Rare earth doped III-nitrides for optoelectronicsO'DONNELL, K. P; HOURAHINE, B.EPJ. Applied physics (Print). 2006, Vol 36, Num 2, pp 91-103, issn 1286-0042, 13 p.Article

Picosecond dynamics of the photoinduced spin polarization in epitaxial (Ga, Mn)As filmsKIMEL, A. V; ASTAKHOV, G. V; SCHOTT, G. M et al.Physical review letters. 2004, Vol 92, Num 23, pp 237203.1-237203.4, issn 0031-9007Article

p-Type conversion of Si-doped n-type GaN epilayers due to neutron transmutation doping and annealingPARK, S. H; KANG, T. W; KIM, T. W et al.Journal of materials science. 2004, Vol 39, Num 20, pp 6353-6355, issn 0022-2461, 3 p.Article

X-ray, absorption and photocurrent properties of thin-film GaAs on glass formed by pulsed-laser depositionERLACHER, A; AMBRICO, M; CAPOZZI, V et al.Semiconductor science and technology. 2004, Vol 19, Num 11, pp 1322-1324, issn 0268-1242, 3 p.Article

Inn dielectric function from the midinfrared to the ultraviolet rangeKASIC, A; VALCHEVA, E; MONEMAR, B et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 11, pp 115217.1-115217.8, issn 1098-0121Article

Luminescence transients in highly excited GaN grown by hydride vapor-phase epitaxyJURSENAS, S; MIASOJEDOVAS, S; KURILCIK, G et al.Physica status solidi. A. Applied research. 2004, Vol 201, Num 2, pp 199-202, issn 0031-8965, 4 p.Conference Paper

Optical and electrical properties of AlGaN films implanted with Mn, Co, or CrPOLYAKOV, A. Y; SMIRNOV, N. B; GOVORKOV, A. V et al.Journal of electronic materials. 2004, Vol 33, Num 5, pp 384-388, issn 0361-5235, 5 p.Conference Paper

Influence of substrate growth temperature on the Cu-Pt type ordering in lattice-matched GaLnP/GaAs heterostructuresMARTINEZ, O; PELOSI, C; ATTOLINI, G et al.EPJ. Applied physics (Print). 2004, Vol 27, Num 1-3, pp 333-336, issn 1286-0042, 4 p.Conference Paper

A study of surface and interlayer structures of epitaxially grown group-III nitride compound films on Si(111) substrates by second-harmonic generationCHEN, Chau-Shiu; LUE, Juh-Tzeng; WU, Chung-Lin et al.Journal of physics. Condensed matter (Print). 2003, Vol 15, Num 38, pp 6537-6548, issn 0953-8984, 12 p.Article

Optical properties of tellurium-doped In_xGa_1-xAs_ySb_1-y epitaxial layers studied by photoluminescence spectroscopyDIAZ-REYES, J; CARDONA-BEDOYA, J. A; GOMEZ-HERRERA, M. L et al.Journal of physics. Condensed matter (Print). 2003, Vol 15, Num 50, pp 8941-8948, issn 0953-8984, 8 p.Article

Growth of Sb-based materials by MOVPEDIMROTH, F; AGERT, C; BETT, A. W et al.Journal of crystal growth. 2003, Vol 248, pp 265-273, issn 0022-0248, 9 p.Conference Paper

Photoluminescence characterisation of unintentional acceptors in MOVPE-grown GaInSbVANKOVA, V; LEITCH, A. W. R; BOTHA, J. R et al.Journal of crystal growth. 2003, Vol 248, pp 279-283, issn 0022-0248, 5 p.Conference Paper

InAs δ-layer structures in GaAs grown by MOVPE and characterised by luminescence and photocurrent spectroscopyHAZDRA, P; VOVES, J; OSWALD, J et al.Journal of crystal growth. 2003, Vol 248, pp 328-332, issn 0022-0248, 5 p.Conference Paper

Oxygen sensitivity of erbium-doped AlN films probed by site selective spectroscopyOLIVEIRA, J. C; CAVALEIRO, A; VIEIRA, M. T et al.Optical materials (Amsterdam). 2003, Vol 24, Num 1-2, pp 321-325, issn 0925-3467, 5 p.Conference Paper

Angular dependence of the in-plane polarization anisotropy in the absorption coefficient of strained M-plane GaN films on γ-LiAlO₂MISRA, Pranob; SUN, Y. J; BRANDT, O et al.Physica status solidi. B. Basic research. 2003, Vol 240, Num 2, pp 293-296, issn 0370-1972, 4 p.Conference Paper

Strain induced optical anisotropies in zincblende semiconductorsLASTRAS-MARTINEZ, L. F; BALDERAS-NAVARRO, R. E; CHAVIRA-RODRIGUEZ, M et al.Physica status solidi. B. Basic research. 2003, Vol 240, Num 3, pp 500-508, issn 0370-1972, 9 p.Conference Paper

Time-resolved electron transport studies on InGaAs/GaAs-QWIPsSTEINKOGLER, S; SCHNEIDER, H; REHM, R et al.Infrared physics & technology. 2003, Vol 44, Num 5-6, pp 355-361, issn 1350-4495, 7 p.Conference Paper

Observation of the exciton peak related to a two-dimensional electron gas in delta-modulation doped Al_0.27Ga_0.73As/GaAs heterostructuresLEE, H. G; KANG, T. W; CHOO, D. C et al.Journal of materials science letters. 2002, Vol 21, Num 14, pp 1109-1112, issn 0261-8028Article

Exciton-longitudinal-optical phonon coupling in quantum wires and quantum dotsSHEN, W. Z.Physica. B, Condensed matter. 2002, Vol 322, Num 1-2, pp 201-204, issn 0921-4526Article

Hexagonal GaN films deposited by reactive hot wall evaporation techniqueDEB, B; CHAUDHURI, S; PAL, A. K et al.Materials letters (General ed.). 2002, Vol 53, Num 1-2, pp 68-75, issn 0167-577XArticle

Photoluminescence of Ga0.94In0.06As0.13Sb0.87 solid solution lattice matched to InAsMOISEEV, K. D; MIKHAILOVA, M. P; YAKOVLEV, Yu. P et al.Optical materials (Amsterdam). 2002, Vol 19, Num 4, pp 455-459, issn 0925-3467Article

Study of GaN thin films grown on vicinal SiC (0001) substrates by molecular beam epitaxyLIWU LU; HUA YAN; YANG, C. L et al.Semiconductor science and technology. 2002, Vol 17, Num 9, pp 957-960, issn 0268-1242Article

Room temperature photoreflectance of different electron concentration GaN epitaxial layersKUDRAWIEC, R; SEK, G; MISIEWICZ, J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 96, Num 3, pp 284-288, issn 0921-5107, 5 p.Article

Luminescence and stimulated emission from gan on silicon substrates heterostructuresYABLONSKII, G. P; LUTSENKO, E. V; SCHINELLER, B et al.Physica status solidi. A. Applied research. 2002, Vol 192, Num 1, pp 54-59, issn 0031-8965Conference Paper

Optical properties of In_xGa_1-xN with entire alloy composition on InN buffer layer grown by RF-MBEHORN, M; KANO, K; YAMAGUCHI, T et al.Physica status solidi. B. Basic research. 2002, Vol 234, Num 3, pp 750-754, issn 0370-1972, 5 p.Conference Paper