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Amorphous erbium doped borate thin films obtained by the polymeric precursor method and by sol-gel processingMAIA, L. J. Q; MASTELARO, V. R; FICK, J et al.Glass technology. 2006, Vol 47, Num 5, pp 141-144, issn 0017-1050, 4 p.Conference Paper

Electron excitation in glasses followed by time- and space-measuring toolsKREUTZ, E. W; HORN, A; POPRAWE, R et al.Applied surface science. 2005, Vol 248, Num 1-4, pp 66-70, issn 0169-4332, 5 p.Conference Paper

Distribution of electronic states in amorphous Cd-As thin films on the basis of optical measurementsJARZABEK, B; WESZKA, J; CISOWSKI, J et al.Journal of non-crystalline solids. 2004, Vol 333, Num 2, pp 206-211, issn 0022-3093, 6 p.Article

Photoinduced second harmonic generation in the In₂O₃ crystalline films doped by Al and SnHERSCHEL, H; EBOTHE, J; KITVK, I. V et al.Applied surface science. 2004, Vol 222, Num 1-4, pp 198-207, issn 0169-4332, 10 p.Article

Optical and electrical properties of polymerizing plasmas and their correlation with DLC film propertiesRANGEL, Elidiane C; DA CRUZ, Nilson C; KAYAMA, Milton E et al.Plasmas and polymers. 2004, Vol 9, Num 1, pp 1-22, issn 1084-0184, 22 p.Article

Optical study of ion-induced effects in Ge₂₀Se_80-xBi_x thin filmsSHARMA, P; VASHISTHA, M; JAIN, I. P et al.Optical materials (Amsterdam). 2004, Vol 27, Num 3, pp 395-398, issn 0925-3467, 4 p.Article

Análisis de las dependencias composicionales de las propiedades opticas de láminas semiconductoras amorfas del sistema As-S-Se = Analysis of the compositional dependencies of the optical properties of amorphous semiconducting films of the system As-S-SeGONZALEZ-LEAL, J. M; PRIETO-ALCON, R; ANGEL, J. A et al.Boletín de la Sociedad Española de Cerámica y Vidrio. 2004, Vol 43, Num 2, pp 357-362, issn 0366-3175, 6 p.Conference Paper

Determination and analysis of optical constants for Ga₂Se₃ films near absorption edgeAFIFI, M. A; BEKHEET, A. E; EL-SHAIR, H. T et al.Physica. B, Condensed matter. 2003, Vol 325, Num 1-4, pp 308-318, issn 0921-4526, 11 p.Article

Er-doped hydrogenated amorphous silicon: structural and optical propertiesKIM, Mun-Jun; MEBRATU, G. K; SUNG, Joo-Yeon et al.Journal of non-crystalline solids. 2003, Vol 315, Num 3, pp 312-320, issn 0022-3093, 9 p.Article

IR characterization of a-C:H:N films sputtered in Ar/CH₄/N₂ plasmaLAZAR, Gabriel; LAZAR, Iuliana.Journal of non-crystalline solids. 2003, Vol 331, Num 1-3, pp 70-78, issn 0022-3093, 9 p.Article

Infrared reflectance spectra of semi-transparent SiO₂ rich films on silicate glasses: influence of the substrate and film thicknessGEOTTI-BIANCHINI, Franco; PREO, Martina; GUGLIELMI, Massimo et al.Journal of non-crystalline solids. 2003, Vol 321, Num 1-2, pp 110-119, issn 0022-3093, 10 p.Article

Substrate and annealing temperature effects on the optical and electrical properties of Ge₂₀Te₈₀ filmsMOHARRAM, A. H; ABDEL-RAHIM, F. M.Vacuum. 2003, Vol 72, Num 2, pp 113-121, issn 0042-207X, 9 p.Article

Water-related bands in the IR absorption spectra of silicate glassesEFIMOV, Andrei M; POGAREVA, Vera G; SHASHKIN, Alexander V et al.Journal of non-crystalline solids. 2003, Vol 332, Num 1-3, pp 93-114, issn 0022-3093, 22 p.Article

Optical study of Ge_xSb_20-xTe₈₀ chalcogenide filmsPAMUKCHIEVA, V; SZEKERES, A; TODOROVA, K et al.Journal of materials science. Materials in electronics. 2003, Vol 14, Num 10-12, pp 837-838, issn 0957-4522, 2 p.Conference Paper

Revisiting the B-factor variation in a-SiC:H deposited by HWCVDSWAIN, Bibhu P; PATIL, Samadhan B; KUMBHAR, Alka et al.Thin solid films. 2003, Vol 430, Num 1-2, pp 186-188, issn 0040-6090, 3 p.Conference Paper

Gap states in a-SiC from optical measurements and band structure modelsIVASHCHENKO, V. I; SHEVCHENKO, V. I; RUSAKOV, G. V et al.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 8, pp 1799-1812, issn 0953-8984Article

Multiphase structure of hydrogenated amorphous silicon carbide thin filmsWANG, Y. H; LIN, J; HUAN, C. H. A et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 95, Num 1, pp 43-50, issn 0921-5107Article

Photobleaching in amorphous GeS₂ thin filmsQIMING LIU; FUXI GAN.Materials letters (General ed.). 2002, Vol 53, Num 6, pp 411-414, issn 0167-577XArticle

Space-charge-limited current, trap distribution and optical energy gap in amorphous (In₁₃Se₈₇ and In₂₀Se₈₀) thin filmsEL-SAYED, S. M.Vacuum. 2002, Vol 65, Num 2, pp 177-184, issn 0042-207XArticle

On the doping mechanism of boron-doped hydrogenated amorphous silicon deposited by rf-co-sputteringDE LIMA, M. M; MARQUES, F. C.Journal of non-crystalline solids. 2002, Vol 299302, pp 605-609, issn 0022-3093, aConference Paper

Thickness effect of the photodarkening in amorphous chalcogenide filmsHAYASHI, Koji; MITSUISHI, Norihumi.Journal of non-crystalline solids. 2002, Vol 299302, pp 949-952, issn 0022-3093, bConference Paper

Correlation between photoluminescence, optical and structural properties of amorphous nitrogen-rich carbon nitride filmsPLASS, M. F; POPOV, C; IVANOV, B et al.Applied physics. A, Materials science & processing (Print). 2001, Vol 72, Num 1, pp 21-27, issn 0947-8396Article

Effect of thickness and heat treatment on the electrical and optical properties of (Ge₂S₃)₁(Sb₂Se₃)₁ thin filmsEL-WAHABB, E. Abd; EL-SAMANOUDY, M. M; FADEL, M et al.Applied surface science. 2001, Vol 174, Num 2, pp 106-117, issn 0169-4332Article

Electron and photon induced metal diffusion in amorphous As₅₀Se₅₀ thin films coated with two metal layersNORDMAN, Olli; NORDMAN, Nina.Optics communications. 2001, Vol 193, Num 1-6, pp 147-151, issn 0030-4018Article