Pascal and Francis Bibliographic Databases

Help

Search results

Your search

cc.\*:("8165L")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 276

  • Page / 12
Export

Selection :

  • and

Development of nitride-layer of AISI 304 austenitic stainless steel during high-temperature ammonia gas-nitridingPENG, D. Q; KIM, T. H; CHUNG, J. H et al.Applied surface science. 2010, Vol 256, Num 24, pp 7522-7529, issn 0169-4332, 8 p.Article

Influence of Si/SiO2 interface properties on electrical performance and breakdown characteristics of ultrathin stacked oxide/nitride dielectric filmsLEE, Yi-Mu; WU, Yider.Applied surface science. 2008, Vol 254, Num 15, pp 4591-4598, issn 0169-4332, 8 p.Article

XPS study of the formation of ultrathin GaN film on GaAs(1 0 0)BIDEUX, L; MONIER, G; MATOLIN, V et al.Applied surface science. 2008, Vol 254, Num 13, pp 4150-4153, issn 0169-4332, 4 p.Article

Structural properties of GaAs surfaces nitrided in hydrazine-sulfide solutionsBERKOVITS, V. L; MASSON, L; MAKARENKO, I. V et al.Applied surface science. 2008, Vol 254, Num 24, pp 8023-8028, issn 0169-4332, 6 p.Conference Paper

Nitridation of the SiO2/4H-SiC interface studied by surface-enhanced Raman spectroscopyCHOI, S. H; WANG, D; WILLIAMS, J. R et al.Applied surface science. 2007, Vol 253, Num 12, pp 5411-5414, issn 0169-4332, 4 p.Article

Effects of the high-temperature plasma immersion ion-implantation treatment on corrosion behavior of Ti-6Al-4VDA SILVA, Leide Lili G; UEDA, Mario; MARGARETH DA SILVA, Maria et al.IEEE transactions on plasma science. 2006, Vol 34, Num 4, pp 1141-1147, issn 0093-3813, 7 p., 1Article

Study on properties of M50 steel implanted with nitrogen by plasma-based ion implantation at elevated temperaturesXINXIN MA; SHUYAN XU; GUANGZE TANG et al.IEEE transactions on plasma science. 2006, Vol 34, Num 4, pp 1204-1208, issn 0093-3813, 5 p., 1Article

Effect of continuous and cyclic Rf plasma processing time on titanium surfaceEL-HOSSARY, F. M; NEGM, N. Z; KHALIL, S. M et al.Applied surface science. 2005, Vol 239, Num 2, pp 142-153, issn 0169-4332, 12 p.Article

Evaluation of the diffusion coefficient of nitrogen in Fe4N1-x nitride layers during microwave post-discharge nitridingCAMPOS, I; TORRES, R; BAUTISTA, O et al.Applied surface science. 2005, Vol 249, Num 1-4, pp 54-59, issn 0169-4332, 6 p.Article

Spectroscopic optimization of abnormal glow conditions for plasma ion nitridingQAYYUM, A; AHMAD, R; WAHEED, A et al.EPJ. Applied physics (Print). 2005, Vol 32, Num 1, pp 45-52, issn 1286-0042, 8 p.Article

Corrosion and cell adhesion behavior of TiN-coated and ion-nitrided titanium for dental applicationsHUANG, Her-Hsiung; HSU, Chu-Hui; PAN, Szu-Jung et al.Applied surface science. 2005, Vol 244, Num 1-4, pp 252-256, issn 0169-4332, 5 p.Conference Paper

Effect of sapphire substrate nitridation on the elimination of rotation domains in ZnO epitaxial filmsMINJU YING; XIAOLONG DU; ZENGXIA MEI et al.Journal of physics. D, Applied physics (Print). 2004, Vol 37, Num 21, pp 3058-3062, issn 0022-3727, 5 p.Article

X-ray photoelectron spectroscopy investigation of the carburization of 310 stainless steelTABET, N; ALLAM, I; YIN, R. C et al.Applied surface science. 2003, Vol 220, Num 1-4, pp 259-272, issn 0169-4332, 14 p.Article

The effect of diffusion treatments in a glow-discharge plasma in Ar + O2 atmosphere on friction and wear of Ti-6Al-4V alloyDUDEK, M; FOUVRY, S; WENDLER, B et al.Vacuum. 2003, Vol 70, Num 2-3, pp 187-191, issn 0042-207X, 5 p.Conference Paper

Time evolution of Cr and N on AISI 304 steel surface during pulsed plasma ion nitridingFEUGEAS, J. N; GOMEZ, B. J; SANCHEZ, G et al.Thin solid films. 2003, Vol 424, Num 1, pp 130-138, issn 0040-6090, 9 p.Conference Paper

EXAFS investigation of laser nitridation and laser carburization of siliconCARPENE, E; FLANK, A. M; TRAVERSE, A et al.Journal of physics. D, Applied physics (Print). 2002, Vol 35, Num 12, pp 1428-1432, issn 0022-3727Article

Nitrided galloaluminophosphates 'AlGaPON': Influence of the nitridation time on the nature and the stability of surface nitrogenous speciesDELSARTE, Stéphanie; CENTENO, Miguel Angel; GRANGE, Paul et al.Journal of non-crystalline solids. 2002, Vol 297, Num 2-3, pp 189-204, issn 0022-3093Article

Post boronizing ion implantation of C45 steelYAN, P. X; WEI, Z. Q; WEN, X. L et al.Applied surface science. 2002, Vol 195, Num 1-4, pp 74-79, issn 0169-4332Article

Surface treatment with linearly polarized laser beam at oblique incidenceGUTU, I; PETRE, C; MIHAILESCU, I. N et al.Optics and laser technology. 2002, Vol 34, Num 5, pp 381-388, issn 0030-3992Article

Modification of diamond single crystals by chromium ion implantation with sacrificial layersSTOCK, H.-R; KOHLSCHEEN, J; MAYR, P et al.Analytical and bioanalytical chemistry. 2002, Vol 374, Num 7-8, pp 1335-1337, 3 p.Article

Increase of Si solution rate into Al matrix by repeated irradiation of intense pulsed ion beamAKAMATSU, H; TANAKA, H; YAMANISHI, T et al.Vacuum. 2002, Vol 65, Num 3-4, pp 563-569, issn 0042-207XConference Paper

Atomic-order nitridation of SiO2 by nitrogen plasmaSEINO, Takuya; MATSUURA, Takashi; MUROTA, Junichi et al.Surface and interface analysis. 2002, Vol 34, Num 1, pp 451-455, issn 0142-2421Conference Paper

Thermal nitridation of ultrathin SiO2 on Si by NH3JINTSUGAWA, Osamu; SAKURABA, Masao; MATSUURA, Takashi et al.Surface and interface analysis. 2002, Vol 34, Num 1, pp 456-459, issn 0142-2421Conference Paper

Nitridation mechanism of sapphire and its influence on the growth and properties of GaN overlayersKIM, Ki-Sung; KIM, Kyoung-Bo; KIM, Seon-Hyo et al.Journal of crystal growth. 2001, Vol 233, Num 1-2, pp 167-176, issn 0022-0248Article

The influence of glow discharge nitriding, oxynitriding and carbonitriding on surface modification of Ti-1Al-1Mn titanium alloySOBIECKI, J. R; WIERZCHON, T; RUDNICKI, J et al.Vacuum. 2001, Vol 64, Num 1, pp 41-46, issn 0042-207XArticle

  • Page / 12