Pascal and Francis Bibliographic Databases

Help

Search results

Your search

cc.\*:("8110B")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 1053

  • Page / 43
Export

Selection :

  • and

MECHANISM AND KINETICS OF THE FORMATION OF ZINC PACK COATINGSVOURLIAS, G; PISTOFIDIS, N; CHRISSAFIS, K et al.Journal of thermal analysis and calorimetry. 2008, Vol 91, Num 2, pp 497-501, issn 1388-6150, 5 p.Article

Numerical analyses of a microwave plasma chemical vapor deposition reactor for thick diamond synthesesYAMADA, H; CHAYAHARA, A; MOKUNO, Y et al.Diamond and related materials. 2006, Vol 15, Num 9, pp 1389-1394, issn 0925-9635, 6 p.Article

Saturation drift velocity measurement for CVD diamond by combination of a charge distribution measurement and a TOF method using a UV pulsed laserOSHIKI, Y; KANEKO, J. H; IMAI, T et al.Diamond and related materials. 2006, Vol 15, Num 10, pp 1508-1512, issn 0925-9635, 5 p.Article

Synthesis, optical properties and growth mechanism of leaf-like GaN crystalHAILIN QIU; CHUANBAO CAO; JIE LI et al.Journal of crystal growth. 2006, Vol 291, Num 2, pp 491-496, issn 0022-0248, 6 p.Article

Various one-dimensional GaN nanostructures formed by non-catalytic routesCHOI, Heon-Jin; KIM, Dae-Hee; KIM, Tae-Geun et al.Journal of electroceramics. 2006, Vol 17, Num 2-4, pp 221-225, issn 1385-3449, 5 p.Conference Paper

Effect of thermal radiation and absorption in GaN-MOVPE growth modeling on temperature distribution and chemical stateHIRAKO, Akira; OHKAWA, Kazuhiro.Journal of crystal growth. 2005, Vol 276, Num 1-2, pp 57-63, issn 0022-0248, 7 p.Article

Failure of the vapor-liquid-solid mechanism in au-assisted MOVPE growth of InAs nanowiresDICK, Kimberly A; DEPPERT, Knut; MARTENSSON, Thomas et al.Nano letters (Print). 2005, Vol 5, Num 4, pp 761-764, issn 1530-6984, 4 p.Article

Growth of ZnSe single crystals from Zn-Se-Zn(NH4)3Cl5 systemHUANYONG LI; WANQI JIE; KEWEI XU et al.Journal of crystal growth. 2005, Vol 279, Num 1-2, pp 5-12, issn 0022-0248, 8 p.Article

Tensile and fatigue strength of free-standing CVD diamondDAVIES, A. R; FIELD, J. E; TAKAHASHI, K et al.Diamond and related materials. 2005, Vol 14, Num 1, pp 6-10, issn 0925-9635, 5 p.Article

Supersaturation-controlled synthesis of two types of single-sided ZnO comb-like nanostructures by thermal evaporation at low temperatureZHANG, Y. H; LIU, J; LIU, T et al.Journal of crystal growth. 2005, Vol 285, Num 4, pp 541-548, issn 0022-0248, 8 p.Article

CVD diamond detectors for nuclear and dosimetric applicationsMANFREDOTTI, C.Diamond and related materials. 2005, Vol 14, Num 3-7, pp 531-540, issn 0925-9635, 10 p.Conference Paper

Development of a charge-carrier drift velocity measurement system in diamonds by using a UV pulse laserFUJITA, F; HOMMA, A; FURUSAKA, M et al.Diamond and related materials. 2005, Vol 14, Num 11-12, pp 1992-1994, issn 0925-9635, 3 p.Conference Paper

Synthesizing single-crystal diamond by repetition of high rate homoepitaxial growth by microwave plasma CVDMOKUNO, Y; CHAYAHARA, A; SODA, Y et al.Diamond and related materials. 2005, Vol 14, Num 11-12, pp 1743-1746, issn 0925-9635, 4 p.Conference Paper

Ammonolysis of Ga2O3 and its application to the sublimation source for the growth of GaN filmPARK, Y. J; OH, C. S; YEOM, T. H et al.Journal of crystal growth. 2004, Vol 264, Num 1-3, pp 1-6, issn 0022-0248, 6 p.Article

Co-doping carbon tetrabromide (CBr4) and antimony (Sb) on GaAs [100] in solid source molecular beam epitaxyCHEAH, W. K; FAN, W. J; YOON, S. F et al.Journal of crystal growth. 2004, Vol 267, Num 1-2, pp 364-371, issn 0022-0248, 8 p.Article

Effect of substrate temperature on CoSi2 formation by a metal vapor vacuum arc ion sourceHE, Y; FENG, J. Y; LI, W. Z et al.Journal of crystal growth. 2004, Vol 264, Num 1-3, pp 266-270, issn 0022-0248, 5 p.Article

Effective increase of single-crystalline yield during PVT growth of SiC by tailoring of temperature gradientHERRO, Z. G; EPELBAUM, B. M; BICKERMANN, M et al.Journal of crystal growth. 2004, Vol 262, Num 1-4, pp 105-112, issn 0022-0248, 8 p.Article

Electrical properties and ultrafast photo-response of InGaAs/InP grown by low-temperature molecular beam epitaxy with a GaAs decomposition sourceKIM, J. M; LEE, Y. T; SONG, J. D et al.Journal of crystal growth. 2004, Vol 265, Num 1-2, pp 8-13, issn 0022-0248, 6 p.Article

Growth mechanism of oriented long single walled carbon nanotubes using fast-heating chemical vapor deposition processSHAOMING HUANG; WOODSON, Mike; SMALLEY, Richard et al.Nano letters (Print). 2004, Vol 4, Num 6, pp 1025-1028, issn 1530-6984, 4 p.Article

Growth of heavily Zn-doped InGaAs at low temperature by LP-MOCVDLIN, T; JIANG, L; WEI, X et al.Journal of crystal growth. 2004, Vol 261, Num 4, pp 490-495, issn 0022-0248, 6 p.Article

Growth of high-quality AlN with low pit density on SiC substratesNAKAJIMA, A; FURUKAWA, Y; KOGA, S et al.Journal of crystal growth. 2004, Vol 265, Num 3-4, pp 351-356, issn 0022-0248, 6 p.Article

Growth of the single crystals of CdxNiyCrzSe4 and their magnetic propertiesJENDRZEJEWSKA, Izabela; ZELECHOWER, Michał; SZAMOCKA, Karina et al.Journal of crystal growth. 2004, Vol 270, Num 1-2, pp 30-37, issn 0022-0248, 8 p.Article

In situ study of GaAs growth mechanisms using tri-methyl gallium and tri-ethyl gallium precursors in metal-organic vapour phase epitaxyPRISTOVSEK, M; ZORN, M; WEYERS, M et al.Journal of crystal growth. 2004, Vol 262, Num 1-4, pp 78-83, issn 0022-0248, 6 p.Article

MOVPE growth of grade-strained bulk InGaAs/InP for broad-band optoelectronic device applicationsSHURONG WANG; WEI WANG; HONGLIANG ZHU et al.Journal of crystal growth. 2004, Vol 260, Num 3-4, pp 464-468, issn 0022-0248, 5 p.Article

Natural growth habit of bulk AlN crystalsEPELBAUM, B. M; SEITZ, C; MAGERL, A et al.Journal of crystal growth. 2004, Vol 265, Num 3-4, pp 577-581, issn 0022-0248, 5 p.Article

  • Page / 43