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Temperature dependence of electrical properties of Ga-doped ZnO films deposited by ion plating with DC arc dischargeTERASAKO, T; SONG, H; MAKINO, H et al.Thin solid films. 2013, Vol 528, pp 19-25, issn 0040-6090, 7 p.Conference Paper

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Effect of Post-Deposition Processing on ZnO Thin Films and DevicesTINGFANG YEN; HAUNGS, Alan; SUNG JIN et al.Journal of electronic materials. 2010, Vol 39, Num 5, pp 568-572, issn 0361-5235, 5 p.Article

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Donor-like defects in ZnO substrate materials and ZnO thin films : ZnO and Related CompoundsVON WENCKSTERN, H; BRANDT, M; SCHMIDT, H et al.Applied physics. A, Materials science & processing (Print). 2007, Vol 88, Num 1, pp 135-139, issn 0947-8396, 5 p.Article

Weak localization and electron-electron interaction effects in indium zinc oxide filmsSHINOZAKI, Bunju; MAKISE, Kazumasa; SHIMANE, Yukio et al.Journal of the Physical Society of Japan. 2007, Vol 76, Num 7, issn 0031-9015, 074718.1-074718.6Article

Structural and magneto-transport characterization of Co₂Cr_xFe_1-xAl heusler alloy filmsRATA, A. D; BRAAK, H; BÜRGLER, D. E et al.The European physical journal. B, Condensed matter physics. 2006, Vol 52, Num 4, pp 445-451, issn 1434-6028, 7 p.Article

Properties of Sr₂FeMoO₆ thin films fabricated by the chemical solution deposition methodYAMAGUCHI, Toshiaki; SUWAKI, Hironori; KIKUTA, Koichi et al.Solid state communications. 2005, Vol 133, Num 2, pp 71-75, issn 0038-1098, 5 p.Article

Strain-induced properties of epitaxial VO_x thin filmsRATA, A. D; HIBMA, T.The European physical journal. B, Condensed matter physics. 2005, Vol 43, Num 2, pp 195-200, issn 1434-6028, 6 p.Article

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Ferroelectric enhancement of La-doped BaTiO₃ thin films using SrTiO₃ buffer layerALI, Ahmed I; KIBOG PARK; ULLAH, Amir et al.Thin solid films. 2014, Vol 551, pp 127-130, issn 0040-6090, 4 p.Article

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Effect of inserting a buffer layer on the characteristics of transparent conducting impurity-doped ZnO thin films prepared by dc magnetron sputteringNOMOTO, Jun-Ichi; ODA, Jun-Ichi; MIYATA, Toshihiro et al.Thin solid films. 2010, Vol 519, Num 5, pp 1587-1593, issn 0040-6090, 7 p.Conference Paper

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Annealing in water vapor as a new method for improvement of silicon thin film propertiesHONDA, S; FEJFAR, A; KOCKA, J et al.Journal of non-crystalline solids. 2006, Vol 352, Num 9-20, pp 955-958, issn 0022-3093, 4 p.Conference Paper

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