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Laser field effect on the nonlinear optical properties of a square quantum well under the applied electric fieldKARABULUT, Ibrahim.Applied surface science. 2010, Vol 256, Num 24, pp 7570-7574, issn 0169-4332, 5 p.Article
The optical properties of ZnO/ZnMgO single quantum well grown by P-MBESU, S. C; LU, Y. M; ZHANG, Z. Z et al.Applied surface science. 2008, Vol 254, Num 22, pp 7303-7305, issn 0169-4332, 3 p.Article
Intersubband optical absorption in double quantum well under intense laser fieldOZTURK, E; SARI, H; SOKMEN, I et al.EPJ. Applied physics (Print). 2006, Vol 35, Num 1, pp 1-5, issn 1286-0042, 5 p.Article
Accurate tuning of emission of GaInAsP/InP heterostructures in multiwafer gas-source molecular-beam epitaxyLELARGE, F; GABORIT, F; GENTNER, J. L et al.Journal of crystal growth. 2005, Vol 276, Num 1-2, pp 7-12, issn 0022-0248, 6 p.Article
Luminescence of double quantum wells subject to in-plane magnetic fieldsORLITA, M; GRILL, R; HLFDEK, P et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 16, pp 165314.1-165314.9, issn 1098-0121Article
Electric field and intense laser field effects on the intersubband optical absorption in a graded quantum wellOZTURK, E; SARI, H; SOKMEN, I et al.Journal of physics. D, Applied physics (Print). 2005, Vol 38, Num 6, pp 935-941, issn 0022-3727, 7 p.Article
Growth of highly strained InGaAs quantum wells on GaAs substrates: effect of growth rateTAN, H. H; LEVER, P; JAGADISH, C et al.Journal of crystal growth. 2005, Vol 274, Num 1-2, pp 85-89, issn 0022-0248, 5 p.Article
Carriers' spatial separation nonlinearity in quantum wellsALHARBI, Fahhad H; BARNES, Frank S.Journal of modern optics (Print). 2005, Vol 52, Num 16, pp 2279-2292, issn 0950-0340, 14 p.Conference Paper
Direct measurement of acoustic-phonon scattering of hot quantum-well excitonsHUI ZHAO; KALT, H.Physical review B. Condensed matter and materials physics. 2004, Vol 69, Num 23, pp 233305.1-233305.4, issn 1098-0121Article
High-temperature-grown quaternary AlInGaN epilayers and multiple quantum wells for ultraviolet emissionYANG LIU; EGAWA, Takashi; ISHIKAWA, Hiroyasu et al.Journal of crystal growth. 2004, Vol 264, Num 1-3, pp 159-164, issn 0022-0248, 6 p.Article
Intersubband absorption in n-type GaAs/AlGaAs (001) quantum wells: A tight-binding studySHTINKOV, N; VLAEV, S. J.Physica status solidi. B. Basic research. 2004, Vol 241, Num 3, pp R11-R13, issn 0370-1972Article
Optical bistability in a three-level semiconductor quantum-well systemJOSHI, A; XIAO, M.Applied physics. B, Lasers and optics (Print). 2004, Vol 79, Num 1, pp 65-69, issn 0946-2171, 5 p.Article
Photoluminescence of compressively strained AlGaInP/GaInP quantum well structures grown by MOCVDDONG, Jian-Rong; ZHANG, Xin-Hai; CHUA, Soo-Jin et al.Journal of crystal growth. 2004, Vol 266, Num 4, pp 449-454, issn 0022-0248, 6 p.Article
Strain relaxation behavior of the InGaN/GaN multiple quantum wells observed by transmission electron microscopyCHO, H. K; LEE, J. Y; LEEM, J. Y et al.Applied surface science. 2004, Vol 221, Num 1-4, pp 288-292, issn 0169-4332, 5 p.Article
Effect of interlayer on optical properties of InGaAsN/GaAs quantum well grown by metalorganic chemical vapor depositionCUONG, T. V; KIM, T. S; PARK, J. Y et al.Journal of crystal growth. 2004, Vol 271, Num 3-4, pp 348-352, issn 0022-0248, 5 p.Article
Simultaneous determination of the index and absorption gratings in multiple quantum well photorefractive devices designed for laser ultrasonic sensorSHIMURA, T; GRAPPIN, F; DELAYE, P et al.Optics communications. 2004, Vol 242, Num 1-3, pp 7-12, issn 0030-4018, 6 p.Article
Optical spin injection and tunneling in asymmetric coupled II-VI quantum wellsNAWROCKI, M; KLOPOTOWSKI, L; SUFFCZYNSKI, J et al.Physica status solidi. B. Basic research. 2004, Vol 241, Num 3, pp 680-687, issn 0370-1972, 8 p.Conference Paper
Ultrafast spectroscopy of a two-dimensional electron gasWOERNER, M; SHIH, T; LUO, C. W et al.Lasers and Electro-optics Society. 2004, isbn 0-7803-8557-8, 2Vol, Vol1, 451-452Conference Paper
Characterization of aluminium concentration in shallow quantum wells AlxGa1-xAs/GaAs typesCHAOUACHE, M; CHTOUROU, R; CHARFI, F. F et al.Solid state communications. 2003, Vol 125, Num 1, pp 51-54, issn 0038-1098, 4 p.Article
In situ optical reflectometry applied to growth of indium gallium nitride epilayers and multi-quantum well structuresDEATCHER, C. J; LIU, C; PEREIRA, S et al.Semiconductor science and technology. 2003, Vol 18, Num 4, pp 212-218, issn 0268-1242, 7 p.Article
Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wellsBIAN, L. F; JIANG, D. S; LU, S. L et al.Journal of crystal growth. 2003, Vol 253, Num 1-4, pp 155-160, issn 0022-0248, 6 p.Article
Optical properties of GaN/AlGaN quantum wells with inversion domainsSHUBINA, T. V; JMERIK, V. N; MONEMAR, B et al.Physica status solidi. A. Applied research. 2003, Vol 195, Num 3, pp 537-542, issn 0031-8965, 6 p.Article
Optical properties of InAs1-xNx/In0.5Ga0.47As single quantum wells grown by gas source molecular beam epitaxyCHEN, Guan-Ru; LIN, Hao-Hsiung; WANG, Jyh-Shyang et al.Journal of electronic materials. 2003, Vol 32, Num 4, pp 244-248, issn 0361-5235, 5 p.Article
Quantum well intermixing in InGaAsP laser structures using a low temperature grown InP cap layerGORDON, B. E; LEE, A. S. W; THOMPSON, D. A et al.Semiconductor science and technology. 2003, Vol 18, Num 8, pp 782-787, issn 0268-1242, 6 p.Article
Spontaneous and piezoelectric polarization effects on linewidth enhancement factor of wurtzite InGaN/GaN quantum-well lasersPARK, Seoung-Hwan.Physica status solidi. A. Applied research. 2003, Vol 198, Num 2, pp 336-342, issn 0031-8965, 7 p.Article
