A novel design for a variable energy positron lifetime spectrometerCHEN, D; ZHANG, J. D; CHENG, C. C et al.Applied surface science. 2008, Vol 255, Num 1, pp 122-124, issn 0169-4332, 3 p.Article

Behavior of cold-worked AISI-304 steel in stress-corrosion cracking process: Microstructural aspectsZEMAN, A; NOVOTNY, R; UCA, O et al.Applied surface science. 2008, Vol 255, Num 1, pp 160-163, issn 0169-4332, 4 p.Article

Defect engineering of ZnOWEBER, M. H; SELIM, F. A; SOLODOVNIKOV, D et al.Applied surface science. 2008, Vol 255, Num 1, pp 68-70, issn 0169-4332, 3 p.Article

High-momentum analysis in Doppler spectroscopyHAAKS, Matz; STAAB, Torsten E. M.Applied surface science. 2008, Vol 255, Num 1, pp 84-88, issn 0169-4332, 5 p.Article

Hydrogen-induced buckling of Pd films studied by positron annihilationCIZEK, J; PROCHAZKA, I; NIKITIN, E et al.Applied surface science. 2008, Vol 255, Num 1, pp 241-244, issn 0169-4332, 4 p.Article

Positron beam studies on polyaniline and Ag-coated polyanilineKRISHNA, J. B. M; ABHAYA, S; AMARENDRA, G et al.Applied surface science. 2008, Vol 255, Num 1, pp 248-250, issn 0169-4332, 3 p.Article

Quantum beats in the 3γ annihilation decay of Positronium observed by perturbed angular distributionIVANOV, Eugeniu; VATA, Ion; DUDU, Dorin et al.Applied surface science. 2008, Vol 255, Num 1, pp 179-182, issn 0169-4332, 4 p.Article

Simulation of positron annihilation response to mechanical deformation of nanostructured Ni3AlMELIKHOVA, O; KURIPLACH, J; PROCHAZKA, I et al.Applied surface science. 2008, Vol 255, Num 1, pp 157-159, issn 0169-4332, 3 p.Article

Disordered state of adsorbed hydrogens on Ni(111) surface studied by slow-positron beamKOMAGATA, S; HIROTA, K; ARII, S et al.Surface and interface analysis. 2008, Vol 40, Num 13, pp 1713-1715, issn 0142-2421, 3 p.Conference Paper

Design of a new type positron beam systemWU, Y. C; WANG, B; WANG, S. J et al.Applied surface science. 2006, Vol 252, Num 9, pp 3121-3125, issn 0169-4332, 5 p.Conference Paper

Stress and interfacial defects induced by amorphous carbon film growth on siliconMACCHI, C; MARIAZZI, S; ZECCA, A et al.Diamond and related materials. 2005, Vol 14, Num 3-7, pp 1036-1040, issn 0925-9635, 5 p.Conference Paper

Defect production in ion-implanted yttria-stabilized zirconia investigated by positron depth profilingSAUDE, S; GRYNSZPAN, R. I; ANWAND, W et al.Journal of alloys and compounds. 2004, Vol 382, pp 252-256, issn 0925-8388, 5 p.Conference Paper

Positron lifetime measurements in sintered aluminaMAYA, G; KANSY, J; AHMED, A. Si et al.Physica status solidi. A. Applied research. 2003, Vol 198, Num 1, pp 215-223, issn 0031-8965, 9 p.Article

Evidence for excess vacancy defects in the Pd-Si system: positron annihilation, x-ray diffraction and Auger electron spectroscopy studyABHAYA, S; AMARENDRA, G; REDDY, G. L. N et al.Journal of physics. Condensed matter (Print). 2003, Vol 15, Num 46, pp L713-L719, issn 0953-8984Article

A nanoscale characterisation of extended defects in glassy-like As₂Se₃ semiconductors with PAL techniqueSHPOTYUK, O; KOVALSKIY, A; FILIPECKI, J et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 960-964, issn 0921-4526, 5 p.Conference Paper

At-temperature annealing of near-surface vacancy-type defects observed by positronium formation spectroscopyCOLEMAN, P. G; MALIK, F; KNIGHTS, A. P et al.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 4, pp 681-688, issn 0953-8984Article

Density gradient in SiO₂ films on silicon as revealed by positron annihilation spectroscopyREVESZ, A. G; ANWAND, W; BRAUER, G et al.Applied surface science. 2002, Vol 194, Num 1-4, pp 101-105, issn 0169-4332, 5 p.Conference Paper

Electronic stability and noise reduction in Doppler broadening spectroscopy systemsCHING, H. M; ZHANG, J. D; BELING, C. D et al.Applied surface science. 2002, Vol 194, Num 1-4, pp 250-254, issn 0169-4332, 5 p.Conference Paper

Optimization of measurement parameters in Doppler broadening spectroscopyPI, X. D; BURROWS, C. P; COLEMAN, P. G et al.Applied surface science. 2002, Vol 194, Num 1-4, pp 255-259, issn 0169-4332, 5 p.Conference Paper

Vacancy clusters close to a fatigue crack observed with the München scanning positron microscopeEGGER, W; KÖGEL, G; SPERR, P et al.Applied surface science. 2002, Vol 194, Num 1-4, pp 214-217, issn 0169-4332, 4 p.Conference Paper

Vacancy-type defects in 6H-SiC caused by N⁺ and Al⁺ high fluence co-implantationANWAND, W; BRAUER, G; SKORUPA, W et al.Applied surface science. 2002, Vol 194, Num 1-4, pp 131-135, issn 0169-4332, 5 p.Conference Paper

Positron re-emission from electro-deposited NiWGRYNSZPAN, R. I; COLEMAN, P. G.Measurement science & technology (Print). 2001, Vol 12, Num 2, pp 163-166, issn 0957-0233Article

Positrons in doped pyreneGOWOREK, Tomasz; RYBKA, Czeslaw; WAWRYSZCZUK, Jan et al.PCCP. Physical chemistry chemical physics (Print). 2001, Vol 3, Num 9, pp 1769-1772, issn 1463-9076Article

Investigation of the defect structure in Cd_1-xZn_xTe by positron lifetime spectroscopyMARTYNIUK, M; MASCHER, P.Physica. B, Condensed matter. 2001, Vol 308-10, pp 924-927, issn 0921-4526Conference Paper

Study of vacancy-type defects after Cu diffusion in GaAsBONDARENKO, V; PETTERS, K; KRAUSE-REHBERG, R et al.Physica. B, Condensed matter. 2001, Vol 308-10, pp 792-795, issn 0921-4526Conference Paper