The effect of hydrogen irradiation and annealing on the low-temperature growth of homoepitaxial ZnO layers grown on (0 0 0 1) ZnO substrates by plasma-assisted molecular beam epitaxyPARK, S. H; SUZUKI, H; YAO, T et al.Applied surface science. 2008, Vol 254, Num 10, pp 3120-3124, issn 0169-4332, 5 p.Article

RHEED intensity oscillation of C₆₀ growth on GaAs substratesNISHINAGA, J; KAWAHARAZUKA, A; HORIKOSHI, Y et al.Applied surface science. 2008, Vol 255, Num 3, pp 682-684, issn 0169-4332, 3 p.Conference Paper

Selective-area-growth of InAs-QDs with different absorption wavelengths via developed metal-mask/MBE method for integrated optical devicesOZAKI, N; TAKATA, Y; OHKOUCHI, S et al.Applied surface science. 2008, Vol 254, Num 23, pp 7968-7971, issn 0169-4332, 4 p.Conference Paper

The high quality ZnO growth on c-Al₂O₃ substrate with Cr₂O₃ buffer layer using plasma-assisted molecular beam epitaxyPARK, J. S; HONG, S. K; MINEGISHI, T et al.Applied surface science. 2008, Vol 254, Num 23, pp 7786-7789, issn 0169-4332, 4 p.Conference Paper

AlAs-in-AlSb digital alloy superlattice morphology versus growth temperatureBOISHIN, G. I; CANEDY, C. L; VURGAFTMAN, I et al.Journal of crystal growth. 2006, Vol 286, Num 1, pp 32-36, issn 0022-0248, 5 p.Article

Epitaxial growth of Au(1 1 1) on α-Al₂O₃(0 0 0 1) by using a Co seed layerKAMIKO, Masao; YAMAMOTO, Ryoichi.Journal of crystal growth. 2006, Vol 293, Num 1, pp 216-222, issn 0022-0248, 7 p.Article

Growth of ZnO thin films on c-plane Al₂O₃ by molecular beam epitaxy using ozone as an oxygen sourceHEO, Y. W; IP, K; PEANON, S. J et al.Applied surface science. 2006, Vol 252, Num 20, pp 7442-7448, issn 0169-4332, 7 p.Article

Heteroepitaxy of CdTe on tilting Si(211) substrates by molecular beam epitaxyWANG, Yuan-Zhang; LU CHEN; YAN WU et al.Journal of crystal growth. 2006, Vol 290, Num 2, pp 436-440, issn 0022-0248, 5 p.Article

Reflection high-energy electron diffraction study of molecular beam epitaxy growth of Pr₂O₃ on Si(001)XIANGXIN GUO; BRAUN, Wolfgang; JENICHEN, Bernd et al.Journal of crystal growth. 2006, Vol 290, Num 1, pp 73-79, issn 0022-0248, 7 p.Article

The impact of non-uniform channel layer growth on device characteristics in state of the Art Si/SiGe/Si p-metal oxide semiconductor field effect transistorsCHANG, A. C. K; ROSS, I. M; NORRIS, D. J et al.Thin solid films. 2006, Vol 496, Num 2, pp 306-310, issn 0040-6090, 5 p.Article

The influence of the edge effect of the mask on the strain and the morphology of SiGe film grown at the patterned Si substrate by molecular beam epitaxyHONGBIN YANG; ZHANG, Xiang-Jiu; ZUIMING JIANG et al.Thin solid films. 2006, Vol 514, Num 1-2, pp 344-349, issn 0040-6090, 6 p.Article

Analysis on reflection spectra in strained ZnO thin filmsMAKINO, T; SEGAWA, Y; KAWASAKI, M et al.Journal of crystal growth. 2006, Vol 287, Num 1, pp 124-127, issn 0022-0248, 4 p.Conference Paper

Fabrication of thin epitaxial and amorphous self-supported layers for device applicationsGU, E. D; ZHOU, J.Thin solid films. 2006, Vol 495, Num 1-2, pp 361-364, issn 0040-6090, 4 p.Conference Paper

InN : A material with photovoltaic promise and challengesTRYBUS, Elaissa; NAMKOONG, Gon; HENDERSON, Walter et al.Journal of crystal growth. 2006, Vol 288, Num 2, pp 218-224, issn 0022-0248, 7 p.Conference Paper

Influence of substrate orientation on the growth of HgCdTe by molecular beam epitaxyALMEIDA, L. A; GROENERT, M; MARKUNAS, J et al.Journal of electronic materials. 2006, Vol 35, Num 6, pp 1214-1218, issn 0361-5235, 5 p.Conference Paper

Material quality characterization of CdZnTe substrates for HgCdTe epitaxyCARINI, G. A; ARNONE, C; ZHAO, J et al.Journal of electronic materials. 2006, Vol 35, Num 6, pp 1495-1502, issn 0361-5235, 8 p.Conference Paper

Photoluminescence study in step-graded composition In_xAl_1-xAs/GaAsYAHYAOUI, N; ALOULOU, S; CHTOUROU, R et al.Applied surface science. 2006, Vol 253, Num 1, pp 292-295, issn 0169-4332, 4 p.Conference Paper

Structure and magnetism of Co_a(1-x)Mn_axGe_b epitaxial filmsTSUI, F; HE, L; LORANG, D et al.Applied surface science. 2006, Vol 252, Num 7, pp 2512-2517, issn 0169-4332, 6 p.Conference Paper

Concomitant incorporation of antimony and nitrogen in GaAsSbN lattice-matched to GaAsWICAKSONO, S; YOON, S. F; TAN, K. H et al.Journal of crystal growth. 2005, Vol 274, Num 3-4, pp 355-361, issn 0022-0248, 7 p.Article

Effects of oxygen flow rate on the properties of HfO₂ layers grown by metalorganic molecular beam epitaxyMOON, Tae-Hyoung; MYOUNG, Jae-Min.Applied surface science. 2005, Vol 240, Num 1-4, pp 197-203, issn 0169-4332, 7 p.Article

Growth of InN on Ge substrate by molecular beam epitaxyTRYBUS, Elaissa; NAMKOONG, Gon; CARTWRIGHT, Alexander et al.Journal of crystal growth. 2005, Vol 279, Num 3-4, pp 311-315, issn 0022-0248, 5 p.Article

Growth of SrTiO₃ films on Si(0 0 1)-Sr(2 × 1) surfacesNURUL KABIR BHUIYAN, Md; KIMURA, Hiroaki; TAMBO, Toyokazu et al.Applied surface science. 2005, Vol 249, Num 1-4, pp 419-424, issn 0169-4332, 6 p.Article

MBE XIII, 2004: 13th International Conference on Molecular Beam Epitaxy, Edinburgh, UK, 22-27 August 2004JONES, Tim S.Journal of crystal growth. 2005, Vol 278, Num 1-4, issn 0022-0248, 812 p.Conference Proceedings

Growth of ZnO and device applicationsIWATA, K; TAMPO, H; YAMADA, A et al.Applied surface science. 2005, Vol 244, Num 1-4, pp 504-510, issn 0169-4332, 7 p.Conference Paper

Conductive and crack-free AlN/GaN:Si distributed bragg reflectors grown on 6H-SiC(0001)IVE, T; BRANDT, O; PLOOG, K. H et al.Journal of crystal growth. 2005, Vol 278, Num 1-4, pp 355-360, issn 0022-0248, 6 p.Conference Paper