3 p.Article

Comparison between post-irradiation annealing and post-high electric field stress annealing of n-channel power VDMOSFETsRISTIC, Goran S; PEJOVIC, Momcilo M; JAKSIC, Aleksandar B et al.Applied surface science. 2003, Vol 220, Num 1-4, pp 181-185, issn 0169-4332, 5 p.Article

Cryogenic operation of surface-channel diamond field-effect transistorsISHIZAKA, Hiroaki; TACHIKI, Minoru; SONG, Kwang-Soup et al.Diamond and related materials. 2003, Vol 12, Num 10-11, pp 1800-1803, issn 0925-9635, 4 p.Article

Study and improvement of interfacial properties in a MIS structure based on p-type InPCHELLALI, M; TIZI, S; BENAMARA, Z et al.Vacuum. 2003, Vol 72, Num 2, pp 123-127, issn 0042-207X, 5 p.Article

Rashba splitting in MIS structures based on narrow gap semiconductors: Positive and negative gapRADANTSEV, V. F.Journal of superconductivity. 2003, Vol 16, Num 4, pp 635-645, issn 0896-1107, 11 p.Article

Electron transport in InGaO₃(ZnO)_m (m=integer) studied using single-crystalline thin films and transparent MISFETsNOMURA, Kenji; OHTA, Hiromichi; UEDA, Kazushige et al.Thin solid films. 2003, Vol 445, Num 2, pp 322-326, issn 0040-6090, 5 p.Conference Paper

Study and characterization of the structures Au/Al₂O₃/Si and Au/Al⁰/Al₂O₃/SiGRUZZA, B; AKKAL, B; BIDEUX, L et al.Vacuum. 2002, Vol 67, Num 1, pp 125-129, issn 0042-207X, 5 p.Conference Paper

Current and capacitance characteristics of a metal-insulator-semiconductor structure with an ultrathin oxide layerFU, Y; WILLANDER, M; LUNDGREN, P et al.Superlattices and microstructures. 2001, Vol 30, Num 2, pp 53-60, issn 0749-6036Article

Microstructural and electrical properties of MgO thin films grown on p-InP (100) substrates at low temperatureKIM, T. W; YOU, Y. S.Applied surface science. 2001, Vol 180, Num 1-2, pp 162-167, issn 0169-4332Article

Photo-induced charge transport in SiO₂ films containing Si nanocrystalsCHOI, Suk-Ho.Superlattices and microstructures. 2001, Vol 29, Num 3, pp 239-245, issn 0749-6036Article

Quantum Monte Carlo simulation of the triangular lattice in the repulsive Hubbard modelREFOLIO, M. C; LOPEZ SANCHO, J. M; RUBIO, J et al.Surface science. 2001, Vol 482-85, pp 632-639, issn 0039-6028, 1Conference Paper

Correlation between interface state properties and electron transport at ultrathin insulator/Si interfacesSHIOZAWA, T; YOSHIDA, T; HASHIZUME, T et al.Applied surface science. 2000, Vol 159-60, pp 98-103, issn 0169-4332Conference Paper

Conducting atomic force microscopy studies on local electrical properties of ultrathin SiO₂ filmsANDO, A; HASUNUMA, R; MAEDA, T et al.Applied surface science. 2000, Vol 162-63, pp 401-405, issn 0169-4332Conference Paper

In situ UHV contactless C-V and XPS characterization of surface passivation process for InP using a partially nitrided Si interface control layerTAKAHASHI, Hiroshi; HASEGAWA, Hideki.Applied surface science. 2000, Vol 166, pp 526-531, issn 0169-4332Conference Paper

Characterisation of the BaTiO₃/p-Si interface and applicationsEVANGELOU, E. K; KONOFAOS, N; CRAVEN, M. R et al.Applied surface science. 2000, Vol 166, pp 504-507, issn 0169-4332Conference Paper

Violet and orange luminescence from Ge-implanted SiO₂ layersLEE, W. S; JEONG, J. Y; KIM, H. B et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 69-70, pp 474-478, issn 0921-5107Conference Paper

Effect of InSb layer on the interfacial and electrical properties in the structures based on InPCHELLALI, M; AKKAL, B; TIZI, S et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 77, Num 1, pp 19-23, issn 0921-5107Article