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Complex studies of properties of nanostructured siliconLUCHENKO, A. I; MELNICHENKO, M. M; SVEZHENTSOVA, K. V et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 632716.1-632716.11, issn 0277-786X, isbn 0-8194-6406-6, 1VolConference Paper
The GaAs scene in 1962: the battle with SiHILSUM, Cyril.Semiconductor science and technology. 2013, Vol 28, Num 1, issn 0268-1242, 015028.1-015028.4Article
Characteristic Impedance of Periodically Grounded Lossless Multiconductor Transmission Lines and Time-Domain Equivalent RepresentationANDREOTTI, Amedeo; ASSANTE, Dario; VEROLINO, Luigi et al.IEEE transactions on electromagnetic compatibility. 2014, Vol 56, Num 1, pp 221-230, issn 0018-9375, 10 p.Article
Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor depositionHE, X. G; ZHAO, D. G; WANG, H et al.Thin solid films. 2014, Vol 564, pp 135-139, issn 0040-6090, 5 p.Article
Deposition and current conduction of mixed hexagonal and cubic phases of AIN/p-Si films prepared by vacuum arc discharge: Effect of deposition temperatureABDALLAH, B; AL-KHAWAJA, S; ALKHAWWAM, A et al.Thin solid films. 2014, Vol 562, pp 152-158, issn 0040-6090, 7 p.Article
Effect of film growth rate and thickness on properties of Ge/GaAs(100) thin filmsMITIN, V. F; LAZAROV, V. K; LARI, L et al.Thin solid films. 2014, Vol 550, pp 715-722, issn 0040-6090, 8 p.Article
Electrical properties of Au/polyvinylidene fluoride/n-InP Schottky diode with polymer interlayerRAJAGOPAL REDDY, V.Thin solid films. 2014, Vol 556, pp 300-306, issn 0040-6090, 7 p.Article
First-principles molecular dynamics investigation of thermal and mechanical stability of the TiN(001)/AlN and ZrN(001)/ AlN heterostructuresIVASHCHENKO, V. I; VEPREK, S; TURCHI, P. E. A et al.Thin solid films. 2014, Vol 564, pp 284-293, issn 0040-6090, 10 p.Article
Phonon-limited electron mobility in III-nitride heterojunctionsRIZWANA BEGUM, K; SANKESHWAR, N. S.Diamond and related materials. 2014, Vol 49, pp 87-95, issn 0925-9635, 9 p.Article
A study on multiple defect states in low-carbon doped GaN layers and its correlation with AlGaN/GaN high electron mobility transistor operationTANAKA, Takeshi; SHIOJIMA, Kenji; OTOKI, Yohei et al.Thin solid films. 2014, Vol 557, pp 207-211, issn 0040-6090, 5 p.Conference Paper
Capping InAs quantum dots with an InGaAsSb strain-reducing layer to improve optical properties and dot-size uniformityLIU, Wei-Sheng; CHANG, Ching-Min.Thin solid films. 2014, Vol 570, pp 490-495, issn 0040-6090, 6 p., bConference Paper
Effects of TiO2-doped silicone encapsulation material on the light extraction efficiency of GaN-based blue light-emitting diodesWANG, Pin-Chao; LIN, Chun-Liang; SU, Yan-Kuin et al.Thin solid films. 2014, Vol 570, pp 273-276, issn 0040-6090, 4 p., bConference Paper
High-temperature isothermal capacitance transient spectroscopy study on SiN deposition damages for low-Mg-doped p-GaN Schottky diodesSHIOJIMA, Kenji; WAKAYAMA, Hisashi; AOKI, Toshichika et al.Thin solid films. 2014, Vol 557, pp 268-271, issn 0040-6090, 4 p.Conference Paper
Molecular beam epitaxy of SrTiO3 on GaAs(001): GaAs surface treatment and structural characterization of the oxide layerLOUAHADJ, L; BACHELET, R; REGRENY, P et al.Thin solid films. 2014, Vol 563, pp 2-5, issn 0040-6090, 4 p.Conference Paper
Simulation and fabrication of SiO2/graded-index TiO2 antireflection coating for triple-junction GaAs solar cells by using the hybrid deposition processLIU, Jheng-Jie; HO, Wen-Jeng; LEE, Yi-Yu et al.Thin solid films. 2014, Vol 570, pp 585-590, issn 0040-6090, 6 p., bConference Paper
Current―voltage―temperature characteristics of Au/p-InP Schottky barrier diodeKORUCU, Demet; DUMAN, Songül.Thin solid films. 2013, Vol 531, pp 436-441, issn 0040-6090, 6 p.Article
Dynamical X-ray Diffraction from InxGa1―xAs Heterostructures with DislocationsRAGO, P. B; AYERS, J. E.Journal of electronic materials. 2013, Vol 42, Num 8, pp 2450-2458, issn 0361-5235, 9 p.Article
Effects of Ti alloying of AlCrN coatings on thermal stability and oxidation resistanceFORSEN, R; JOHANSSON, M. P; ODEN, M et al.Thin solid films. 2013, Vol 534, pp 394-402, issn 0040-6090, 9 p.Article
Enhanced photocurrent and persistent photoconductivity in nanoporous GaN formed by electrochemical etchingLEE, Yoon-Han; KANG, Jin-Ho; RYU, Sang-Wan et al.Thin solid films. 2013, Vol 540, pp 150-154, issn 0040-6090, 5 p.Article
Optimization of nitrogen plasma source parameters by measurements of emitted light intensity for growth of GaN by molecular beam epitaxyKLOSEK, K; SOBANSKA, M; TCHUTCHULASHVILI, G et al.Thin solid films. 2013, Vol 534, pp 107-110, issn 0040-6090, 4 p.Article
Self-organized periodic soft-hard nanolamellae in polycrystalline TiAlN thin filmsKECKES, J; DANIEL, R; MITTERER, C et al.Thin solid films. 2013, Vol 545, pp 29-32, issn 0040-6090, 4 p.Article
Structural and Carrier Dynamics of GaN and AlGaN-Based Double Heterostructures in the UV RegionARIVAZHAGAN, Ponnusamy; RAMESH, Raju; JAYASAKTHI, Mathaiyan et al.Journal of electronic materials. 2013, Vol 42, Num 8, pp 2486-2491, issn 0361-5235, 6 p.Article
Study of the optical effects of nanostructure embedded GaN light emitting diodes formed by nanorod template overgrowthWANG, Chi-Yu; LEE, Yun-Chih; LEE, Po-Shen et al.Thin solid films. 2013, Vol 539, pp 245-250, issn 0040-6090, 6 p.Article
Water-Mediated Self-Assembly of 16-Mercaptohexadecanoic Acid on GaAs (001)XIAOHUAN HUANG; NENG LIU; MOUMANIS, Khalid et al.Journal of physical chemistry. C. 2013, Vol 117, Num 29, pp 15090-15097, issn 1932-7447, 8 p.Article
Analysis of crystal defects on GaN-based semiconductors with advanced scanning probe microscope techniquesHOFER, Alexander; BENSTETTER, Günther; BIBERGER, Roland et al.Thin solid films. 2013, Vol 544, pp 139-143, issn 0040-6090, 5 p.Conference Paper