kw.\*:("7350J")
Results 1 to 25 of 69
Selection :
Exploration of the inherent magnetoresistance in InSb thin filmsTONG ZHAN; HARRIS, J. J; BRANFORD, W. R et al.Semiconductor science and technology. 2006, Vol 21, Num 12, pp 1543-1546, issn 0268-1242, 4 p.Article
Conductivity of silicon inversion layers : Comparison with and without an in-plane magnetic fieldTSUI, Yeekin; VITKALOV, S. A; SARACHIK, M. P et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 11, pp 113308.1-113308.3, issn 1098-0121Article
Magnetoresistance anomalies in (Ga,Mn)As epilayers with perpendicular magnetic anisotropyXIANG, G; HOLLEITNER, A. W; SHEU, B. L et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 24, pp 241307.1-241307.4, issn 1098-0121Article
Effect of growth interruption on the crystalline quality and electrical properties of Ga-doped ZnO thin film deposited on quartz substrate by magnetron sputteringLEE, Geun-Hyoung.Thin solid films. 2013, Vol 534, pp 282-285, issn 0040-6090, 4 p.Article
Temperature dependence of electrical properties of Ga-doped ZnO films deposited by ion plating with DC arc dischargeTERASAKO, T; SONG, H; MAKINO, H et al.Thin solid films. 2013, Vol 528, pp 19-25, issn 0040-6090, 7 p.Conference Paper
Preparation of Al-doped ZnO transparent electrodes suitable for thin-film solar cell applications by various types of magnetron sputtering depositionsNOMOTO, Jun-Ichi; HIRANO, Tomoyasu; MIYATA, Toshihiro et al.Thin solid films. 2011, Vol 520, Num 5, pp 1400-1406, issn 0040-6090, 7 p.Conference Paper
Effect of Post-Deposition Processing on ZnO Thin Films and DevicesTINGFANG YEN; HAUNGS, Alan; SUNG JIN et al.Journal of electronic materials. 2010, Vol 39, Num 5, pp 568-572, issn 0361-5235, 5 p.Article
Numerical and analytic results for the macroscopic magneto-transport of three-dimensional periodic compositesSTRELNIKER, Yakov M; BERGMAN, David J.Journal of magnetism and magnetic materials. 2009, Vol 321, Num 7, pp 814-817, issn 0304-8853, 4 p.Conference Paper
Control of carrier concentration and surface flattening of CuGaO2 epitaxial films for a p-channel transparent transistorMINE, Takashi; YANAGI, Hiroshi; NOMURA, Kenji et al.Thin solid films. 2008, Vol 516, Num 17, pp 5790-5794, issn 0040-6090, 5 p.Conference Paper
Donor-like defects in ZnO substrate materials and ZnO thin films : ZnO and Related CompoundsVON WENCKSTERN, H; BRANDT, M; SCHMIDT, H et al.Applied physics. A, Materials science & processing (Print). 2007, Vol 88, Num 1, pp 135-139, issn 0947-8396, 5 p.Article
Weak localization and electron-electron interaction effects in indium zinc oxide filmsSHINOZAKI, Bunju; MAKISE, Kazumasa; SHIMANE, Yukio et al.Journal of the Physical Society of Japan. 2007, Vol 76, Num 7, issn 0031-9015, 074718.1-074718.6Article
Structural and magneto-transport characterization of Co2CrxFe1-xAl heusler alloy filmsRATA, A. D; BRAAK, H; BÜRGLER, D. E et al.The European physical journal. B, Condensed matter physics. 2006, Vol 52, Num 4, pp 445-451, issn 1434-6028, 7 p.Article
Properties of Sr2FeMoO6 thin films fabricated by the chemical solution deposition methodYAMAGUCHI, Toshiaki; SUWAKI, Hironori; KIKUTA, Koichi et al.Solid state communications. 2005, Vol 133, Num 2, pp 71-75, issn 0038-1098, 5 p.Article
Strain-induced properties of epitaxial VOx thin filmsRATA, A. D; HIBMA, T.The European physical journal. B, Condensed matter physics. 2005, Vol 43, Num 2, pp 195-200, issn 1434-6028, 6 p.Article
Magnetic and magnetooptical properties of nanoheterostructures containing FeNi and SiC layersBURAVTSOVA, V. E; GAN'SHINA, E. A; GUSCHIN, Vs et al.Microelectronic engineering. 2003, Vol 69, Num 2-4, pp 279-282, issn 0167-9317, 4 p.Conference Paper
Ferroelectric enhancement of La-doped BaTiO3 thin films using SrTiO3 buffer layerALI, Ahmed I; KIBOG PARK; ULLAH, Amir et al.Thin solid films. 2014, Vol 551, pp 127-130, issn 0040-6090, 4 p.Article
Structural and optoelectronic properties of Al-doped zinc oxide films deposited on flexible substrates by radio frequency magnetron sputteringTSENG, C. H; HUANG, C. H; CHANG, H. C et al.Thin solid films. 2011, Vol 519, Num 22, pp 7959-7965, issn 0040-6090, 7 p.Article
Thermal co-evaporation of Sb2Te3 thin-films optimized for thermoelectric applicationsGONCALVES, L. M; ALPUIM, P; ROLO, A. G et al.Thin solid films. 2011, Vol 519, Num 13, pp 4152-4157, issn 0040-6090, 6 p.Article
Effect of inserting a buffer layer on the characteristics of transparent conducting impurity-doped ZnO thin films prepared by dc magnetron sputteringNOMOTO, Jun-Ichi; ODA, Jun-Ichi; MIYATA, Toshihiro et al.Thin solid films. 2010, Vol 519, Num 5, pp 1587-1593, issn 0040-6090, 7 p.Conference Paper
Improved electrical properties of tin-oxide films by using ultralow-pressure sputtering processMYUNG SOO HUH; BONG SEOP YANG; LEE, Joohei et al.Thin solid films. 2010, Vol 518, Num 4, pp 1170-1173, issn 0040-6090, 4 p.Conference Paper
Carrier mobilities in microcrystalline silicon filmsBRONGER, T; CARIUS, R.Thin solid films. 2007, Vol 515, Num 19, pp 7486-7489, issn 0040-6090, 4 p.Conference Paper
Size effects under a strong magnetic field : transverse magnetoresistance of thin gold films deposited on micaMUNOZ, Raul C; HENRIQUEZ, Ricardo; RAMIREZ, Adan et al.Journal of physics. Condensed matter (Print). 2006, Vol 18, Num 13, pp 3401-3408, issn 0953-8984, 8 p.Article
Annealing in water vapor as a new method for improvement of silicon thin film propertiesHONDA, S; FEJFAR, A; KOCKA, J et al.Journal of non-crystalline solids. 2006, Vol 352, Num 9-20, pp 955-958, issn 0022-3093, 4 p.Conference Paper
Anomalous hall resistivity of cobalt films : Evidence for the intrinsic spin-orbit effectKÖTZLER, Jürgen; GIL, Woosik.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 6, pp 060412.1-060412.4, issn 1098-0121Article
Radiation hardness of ZnO at low temperaturesCOSKUN, C; LOOK, D. C; FARLOW, G. C et al.Semiconductor science and technology. 2004, Vol 19, Num 6, pp 752-754, issn 0268-1242, 3 p.Article