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Results 1 to 25 of 535

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Organic molecules passivated Mn doped Zinc Selenide quantum dots and its propertiesARCHANA, J; NAVANEETHAN, M; PONNUSAMY, S et al.Applied surface science. 2011, Vol 257, Num 17, pp 7699-7703, issn 0169-4332, 5 p.Article

Optical studies of ZnO/Ag nanojunctionsPATOLE, Shashikant; ISLAM, M; AIYER, R. C et al.Journal of materials science. 2006, Vol 41, Num 17, pp 5602-5607, issn 0022-2461, 6 p.Article

Structural and optical properties of InAs/GaAs quantum dots emitting at 1.5μmGONG, Z; FANG, Z. D; MIAO, Z. H et al.Journal of crystal growth. 2005, Vol 274, Num 1-2, pp 78-84, issn 0022-0248, 7 p.Article

Optical response in a quantum dot superlattice nanoring under a lateral electric fieldZHANG, T. Y; ZHAO, W; CAO, J. C et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 16, pp 165310.1-165310.6, issn 1098-0121Article

Exciton dephasing in self-assembled CdSe quantum dotsPALINGINIS, Phedon; HAILIN WANG; GOUPALOV, Serguei V et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 7, pp 073302.1-073302.4, issn 1098-0121Article

Anti-Stokes photoluminescence in TiO2 nano-particle films at room temperatureCHUNXIA WANG; QI LI; GUIGUANG XIONG et al.Journal of materials science. 2004, Vol 39, Num 16-17, pp 5581-5582, issn 0022-2461, 2 p.Article

Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dotsSAINT-GIRONS, G; LEMAITRE, A; NAVARRO-PAREDES, V et al.Journal of crystal growth. 2004, Vol 264, Num 1-3, pp 334-338, issn 0022-0248, 5 p.Article

Optical and structural characterization of self-organized stacked GaN/AIN quantum dotsSALVIATI, G; ROSSI, F; ARMANI, N et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 2, pp S115-S126, issn 0953-8984Conference Paper

Temporal dependence of gallium nitride quantum dot cathodoluminescence under weak electron beam excitationVERBERT, J; BARJON, J; MONROY, E et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 2, pp S243-S249, issn 0953-8984Conference Paper

Coherent spin transfer between molecularly bridged quantum dotsMIN OUYANG; AWSCHALOM, David D.Science (Washington, D.C.). 2003, Vol 301, Num 5636, pp 1074-1078, issn 0036-8075, 5 p.Article

Effect of thin GaAs interface layer on InAs quantum dots grown on InGaAs/InP using metalorganic vapor phase epitaxyYUEMING QIU; UHL, David.Journal of crystal growth. 2003, Vol 257, Num 3-4, pp 225-230, issn 0022-0248, 6 p.Article

Effects of thermal annealing on the interband transitions of single and vertically stacked InAs/GaAs self-assembled quantum dotsCHANG YUN LEE; JIN DONG SONG; YONG TAK LEE et al.Solid state communications. 2003, Vol 126, Num 7, pp 421-424, issn 0038-1098, 4 p.Article

Influence of InGaAs overgrowth layer on structural and optical properties of InAs quantum dotsJIN SOO KIM; JIN HONG LEE; SUNG UI HONG et al.Journal of crystal growth. 2003, Vol 255, Num 1-2, pp 57-62, issn 0022-0248, 6 p.Article

Luminescence and growth of CdTe quantum dots and clustersWUISTER, Sander F; VAN DRIEL, Floris; MEIJERINK, Andries et al.PCCP. Physical chemistry chemical physics (Print). 2003, Vol 5, Num 6, pp 1253-1258, issn 1463-9076, 6 p.Article

Optical property of self-assembled GaInNAs quantum dots grown by solid source molecular beam epitaxyYEW, K. C; YOON, S. F; SUN, Z. Z et al.Journal of crystal growth. 2003, Vol 247, Num 3-4, pp 279-283, issn 0022-0248, 5 p.Article

Radiative recombination lifetime of excitons in self-organized InAs/GaAs quantum dotsMELLITI, A; MAAREF, M. A; HASSEN, F et al.Solid state communications. 2003, Vol 128, Num 6-7, pp 213-217, issn 0038-1098, 5 p.Article

Oligomeric ligands for luminescent and stable nanocrystal quantum dotsKIM, Sungjee; BAWENDI, Moungi G.Journal of the American Chemical Society. 2003, Vol 125, Num 48, pp 14652-14653, issn 0002-7863, 2 p.Article

Spacer layer thickness effects on the photoluminescence properties of InAs/GaAs quantum dot superlatticesILAHI, B; SFAXI, L; HASSEN, F et al.Physica status solidi. A. Applied research. 2003, Vol 199, Num 3, pp 457-463, issn 0031-8965, 7 p.Article

Temperature dependent photoluminescence in self assembled InAs quantum dot arraysLAMBA, Subhalakshmi; JOSHI, S. K.Physica status solidi. B. Basic research. 2003, Vol 239, Num 2, pp 353-360, issn 0370-1972, 8 p.Article

Optical response at 1.3 μm and 1.5 μm with InAs quantum dots embedded in a pure GaAs matrixDA SILVA, M. J; QUIVY, A. A; MARTINI, S et al.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 181-185, issn 0022-0248, 5 p.Conference Paper

Effective tuning of the charge-state of single In(Ga)As/GaAs quantum dots by below barrier band gap excitationKARLSSON, K. F; MOSKALENKO, E. S; HOLTZ, P. O et al.Surface science. 2003, Vol 532-35, pp 843-847, issn 0039-6028, 5 p.Conference Paper

Open issues for lasing at 1.3 μm in MOCVD-grown quantum dotsDE GIORGI, M; PASSASEO, A; MARUCCIO, G et al.Physica status solidi. B. Basic research. 2003, Vol 238, Num 2, pp 349-352, issn 0370-1972, 4 p.Conference Paper

Nanoindentation effect on the optical properties of self-assembled quantum dotsJOHNSON, H. T; BOSE, R.Journal of the mechanics and physics of solids. 2003, Vol 51, Num 11-12, pp 2085-2104, issn 0022-5096, 20 p.Conference Paper

Self-assembled quantum dots as a source of single photons and photon pairsSHIELDS, A. J; STEVENSON, R. M; RITCHIE, D. A et al.Physica status solidi. B. Basic research. 2003, Vol 238, Num 2, pp 353-359, issn 0370-1972, 7 p.Conference Paper

Thermal ionisation of ground and multiply excited states in InAs quantum dots embedded into InGaAs/GaAs MQWTORCHYNSKA, T. V; CASAS ESPINOLA, J. L; VELASQUEZ LOSADA, E et al.Surface science. 2003, Vol 532-35, pp 848-851, issn 0039-6028, 4 p.Conference Paper

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